CH362749A - Verfahren zur Herstellung von p-n-p-n-Halbleiterkörpern, insbesondere für Kippdioden - Google Patents

Verfahren zur Herstellung von p-n-p-n-Halbleiterkörpern, insbesondere für Kippdioden

Info

Publication number
CH362749A
CH362749A CH5609358A CH5609358A CH362749A CH 362749 A CH362749 A CH 362749A CH 5609358 A CH5609358 A CH 5609358A CH 5609358 A CH5609358 A CH 5609358A CH 362749 A CH362749 A CH 362749A
Authority
CH
Switzerland
Prior art keywords
production
semiconductor bodies
breakover diodes
breakover
diodes
Prior art date
Application number
CH5609358A
Other languages
English (en)
Inventor
Herbert Dr Goetzeler
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH362749A publication Critical patent/CH362749A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
CH5609358A 1957-02-26 1958-02-19 Verfahren zur Herstellung von p-n-p-n-Halbleiterkörpern, insbesondere für Kippdioden CH362749A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES52496A DE1117220B (de) 1957-02-26 1957-02-26 Verfahren zur Herstellung von pnpn-Transistoren

Publications (1)

Publication Number Publication Date
CH362749A true CH362749A (de) 1962-06-30

Family

ID=7488765

Family Applications (1)

Application Number Title Priority Date Filing Date
CH5609358A CH362749A (de) 1957-02-26 1958-02-19 Verfahren zur Herstellung von p-n-p-n-Halbleiterkörpern, insbesondere für Kippdioden

Country Status (4)

Country Link
CH (1) CH362749A (de)
DE (1) DE1117220B (de)
FR (1) FR1191993A (de)
NL (2) NL112062C (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL272752A (de) * 1960-12-20

Also Published As

Publication number Publication date
NL112062C (de)
FR1191993A (fr) 1959-10-22
DE1117220B (de) 1961-11-16
NL225050A (de)

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