CH370165A - Method for manufacturing a semiconductor device, in particular a transistor - Google Patents

Method for manufacturing a semiconductor device, in particular a transistor

Info

Publication number
CH370165A
CH370165A CH6825259A CH6825259A CH370165A CH 370165 A CH370165 A CH 370165A CH 6825259 A CH6825259 A CH 6825259A CH 6825259 A CH6825259 A CH 6825259A CH 370165 A CH370165 A CH 370165A
Authority
CH
Switzerland
Prior art keywords
transistor
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH6825259A
Other languages
German (de)
Inventor
Anthony Beale Julian Robert
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH370165A publication Critical patent/CH370165A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
CH6825259A 1958-01-16 1959-01-13 Method for manufacturing a semiconductor device, in particular a transistor CH370165A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1561/58A GB911292A (en) 1958-01-16 1958-01-16 Improvements in and relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
CH370165A true CH370165A (en) 1963-06-30

Family

ID=9724105

Family Applications (1)

Application Number Title Priority Date Filing Date
CH6825259A CH370165A (en) 1958-01-16 1959-01-13 Method for manufacturing a semiconductor device, in particular a transistor

Country Status (7)

Country Link
US (1) US3069297A (en)
BE (1) BE574814A (en)
CH (1) CH370165A (en)
DE (1) DE1090770B (en)
FR (1) FR1225692A (en)
GB (1) GB911292A (en)
NL (2) NL121250C (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264084A (en) * 1959-06-23
US3276925A (en) * 1959-12-12 1966-10-04 Nippon Electric Co Method of producing tunnel diodes by double alloying
NL121714C (en) 1959-12-14
NL287617A (en) * 1962-01-12
US3243325A (en) * 1962-06-09 1966-03-29 Fujitsu Ltd Method of producing a variable-capacitance germanium diode and product produced thereby
GB1074283A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
DE1232269B (en) * 1963-08-23 1967-01-12 Telefunken Patent Diffusion process for manufacturing a semiconductor component with emitter, base and collector zones
DE1215754B (en) * 1964-02-24 1966-05-05 Danfoss As Electronic switch
US3335038A (en) 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
DE1614861C3 (en) * 1967-09-01 1982-03-11 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Process for the manufacture of a junction field effect transistor
US3955270A (en) * 1973-08-31 1976-05-11 Bell Telephone Laboratories, Incorporated Methods for making semiconductor devices
US3905162A (en) * 1974-07-23 1975-09-16 Silicon Material Inc Method of preparing high yield semiconductor wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL91651C (en) * 1953-12-09
BE548647A (en) * 1955-06-28
DE1073111B (en) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Method for producing a flat transistor with a surface layer of increased concentration of impurities at the free points between the electrodes on a single-crystal semiconductor body
NL111788C (en) * 1956-06-18

Also Published As

Publication number Publication date
NL121250C (en)
FR1225692A (en) 1960-07-04
BE574814A (en)
US3069297A (en) 1962-12-18
GB911292A (en) 1962-11-21
DE1090770B (en) 1960-10-13
NL235051A (en)

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