CH256676A - Verfahren zur Herstellung eines Trockengleichrichterelementes. - Google Patents

Verfahren zur Herstellung eines Trockengleichrichterelementes.

Info

Publication number
CH256676A
CH256676A CH256676DA CH256676A CH 256676 A CH256676 A CH 256676A CH 256676D A CH256676D A CH 256676DA CH 256676 A CH256676 A CH 256676A
Authority
CH
Switzerland
Prior art keywords
production
rectifier element
dry rectifier
dry
rectifier
Prior art date
Application number
Other languages
English (en)
Inventor
Ag Standard Telephon Und Radio
Original Assignee
Standard Telephon & Radio Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephon & Radio Ag filed Critical Standard Telephon & Radio Ag
Publication of CH256676A publication Critical patent/CH256676A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01Manufacture or treatment
    • H10D48/04Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/0431Application of the selenium or tellurium to the foundation plate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01Manufacture or treatment
    • H10D48/04Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2923Materials being conductive materials, e.g. metallic silicides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
CH256676D 1943-10-07 1946-01-14 Verfahren zur Herstellung eines Trockengleichrichterelementes. CH256676A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US256676XA 1943-10-07 1943-10-07

Publications (1)

Publication Number Publication Date
CH256676A true CH256676A (de) 1948-08-31

Family

ID=21827389

Family Applications (1)

Application Number Title Priority Date Filing Date
CH256676D CH256676A (de) 1943-10-07 1946-01-14 Verfahren zur Herstellung eines Trockengleichrichterelementes.

Country Status (4)

Country Link
BE (1) BE473666A (de)
CH (1) CH256676A (de)
FR (1) FR938179A (de)
GB (1) GB582385A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE961467C (de) * 1952-04-26 1957-04-04 Standard Elektrik Ag Verfahren zur Herstellung von Selengleichrichtern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE961467C (de) * 1952-04-26 1957-04-04 Standard Elektrik Ag Verfahren zur Herstellung von Selengleichrichtern

Also Published As

Publication number Publication date
GB582385A (en) 1946-11-14
BE473666A (de) 1900-01-01
FR938179A (fr) 1948-09-07

Similar Documents

Publication Publication Date Title
CH236594A (de) Verfahren zur Herstellung eines Kunstharzes.
CH240122A (de) Verfahren zur Herstellung eines Stilbenfarbstoffes.
CH263778A (de) Verfahren zur Herstellung eines Punktkontakt-Gleichrichters.
CH240578A (de) Verfahren zur Herstellung eines Aminoarylcarbinols.
CH265647A (de) Verfahren zur Herstellung des halbleitenden, vorwiegend aus Silizium bestehenden Kristalles eines Kristallgleichrichters.
CH252020A (de) Verfahren zur Herstellung eines p-Amino-benzolsulfonamido-pyrimidins.
CH263779A (de) Verfahren zur Herstellung eines Kristall-Gleichrichters.
CH237394A (de) Verfahren zur Herstellung eines Kondensationsproduktes.
CH248479A (de) Verfahren zur Herstellung von Anilin-N-d-ribosid.
CH231697A (de) Verfahren zur Herstellung eines Textilhilfsmittels.
CH256676A (de) Verfahren zur Herstellung eines Trockengleichrichterelementes.
CH233683A (de) Verfahren zur Herstellung eines Dioxanderivates.
CH238337A (de) Verfahren zur Herstellung eines neuen Pigmentfarbstoffes.
CH257868A (de) Verfahren zur Herstellung eines Selenelementes.
CH236708A (de) Verfahren zur Herstellung eines substituierten Thiazolcarbonsäureamides.
CH236696A (de) Verfahren zur Herstellung eines Schwefelfarbstoffes.
CH236695A (de) Verfahren zur Herstellung eines Schwefelfarbstoffes.
CH236227A (de) Verfahren zur Herstellung eines Kondensationsproduktes.
CH241208A (de) Verfahren zur Herstellung eines Küpenfarbstoffes.
CH248477A (de) Verfahren zur Herstellung eines Sulfanilamidderivates.
AT169466B (de) Verfahren zur Herstellung von Geweben
CH238462A (de) Verfahren zur Herstellung eines neuen Azofarbstoffes.
CH237411A (de) Verfahren zur Herstellung von lichtempfindlichen Schichten.
CH242782A (de) Verfahren zur Herstellung eines neuen Amidderivats.
CH296669A (de) Verfahren zur Herstellung eines sauren Wollfarbstoffes.