CH366903A - Kristalldiode, insbesondere Siliziumdiode mit scharf definierter Durchbruchsspannung in Sperrichtung - Google Patents

Kristalldiode, insbesondere Siliziumdiode mit scharf definierter Durchbruchsspannung in Sperrichtung

Info

Publication number
CH366903A
CH366903A CH5422157A CH5422157A CH366903A CH 366903 A CH366903 A CH 366903A CH 5422157 A CH5422157 A CH 5422157A CH 5422157 A CH5422157 A CH 5422157A CH 366903 A CH366903 A CH 366903A
Authority
CH
Switzerland
Prior art keywords
diode
reverse direction
breakdown voltage
sharply defined
especially silicon
Prior art date
Application number
CH5422157A
Other languages
German (de)
English (en)
Inventor
Arthur Dr Gaudlitz
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH366903A publication Critical patent/CH366903A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/125Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for rectifiers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/20Breakdown diodes, e.g. avalanche diodes
    • H10D8/25Zener diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/01Manufacture or treatment
    • H10W76/05Providing fillings in containers, e.g. gas filling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40Fillings or auxiliary members in containers, e.g. centering rings

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
CH5422157A 1957-01-04 1957-12-28 Kristalldiode, insbesondere Siliziumdiode mit scharf definierter Durchbruchsspannung in Sperrichtung CH366903A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES51814D DE1033785B (de) 1957-01-04 1957-01-04 Kristalldiode, insbesondere Siliziumdiode, bei welcher die Verzoegerung des Durchbruchs in Sperrichtung durch Photoeffekt aufgehoben ist

Publications (1)

Publication Number Publication Date
CH366903A true CH366903A (de) 1963-01-31

Family

ID=7488429

Family Applications (1)

Application Number Title Priority Date Filing Date
CH5422157A CH366903A (de) 1957-01-04 1957-12-28 Kristalldiode, insbesondere Siliziumdiode mit scharf definierter Durchbruchsspannung in Sperrichtung

Country Status (4)

Country Link
CH (1) CH366903A (fr)
DE (1) DE1033785B (fr)
FR (1) FR1188367A (fr)
GB (1) GB832584A (fr)

Also Published As

Publication number Publication date
FR1188367A (fr) 1959-09-22
DE1033785B (de) 1958-07-10
GB832584A (en) 1960-04-13

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