CH393542A - Hermetisch abgedichtete Halbleiteranordnung und Verfahren zu ihrer Herstellung - Google Patents

Hermetisch abgedichtete Halbleiteranordnung und Verfahren zu ihrer Herstellung

Info

Publication number
CH393542A
CH393542A CH481861A CH481861A CH393542A CH 393542 A CH393542 A CH 393542A CH 481861 A CH481861 A CH 481861A CH 481861 A CH481861 A CH 481861A CH 393542 A CH393542 A CH 393542A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
hermetically sealed
making same
sealed semiconductor
making
Prior art date
Application number
CH481861A
Other languages
English (en)
Inventor
A Wagner Howard
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH393542A publication Critical patent/CH393542A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/17—Containers or parts thereof characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
    • Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Die Bonding (AREA)
  • Ceramic Products (AREA)
CH481861A 1960-05-23 1961-04-25 Hermetisch abgedichtete Halbleiteranordnung und Verfahren zu ihrer Herstellung CH393542A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31071A US3068382A (en) 1960-05-23 1960-05-23 Hermetically sealed semiconductor devices

Publications (1)

Publication Number Publication Date
CH393542A true CH393542A (de) 1965-06-15

Family

ID=21857492

Family Applications (1)

Application Number Title Priority Date Filing Date
CH481861A CH393542A (de) 1960-05-23 1961-04-25 Hermetisch abgedichtete Halbleiteranordnung und Verfahren zu ihrer Herstellung

Country Status (3)

Country Link
US (1) US3068382A (de)
CH (1) CH393542A (de)
DE (1) DE1218069B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1248808B (de) * 1962-03-23 1900-01-01
CH393547A (de) * 1962-05-03 1965-06-15 Bbc Brown Boveri & Cie Gehäuse für einen Halbleitergleichrichter
US3484660A (en) * 1963-09-20 1969-12-16 Gen Electric Sealed electrical device
US3280388A (en) * 1964-03-09 1966-10-18 Int Rectifier Corp Housing for multi-lead semiconductor device including crimping connection means for one lead
DE1514474C3 (de) * 1965-06-05 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE534817A (de) * 1954-01-14 1900-01-01
US2889498A (en) * 1955-11-08 1959-06-02 Westinghouse Electric Corp Semiconductor rectifier assembly
NL101591C (de) * 1956-03-22
DE1050913B (de) * 1956-08-10 1959-02-19
DE1111299B (de) * 1956-11-23 1961-07-20 Philips Nv Vakuumdichte Verbindung zwischen zwei Metallteilen der Huelle von Halbleiteranordnungen und Verfahren zu ihrer Herstellung
FR1194115A (de) * 1957-04-03 1959-11-06
US2917686A (en) * 1957-08-19 1959-12-15 Westinghouse Electric Corp Semiconductor rectifier device
DE1246884B (de) * 1957-10-22 1967-08-10 Philips Nv Halbleitendes Elektrodensystem

Also Published As

Publication number Publication date
DE1218069B (de) 1966-06-02
US3068382A (en) 1962-12-11

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