CA999979A - Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing - Google Patents

Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing

Info

Publication number: CA999979A
Authority: CA; Canada
Prior art keywords: tailoring; annealing; irradiation; diode; voltage drop
Prior art date: 1973-03-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA193,427A

Other languages

English (en)

Other versions

CA193427S (en

Inventor

Krishan S. Tarneja

John Bartko

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Westinghouse Electric Corp

Original Assignee

Westinghouse Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-03-09

Filing date

1974-02-25

Publication date

1976-11-16

1974-02-25 Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp

1976-11-16 Application granted granted Critical

1976-11-16 Publication of CA999979A publication Critical patent/CA999979A/en

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation

CA193,427A 1973-03-09 1974-02-25 Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing Expired CA999979A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US339669A US3888701A (en)	1973-03-09	1973-03-09	Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing

Publications (1)

Publication Number	Publication Date
CA999979A true CA999979A (en)	1976-11-16

Family

ID=23330085

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA193,427A Expired CA999979A (en)	1973-03-09	1974-02-25	Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing

Country Status (3)

Country	Link
US (1)	US3888701A (2)
JP (1)	JPS5131190B2 (2)
CA (1)	CA999979A (2)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4053925A (en) *	1975-08-07	1977-10-11	Ibm Corporation	Method and structure for controllng carrier lifetime in semiconductor devices
JPS52129577U (2) *	1976-03-29	1977-10-01
US4076555A (en) *	1976-05-17	1978-02-28	Westinghouse Electric Corporation	Irradiation for rapid turn-off reverse blocking diode thyristor
US4137099A (en) *	1977-07-11	1979-01-30	General Electric Company	Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments
US4134778A (en) *	1977-09-02	1979-01-16	General Electric Company	Selective irradiation of thyristors
DE2755418A1 (de) *	1977-12-13	1979-06-21	Bosch Gmbh Robert	Verfahren zur herstellung eines halbleiter-bauelements
US4184896A (en) *	1978-06-06	1980-01-22	The United States Of America As Represented By The Secretary Of The Air Force	Surface barrier tailoring of semiconductor devices utilizing scanning electron microscope produced ionizing radiation
US4240844A (en) *	1978-12-22	1980-12-23	Westinghouse Electric Corp.	Reducing the switching time of semiconductor devices by neutron irradiation
US4291329A (en) *	1979-08-31	1981-09-22	Westinghouse Electric Corp.	Thyristor with continuous recombination center shunt across planar emitter-base junction
US4358323A (en) *	1980-04-23	1982-11-09	Rca Corporation	Low cost reduced blooming device and method for making the same
US4329702A (en) *	1980-04-23	1982-05-11	Rca Corporation	Low cost reduced blooming device and method for making the same
DE59003052D1 (de) *	1989-05-18	1993-11-18	Asea Brown Boveri	Halbleiterbauelement.
DE4421529C2 (de) *	1994-06-20	1996-04-18	Semikron Elektronik Gmbh	Schnelle Leistungsdiode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2911533A (en) *	1957-12-24	1959-11-03	Arthur C Damask	Electron irradiation of solids
US3272661A (en) *	1962-07-23	1966-09-13	Hitachi Ltd	Manufacturing method of a semi-conductor device by controlling the recombination velocity
US3533857A (en) *	1967-11-29	1970-10-13	Hughes Aircraft Co	Method of restoring crystals damaged by irradiation
US3532910A (en) *	1968-07-29	1970-10-06	Bell Telephone Labor Inc	Increasing the power output of certain diodes
JPS4837232B1 (2) *	1968-12-04	1973-11-09

1973
- 1973-03-09 US US339669A patent/US3888701A/en not_active Expired - Lifetime
1974
- 1974-02-25 CA CA193,427A patent/CA999979A/en not_active Expired
- 1974-03-08 JP JP49026442A patent/JPS5131190B2/ja not_active Expired

Also Published As

Publication number	Publication date
US3888701A (en)	1975-06-10
JPS5131190B2 (2)	1976-09-04
JPS50111994A (2)	1975-09-03

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