CH392700A - Procédé de fabrication d'un dispositif semi-conducteur - Google Patents

Procédé de fabrication d'un dispositif semi-conducteur

Info

Publication number
CH392700A
CH392700A CH382361A CH382361A CH392700A CH 392700 A CH392700 A CH 392700A CH 382361 A CH382361 A CH 382361A CH 382361 A CH382361 A CH 382361A CH 392700 A CH392700 A CH 392700A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH382361A
Other languages
English (en)
Inventor
John Edward Allegretti
Heinrich Gutsche
William Joseph Mcaleer
Original Assignee
Merck & Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US5357560 external-priority patent/US3172791A/en
Application filed by Merck & Co Inc filed Critical Merck & Co Inc
Publication of CH392700A publication Critical patent/CH392700A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H10D62/184—Base regions of bipolar transistors, e.g. BJTs or IGBTs of lateral BJTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation
CH382361A 1960-03-31 1961-03-30 Procédé de fabrication d'un dispositif semi-conducteur CH392700A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1905460A 1960-03-31 1960-03-31
US5357560 US3172791A (en) 1960-08-24 1960-08-24 Crystallographic orientation of a cylindrical rcd of semiconductor material in a vapor deposition process to obtain a polygonal shaped rod

Publications (1)

Publication Number Publication Date
CH392700A true CH392700A (fr) 1965-05-31

Family

ID=39269925

Family Applications (1)

Application Number Title Priority Date Filing Date
CH382361A CH392700A (fr) 1960-03-31 1961-03-30 Procédé de fabrication d'un dispositif semi-conducteur

Country Status (7)

Country Link
US (1) US3226269A (fr)
BE (1) BE602011A (fr)
CH (1) CH392700A (fr)
FR (1) FR1289687A (fr)
GB (1) GB990161A (fr)
NL (1) NL263037A (fr)
SE (1) SE220535C1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3235779A (en) * 1961-06-27 1966-02-15 Merck & Co Inc Full wave rectifier structure and method of preparing same
DE1211723C2 (de) * 1962-11-27 1966-09-08 Siemens Ag Verfahren zur Herstellung von Halbleiterbauelementen
US3273029A (en) * 1963-08-23 1966-09-13 Hoffman Electronics Corp Method of attaching leads to a semiconductor body and the article formed thereby
US3742192A (en) * 1972-02-02 1973-06-26 J Brzuszek Electrical heating device and method
US4075055A (en) * 1976-04-16 1978-02-21 International Business Machines Corporation Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal
DE3424534A1 (de) * 1984-07-04 1986-01-09 Degussa Ag, 6000 Frankfurt N,n'- und n,n',n'-substituierte silylharnstoffe und verfahren zu deren herstellung
US5892558A (en) * 1997-06-26 1999-04-06 Gl Displays, Inc. Wire electrode structure based on 2 or 3 terminal device employed in a liquid crystal display
CN114347277B (zh) * 2021-11-30 2024-04-19 中国电子科技集团公司第十一研究所 一种InSb晶片制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2703296A (en) * 1950-06-20 1955-03-01 Bell Telephone Labor Inc Method of producing a semiconductor element
US2841860A (en) * 1952-08-08 1958-07-08 Sylvania Electric Prod Semiconductor devices and methods
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2854363A (en) * 1953-04-02 1958-09-30 Int Standard Electric Corp Method of producing semiconductor crystals containing p-n junctions
US2890976A (en) * 1954-12-30 1959-06-16 Sprague Electric Co Monocrystalline tubular semiconductor
NL105904C (fr) * 1955-12-30
US2908004A (en) * 1957-05-10 1959-10-06 Levinson John Temperature control for crystal pulling
US3004835A (en) * 1958-11-20 1961-10-17 Mallinckrodt Chemical Works Method of preparing silicon rods
US3034871A (en) * 1958-12-29 1962-05-15 Texas Instruments Inc Method of forming silicon into intricate shapes

Also Published As

Publication number Publication date
GB990161A (en) 1965-04-28
BE602011A (fr) 1961-10-02
US3226269A (en) 1965-12-28
NL263037A (nl) 1964-05-25
FR1289687A (fr) 1962-04-06
SE220535C1 (sv) 1968-05-14

Similar Documents

Publication Publication Date Title
CH349703A (fr) Procédé de fabrication d&#39;un dispositif semi-conducteur
CH400370A (fr) Procédé de fabrication d&#39;un dispositif semi-conducteur
BE598393A (fr) Procédé de fabrication d&#39;un dispositif semi-conducteur en silicium
FR1293869A (fr) Procédé de fabrication d&#39;un dispositif à semi-conducteur
BE600139A (fr) Procédé de fabrication d&#39;un agencement semi-conducteur.
FR1364466A (fr) Procédé de fabrication d&#39;un dispositif à semi-conducteur
BE603829A (fr) Procédé d&#39;obtention d&#39;un dispositif magnétique
FR1451676A (fr) Procédé de fabrication d&#39;un dispositif semiconducteur
CH369214A (fr) Procédé de fabrication d&#39;un dispositif semi-conducteur et dispositif semi-conducteur obtenu par ce procédé
FR1206897A (fr) Procédé de fabrication d&#39;un dispositif semi-conducteur
CH337888A (fr) Procédé de fabrication d&#39;un dispositif thermoélectrique
FR1277290A (fr) Procédé de fabrication d&#39;un dispositif semi-conducteur
FR1291471A (fr) Procédé de fabrication d&#39;un dispositif à semi-conducteur
BE605339A (fr) Procédé de fabrication des raccordements électriques d&#39;un dispositif semi-conducteur.
BE601416A (fr) Procédé de fabrication d&#39;un dispositif semi-conducteur en silicium.
FR1234100A (fr) Procédé pour la fabrication d&#39;un dispositif semi-conducteur
FR1406461A (fr) Procédé de fabrication d&#39;un dispositif semi-conducteur
FR1286808A (fr) Procédé de fabrication d&#39;un dispositif à semi-conducteur
FR1277874A (fr) Procédé de fabrication d&#39;un dispositif à semi-conducteur
FR1374096A (fr) Procédé de fabrication d&#39;un dispositif à semi-conducteur
FR1348733A (fr) Procédé de fabrication d&#39;un dispositif à semi-conducteur
FR1303969A (fr) Procédé de fabrication d&#39;un composant semi-conducteur
FR1340091A (fr) Procédé de fabrication d&#39;un dispositif à semi-conducteur
FR1336135A (fr) Procédé de fabrication d&#39;un dispositif photosensible
FR1377271A (fr) Procédé de fabrication d&#39;un dispositif semi-conducteur