CA999977A - Low forward voltage drop thyristor - Google Patents
Low forward voltage drop thyristorInfo
- Publication number
- CA999977A CA999977A CA195,552A CA195552A CA999977A CA 999977 A CA999977 A CA 999977A CA 195552 A CA195552 A CA 195552A CA 999977 A CA999977 A CA 999977A
- Authority
- CA
- Canada
- Prior art keywords
- thyristor
- voltage drop
- forward voltage
- low forward
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35462073A | 1973-04-25 | 1973-04-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA999977A true CA999977A (en) | 1976-11-16 |
Family
ID=23394184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA195,552A Expired CA999977A (en) | 1973-04-25 | 1974-03-20 | Low forward voltage drop thyristor |
Country Status (2)
| Country | Link |
|---|---|
| BE (1) | BE814083A (fr) |
| CA (1) | CA999977A (fr) |
-
1974
- 1974-03-20 CA CA195,552A patent/CA999977A/en not_active Expired
- 1974-04-24 BE BE1005903A patent/BE814083A/fr not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| BE814083A (fr) | 1974-10-24 |
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