CA973977A - Schottky barrier diode and method of making the same - Google Patents

Schottky barrier diode and method of making the same

Info

Publication number
CA973977A
CA973977A CA136,017A CA136017A CA973977A CA 973977 A CA973977 A CA 973977A CA 136017 A CA136017 A CA 136017A CA 973977 A CA973977 A CA 973977A
Authority
CA
Canada
Prior art keywords
making
same
schottky barrier
barrier diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA136,017A
Other languages
English (en)
Other versions
CA136017S (en
Inventor
Arjun N. Saxena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA973977A publication Critical patent/CA973977A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
CA136,017A 1971-04-07 1972-03-01 Schottky barrier diode and method of making the same Expired CA973977A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13195571A 1971-04-07 1971-04-07

Publications (1)

Publication Number Publication Date
CA973977A true CA973977A (en) 1975-09-02

Family

ID=22451764

Family Applications (1)

Application Number Title Priority Date Filing Date
CA136,017A Expired CA973977A (en) 1971-04-07 1972-03-01 Schottky barrier diode and method of making the same

Country Status (8)

Country Link
US (1) US3700979A (it)
JP (1) JPS5110068B1 (it)
BE (1) BE781645A (it)
CA (1) CA973977A (it)
DE (1) DE2216032B2 (it)
GB (1) GB1353849A (it)
IT (1) IT950985B (it)
NL (1) NL7204610A (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3968272A (en) * 1974-01-25 1976-07-06 Microwave Associates, Inc. Zero-bias Schottky barrier detector diodes
US4689648A (en) * 1983-05-27 1987-08-25 International Business Machines Corporation Magnetically sensitive metal semiconductor devices
EP2204074B1 (en) * 2007-09-10 2019-11-06 University of Florida Research Foundation, Inc. Nanotube enabled, gate-voltage controlled light emitting diodes
US20130001734A1 (en) * 2011-07-01 2013-01-03 Mediatek Inc. Schottky diode structure
WO2014071343A1 (en) 2012-11-05 2014-05-08 University Of Florida Research Foundation, Inc. Brightness compensation in a display
CN104617159A (zh) * 2015-01-17 2015-05-13 王宏兴 一种金刚石肖特基二极管及其制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3349297A (en) * 1964-06-23 1967-10-24 Bell Telephone Labor Inc Surface barrier semiconductor translating device
US3616380A (en) * 1968-11-22 1971-10-26 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
US3599323A (en) * 1968-11-25 1971-08-17 Sprague Electric Co Hot carrier diode having low turn-on voltage
US3649890A (en) * 1969-12-31 1972-03-14 Microwave Ass High burnout resistance schottky barrier diode
US3604986A (en) * 1970-03-17 1971-09-14 Bell Telephone Labor Inc High frequency transistors with shallow emitters

Also Published As

Publication number Publication date
JPS5110068B1 (it) 1976-04-01
BE781645A (fr) 1973-01-31
DE2216032B2 (de) 1974-12-19
NL7204610A (it) 1972-10-10
DE2216032A1 (de) 1972-10-12
US3700979A (en) 1972-10-24
GB1353849A (en) 1974-05-22
IT950985B (it) 1973-06-20

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