CA967683A - Voltage transient protection of field effect transistors - Google Patents

Voltage transient protection of field effect transistors

Info

Publication number: CA967683A
Authority: CA; Canada
Prior art keywords: field effect; effect transistors; voltage transient; transient protection; protection
Prior art date: 1971-07-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA147,160A

Other languages

English (en)

Other versions

CA147160S (en

Inventor

Seiichi Watanabe

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sony Corp

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1971-07-17

Filing date

1972-07-14

Publication date

1975-05-13

1972-07-14 Application filed by Sony Corp filed Critical Sony Corp

1975-05-13 Application granted granted Critical

1975-05-13 Publication of CA967683A publication Critical patent/CA967683A/en

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass

CA147,160A 1971-07-17 1972-07-14 Voltage transient protection of field effect transistors Expired CA967683A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP6328171		1971-07-17

Publications (1)

Publication Number	Publication Date
CA967683A true CA967683A (en)	1975-05-13

Family

ID=13224766

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA147,160A Expired CA967683A (en)	1971-07-17	1972-07-14	Voltage transient protection of field effect transistors

Country Status (7)

Country	Link
US (1)	US3806773A (it)
CA (1)	CA967683A (it)
DE (1)	DE2234973B2 (it)
FR (1)	FR2146323B1 (it)
GB (1)	GB1400541A (it)
IT (1)	IT962927B (it)
NL (1)	NL7209822A (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5024084A (it) *	1973-07-05	1975-03-14
US3879640A (en) *	1974-02-11	1975-04-22	Rca Corp	Protective diode network for MOS devices
GB1569897A (en) *	1975-12-31	1980-06-25	Ibm	Field effect transistor
US4100561A (en) *	1976-05-24	1978-07-11	Rca Corp.	Protective circuit for MOS devices
JPS55136726A (en) *	1979-04-11	1980-10-24	Nec Corp	High voltage mos inverter and its drive method
JPS57141962A (en) *	1981-02-27	1982-09-02	Hitachi Ltd	Semiconductor integrated circuit device
US4609931A (en) *	1981-07-17	1986-09-02	Tokyo Shibaura Denki Kabushiki Kaisha	Input protection MOS semiconductor device with zener breakdown mechanism
JPS5825264A (ja) *	1981-08-07	1983-02-15	Hitachi Ltd	絶縁ゲート型半導体装置
JPS5836169A (ja) *	1981-08-28	1983-03-03	Fuji Electric Co Ltd	サイリスタ監視装置
IT1186338B (it) *	1985-10-29	1987-11-26	Sgs Microelettronica Spa	Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
US4890143A (en) *	1988-07-28	1989-12-26	General Electric Company	Protective clamp for MOS gated devices
US5212398A (en) *	1989-11-30	1993-05-18	Kabushiki Kaisha Toshiba	BiMOS structure having a protective diode
EP0646964B1 (en) *	1993-09-30	1999-12-15	Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno	Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof
DE69328932T2 (de) *	1993-12-13	2000-12-14	Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania	Integrierte aktive Klammerungsstruktur für den Schutz von Leistungshalbleiterbauelementen gegen Überspannungen
US6825504B2 (en) *	1999-05-03	2004-11-30	Hitachi, Ltd.	Semiconductor integrated circuit device and method of manufacturing the same
US6949802B2 (en) *	2003-11-20	2005-09-27	Taiwan Semiconductor Manufacturing Co., Ltd.	ESD protection structure
JP2006294719A (ja) *	2005-04-07	2006-10-26	Oki Electric Ind Co Ltd	半導体装置
US8476709B2 (en)	2006-08-24	2013-07-02	Infineon Technologies Ag	ESD protection device and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3469155A (en) *	1966-09-23	1969-09-23	Westinghouse Electric Corp	Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3470390A (en) *	1968-02-02	1969-09-30	Westinghouse Electric Corp	Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3512058A (en) *	1968-04-10	1970-05-12	Rca Corp	High voltage transient protection for an insulated gate field effect transistor
NL162792C (nl) *	1969-03-01	1980-06-16	Philips Nv	Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.

1972
- 1972-07-07 US US00269765A patent/US3806773A/en not_active Expired - Lifetime
- 1972-07-12 GB GB3262572A patent/GB1400541A/en not_active Expired
- 1972-07-14 CA CA147,160A patent/CA967683A/en not_active Expired
- 1972-07-14 NL NL7209822A patent/NL7209822A/xx not_active Application Discontinuation
- 1972-07-17 FR FR7225759A patent/FR2146323B1/fr not_active Expired
- 1972-07-17 DE DE2234973A patent/DE2234973B2/de not_active Ceased
- 1972-07-17 IT IT2709372A patent/IT962927B/it active

Also Published As

Publication number	Publication date
FR2146323B1 (it)	1975-03-07
US3806773A (en)	1974-04-23
IT962927B (it)	1973-12-31
FR2146323A1 (it)	1973-03-02
DE2234973A1 (de)	1973-02-01
DE2234973B2 (de)	1974-10-03
GB1400541A (en)	1975-07-16
NL7209822A (it)	1973-01-19

Publication	Publication Date	Title
CA931279A (en)	1973-07-31	Input transient protection for insulated gate field effect transistors
CA959171A (en)	1974-12-10	Input transient protection for complementary insulated gate field effect transistor integrated circuit
CA965188A (en)	1975-03-25	Field effect transistor
CA967683A (en)	1975-05-13	Voltage transient protection of field effect transistors
CA959366A (en)	1974-12-17	Compositions of matter
CA942432A (en)	1974-02-19	Combined bipolar and field effect transistors
CA1012259A (en)	1977-06-14	Reduction of second breakdown in planar transistors
CA990400A (en)	1976-06-01	High voltage protection circuitry
CA1012658A (en)	1977-06-21	Manufacture of an insulated gate field effect transistor
AU470939B2 (en)	1976-04-01	Protection of materials
CA1033468A (en)	1978-06-20	Combination of a bipolar transistor and a mos field effect transistor
CA874129A (en)	1971-06-22	High voltage transient protection for an insulated gate field effect transistor
AU468253B2 (en)	1976-01-08	Improved protection of transformers
CA925947A (en)	1973-05-08	Transient voltage protection circuit
AU460390B2 (en)	1975-04-24	Compositions of matter
CA868640A (en)	1971-04-13	Field effect transistor having passivated gate insulator
AU284283B2 (en)	1965-06-24	Composition of matter
AU293255B2 (en)	1965-05-13	Composition of matter
CA871393A (en)	1971-05-18	Field effect transistors
CA886239A (en)	1971-11-16	Field effect transistor
CA887875A (en)	1971-12-07	Field effect transistor
CA885691A (en)	1971-11-09	Field effect transistor
CA878172A (en)	1971-08-10	Field effect transistor
CA662966A (en)	1963-05-14	Compositions of matter containing polyepoxides and polyaminodiphenylsulfones
AU279557B2 (en)	1964-12-03	Anthelmintic compositions and compounds