CH337583A - Rectifying element - Google Patents

Rectifying element

Info

Publication number
CH337583A
CH337583A CH337583DA CH337583A CH 337583 A CH337583 A CH 337583A CH 337583D A CH337583D A CH 337583DA CH 337583 A CH337583 A CH 337583A
Authority
CH
Switzerland
Prior art keywords
rectifying element
rectifying
Prior art date
Application number
Other languages
French (fr)
Inventor
Leondus Pearson Gerald
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH337583A publication Critical patent/CH337583A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/50PIN diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
CH337583D 1954-03-05 1955-03-04 Rectifying element CH337583A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41427554A 1954-03-05 1954-03-05
US491908A US2811682A (en) 1954-03-05 1955-03-03 Silicon power rectifier

Publications (1)

Publication Number Publication Date
CH337583A true CH337583A (en) 1959-04-15

Family

ID=27022485

Family Applications (1)

Application Number Title Priority Date Filing Date
CH337583D CH337583A (en) 1954-03-05 1955-03-04 Rectifying element

Country Status (7)

Country Link
US (1) US2811682A (en)
BE (1) BE536150A (en)
CH (1) CH337583A (en)
DE (1) DE1033786B (en)
FR (1) FR1115845A (en)
GB (1) GB782664A (en)
NL (2) NL193595A (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL107648C (en) * 1956-05-15
BE557842A (en) * 1956-06-01
NL224227A (en) * 1957-01-29
FR1192082A (en) * 1957-03-20 1959-10-23 Bosch Gmbh Robert Power semiconductor
US3051878A (en) * 1957-05-02 1962-08-28 Sarkes Tarzian Semiconductor devices and method of manufacturing them
US2962394A (en) * 1957-06-20 1960-11-29 Motorola Inc Process for plating a silicon base semiconductive unit with nickel
US2943268A (en) * 1957-07-30 1960-06-28 Texaco Inc Automatic gain control amplifier circuit
FR1214352A (en) * 1957-12-23 1960-04-08 Hughes Aircraft Co Semiconductor device and method for making it
US3007092A (en) * 1957-12-23 1961-10-31 Hughes Aircraft Co Semiconductor devices
DE1104075B (en) * 1958-05-14 1961-04-06 Telefunken Gmbh Semiconductor rectifiers, in particular high-frequency rectifiers, with an n np or p pn sequence of the semiconductor zones in the semiconductor body and method for its production
NL239515A (en) * 1958-06-18
US3021595A (en) * 1958-07-02 1962-02-20 Texas Instruments Inc Ohmic contacts for silicon conductor devices and method for making
US2937963A (en) * 1958-07-14 1960-05-24 Int Rectifier Corp Temperature compensating zener diode construction
US3116442A (en) * 1959-07-27 1963-12-31 Link Belt Co Silicon rectifier assembly comprising a heat conductive mounting base
DE1208412B (en) * 1959-11-13 1966-01-05 Siemens Ag Electrical semiconductor component with at least one pn junction emerging on the surface of the semiconductor body and method for producing such a component

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL84061C (en) * 1948-06-26
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
BE506280A (en) * 1950-10-10
BE525428A (en) * 1952-12-30

Also Published As

Publication number Publication date
US2811682A (en) 1957-10-29
GB782664A (en) 1957-09-11
DE1033786B (en) 1958-07-10
FR1115845A (en) 1956-04-30
NL193595A (en)
BE536150A (en)
NL99247C (en)

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