CH378547A - Method for changing the cross section of a rod made of crystalline material, in particular semiconductor material - Google Patents

Method for changing the cross section of a rod made of crystalline material, in particular semiconductor material

Info

Publication number
CH378547A
CH378547A CH534860A CH534860A CH378547A CH 378547 A CH378547 A CH 378547A CH 534860 A CH534860 A CH 534860A CH 534860 A CH534860 A CH 534860A CH 378547 A CH378547 A CH 378547A
Authority
CH
Switzerland
Prior art keywords
changing
cross
section
rod made
particular semiconductor
Prior art date
Application number
CH534860A
Other languages
German (de)
Inventor
Wolfgang Dr Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH378547A publication Critical patent/CH378547A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Manufacture And Refinement Of Metals (AREA)
CH534860A 1959-05-29 1960-05-10 Method for changing the cross section of a rod made of crystalline material, in particular semiconductor material CH378547A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES63193A DE1148525B (en) 1959-05-29 1959-05-29 Method for enlarging the cross-section of the rod during crucible-free zone melting of a rod made of crystalline material, in particular semiconductor material

Publications (1)

Publication Number Publication Date
CH378547A true CH378547A (en) 1964-06-15

Family

ID=7496200

Family Applications (1)

Application Number Title Priority Date Filing Date
CH534860A CH378547A (en) 1959-05-29 1960-05-10 Method for changing the cross section of a rod made of crystalline material, in particular semiconductor material

Country Status (4)

Country Link
CH (1) CH378547A (en)
DE (1) DE1148525B (en)
GB (1) GB908370A (en)
NL (2) NL252060A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL126241C (en) * 1963-01-08
DE1444530B2 (en) * 1962-12-12 1970-10-01 Siemens AG, 1000 Berlin u. 8000 München Method and device for producing rod-shaped, single-crystal semiconductor material
DE1719021B1 (en) * 1963-07-13 1969-09-11 Siemens Ag Method for reducing the cross section of a vertically arranged rod of semiconductor material

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement

Also Published As

Publication number Publication date
NL252060A (en)
DE1148525B (en) 1963-05-16
GB908370A (en) 1962-10-17
NL108958C (en)

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