Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D99/00—Subject matter not provided for in other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F99/00—Subject matter not provided for in other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
  • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
  • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
  • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
  • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
  • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
  • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Applications Claiming Priority (2)

Publications (1)

Family

ID=26247883

Family Applications (2)

Family Applications Before (1)

Country Status (7)

Families Citing this family (11)

Family Cites Families (8)

• 0
  • BE BE536988D patent/BE536988A/fr unknown
  • NL NL197918D patent/NL197918A/xx unknown
  • NL NL196136D patent/NL196136A/xx unknown
  • US US25952D patent/USRE25952E/en not_active Expired
  • BE BE539649D patent/BE539649A/nl unknown
  • NL NL94819D patent/NL94819C/xx active
• 1954
  • 1954-04-01 US US420401A patent/US2843511A/en not_active Expired - Lifetime
  • 1954-04-14 GB GB10949/54A patent/GB766671A/en not_active Expired
• 1955
  • 1955-03-04 GB GB6499/55A patent/GB804000A/en not_active Expired
  • 1955-03-24 CH CH1775855A patent/CH363416A/de unknown
  • 1955-03-28 AU AU7882/55A patent/AU204456B1/en not_active Expired
  • 1955-04-02 DE DER16395A patent/DE967322C/de not_active Expired
  • 1955-04-09 DE DEI10075A patent/DE1047944B/de active Pending
  • 1955-04-14 CH CH356209D patent/CH356209A/de unknown

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