CH190817A - Process for the production of electrical resistors provided with connection contacts with a negative temperature coefficient from a sintered, semiconducting mixture containing excess silicon, and a resistor produced therefrom. - Google Patents
Process for the production of electrical resistors provided with connection contacts with a negative temperature coefficient from a sintered, semiconducting mixture containing excess silicon, and a resistor produced therefrom.Info
- Publication number
- CH190817A CH190817A CH190817DA CH190817A CH 190817 A CH190817 A CH 190817A CH 190817D A CH190817D A CH 190817DA CH 190817 A CH190817 A CH 190817A
- Authority
- CH
- Switzerland
- Prior art keywords
- sintered
- production
- negative temperature
- mixture containing
- electrical resistors
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 7
- 239000000203 mixture Substances 0.000 title claims description 7
- 229910052710 silicon Inorganic materials 0.000 title claims description 7
- 239000010703 silicon Substances 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 241000416162 Astragalus gummifer Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000519 Ferrosilicon Inorganic materials 0.000 description 1
- 229920001615 Tragacanth Polymers 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000414 obstructive effect Effects 0.000 description 1
- 229940116362 tragacanth Drugs 0.000 description 1
- 235000010487 tragacanth Nutrition 0.000 description 1
- 239000000196 tragacanth Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
verfahren zur Herstellung von mit Anschlusskontakten versehenen elektrischen Widerständen mit negativem Temperaturkoeffizienten aus einem gesinterten, halbleitenden, Silizium im Überschuss enthaltenden Gemisch, und darnach hergestellter Widerstand. Es ist nicht leicht, elektrische, aus gesin terten Materialien hergestellte Widerstände mit gut haftenden, keinen unerwünschten Übergangswiderstand gebenden Kontakten zu versehen.
Zu diesem Zweck sind verschie dene Verfahren vorgeschlagen worden, beson ders für elektrische Widerstände mit negati vem Temperaturkoeffizienten, die aus nie drigeren Oxyden des Chroms oder des. Urans hergestellt sind. Dabei hat man darauf hin gewiesen, dass das Zusammensintern von Metall und Kohlenstoff wegen der Bildung des Karbids zu einem ungewünschten Er gebnis führt.
Gegenstand der Erfindung ist nun ein Verfahren zur Herstellung von mit An schlusskontakten versehenen elektrischen Wi derständen mit negativem Temperaturkoeffi zienten aus einem gesinterten halbleitenden Gemisch, das Silizium im Überschuss ent- hält. Dieses Verfahren ist gemäss Erfindung dadurch gekennzeichnet, ,dassi für die Bildung der Kontakte bestimmte Kohlenstoffkörper während der Sinterung des halbleitenden Ge misches damit zu einem Ganzen zusammen gesintert werden.
Die Erfindung ist nachstehend an einem Ausführungsbeispiel näher erläutert.
50g Ferrosilizium mit hohem .Silizium-, gehalt, z. B. <B>98%,</B> wird in Pulverform ge bracht, gesiebt und darauf mit 10 g Ton und 50 mg Tragant, gleichfalls in Pulverform, mit Hinzufügung von 7 cm3 Wasser ge mischt, bis eine homogene Paste erzielt wor den ist, die in Form von Stäbchen 1 gepresst wird;
bei dieser Behandlung werden gleich zeitig die Graphitblöckchen 2 angepresst. Darauf werden die so mit G.raphitkontakten 2. versehenen Stäbchen 1 während einiger Stunden in Luft getrocknet und darauf wäh- send annähernd 60 Minuten auf einer '11com- peratur von<B>1300,'</B> C in einer reduzierenden Gasatmosphäre erhitzt, wobei die für die Bildung der Kontakte bestimmten Graphit körper während ,der Sinterung des halbleiten den Gemisches damit zu einem Ganzen zu sammen gesintert werden.
Die Graphitkon- takte sind dann fest mit dem siliziumhalti- gen Widerstandsmaterial verbunden und wei sen keinen hinderlichen Übergangswiderstand auf. Sie können weiter mit z. B. aus Nickel bestehenden Stäbchen 3 für die Stromzufüh rung versehen werden.
Zur Erläuterung diene noch, dass. mit einem Überschuss an Silizium im Wider standsmaterial erreicht wird, dass der Wider standswert dieser z. B. für die Anwendung als Anlasswiderstand für Motoren sehr ge eigneten Widerstände bei Zimmertemperatur gross, bei einer Betriebstemperatur z. B. von <B>700'</B> C aber sehr klein ist, sodass ein nega- tiver Temperaturkoeffizient von hohem Wert entsteht.
Method for the production of electrical resistors provided with connection contacts with a negative temperature coefficient from a sintered, semiconducting mixture containing excess silicon, and a resistor produced therefrom. It is not easy to provide electrical resistors made from sintered materials with contacts that adhere well and that do not give undesired contact resistance.
For this purpose, various methods have been proposed, especially for electrical resistors with negative temperature coefficients, which are made from never drigeren oxides of chromium or uranium. It has been pointed out that sintering the metal and carbon together leads to an undesirable result because of the formation of the carbide.
The subject of the invention is a method for the production of electrical resistors provided with connection contacts with negative temperature coefficients from a sintered semiconducting mixture which contains silicon in excess. According to the invention, this method is characterized in that carbon bodies intended for the formation of the contacts are sintered together to form a whole during the sintering of the semiconducting mixture.
The invention is explained in more detail below using an exemplary embodiment.
50g ferrosilicon with a high silicon content, e.g. B. 98% is brought into powder form, sieved and then mixed with 10 g clay and 50 mg tragacanth, also in powder form, with the addition of 7 cm3 water until a homogeneous paste is obtained which is pressed in the form of rods 1;
During this treatment, the graphite blocks 2 are pressed at the same time. The rods 1 thus provided with graphite contacts 2. are then dried in air for a few hours and then heated for approximately 60 minutes at a temperature of 1300 ° C. in a reducing gas atmosphere , the graphite body intended for the formation of the contacts during the sintering of the semiconducting the mixture thus being sintered to form a whole.
The graphite contacts are then firmly connected to the silicon-containing resistance material and do not have any obstructive contact resistance. You can continue with z. B. made of nickel rods 3 for the Stromzufüh tion are provided.
To explain it still serve that. With an excess of silicon in the resistance material is achieved that the resistance value of this z. B. for use as a starting resistor for motors very ge suitable resistances at room temperature large, at an operating temperature z. B. of <B> 700 '</B> C but is very small, so that a negative temperature coefficient of high value is created.
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE190817X | 1935-08-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH190817A true CH190817A (en) | 1937-05-15 |
Family
ID=5725655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH190817D CH190817A (en) | 1935-08-17 | 1936-08-15 | Process for the production of electrical resistors provided with connection contacts with a negative temperature coefficient from a sintered, semiconducting mixture containing excess silicon, and a resistor produced therefrom. |
Country Status (1)
| Country | Link |
|---|---|
| CH (1) | CH190817A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE890385C (en) * | 1939-02-22 | 1953-09-17 | Conradty Fa C | Carbon lamella for collectors of electrical machines |
-
1936
- 1936-08-15 CH CH190817D patent/CH190817A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE890385C (en) * | 1939-02-22 | 1953-09-17 | Conradty Fa C | Carbon lamella for collectors of electrical machines |
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