CH387802A - Verfahren zur Herstellung von Selentrockengleichrichtern - Google Patents

Verfahren zur Herstellung von Selentrockengleichrichtern

Info

Publication number
CH387802A
CH387802A CH374060A CH374060A CH387802A CH 387802 A CH387802 A CH 387802A CH 374060 A CH374060 A CH 374060A CH 374060 A CH374060 A CH 374060A CH 387802 A CH387802 A CH 387802A
Authority
CH
Switzerland
Prior art keywords
production
dry rectifiers
selenium dry
selenium
rectifiers
Prior art date
Application number
CH374060A
Other languages
English (en)
Inventor
Nestler Wolfgang Ing Dr
Schimmer Rigobert
Neise Ludwig
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of CH387802A publication Critical patent/CH387802A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/042—Preparation of foundation plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3236—Materials thereof being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
CH374060A 1959-04-13 1960-04-02 Verfahren zur Herstellung von Selentrockengleichrichtern CH387802A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL32957A DE1118887B (de) 1959-04-13 1959-04-13 Verfahren zur Herstellung von Selentrockengleichrichtern

Publications (1)

Publication Number Publication Date
CH387802A true CH387802A (de) 1965-02-15

Family

ID=7266107

Family Applications (1)

Application Number Title Priority Date Filing Date
CH374060A CH387802A (de) 1959-04-13 1960-04-02 Verfahren zur Herstellung von Selentrockengleichrichtern

Country Status (3)

Country Link
CH (1) CH387802A (de)
DE (1) DE1118887B (de)
GB (1) GB872973A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1276214B (de) * 1965-03-15 1968-08-29 Licentia Gmbh Verfahren zur Herstellung einer Selengleichrichterplatte
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods
US4425194A (en) 1976-06-08 1984-01-10 Monosolar, Inc. Photo-voltaic power generating means and methods
US6778749B2 (en) 2001-03-20 2004-08-17 Corning Incorporated Optimized defects in band-gap waveguides

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE467627A (de) * 1945-05-12
US2568780A (en) * 1947-03-01 1951-09-25 Standard Telephones Cables Ltd Rectifier manufacturing process and products obtained thereby
DE887847C (de) * 1948-10-02 1953-08-27 Siemens Ag Verfahren zur Verbesserung des Sperrwiderstandes an Selengleichrichtern
NL153851B (nl) * 1949-05-30 Lonza Ag Werkwijze voor de bereiding van methacrylzuur uit alfa-hydroxyisoboterzuur.

Also Published As

Publication number Publication date
GB872973A (en) 1961-07-19
DE1118887B (de) 1961-12-07

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