CH395349A - Verfahren zur Herstellung einer Halbleiteranordnung - Google Patents

Verfahren zur Herstellung einer Halbleiteranordnung

Info

Publication number
CH395349A
CH395349A CH1318062A CH1318062A CH395349A CH 395349 A CH395349 A CH 395349A CH 1318062 A CH1318062 A CH 1318062A CH 1318062 A CH1318062 A CH 1318062A CH 395349 A CH395349 A CH 395349A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH1318062A
Other languages
English (en)
Inventor
Rosenheinrich Rene
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH395349A publication Critical patent/CH395349A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thyristors (AREA)
CH1318062A 1962-02-01 1962-11-09 Verfahren zur Herstellung einer Halbleiteranordnung CH395349A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1962S0077827 DE1444521B2 (de) 1962-02-01 1962-02-01 Verfahren zur herstellung einer halbleiteranordnung

Publications (1)

Publication Number Publication Date
CH395349A true CH395349A (de) 1965-07-15

Family

ID=7507052

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1318062A CH395349A (de) 1962-02-01 1962-11-09 Verfahren zur Herstellung einer Halbleiteranordnung

Country Status (4)

Country Link
US (1) US3287187A (de)
CH (1) CH395349A (de)
DE (1) DE1444521B2 (de)
GB (1) GB985404A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053406A (de) * 1963-05-18
US3391035A (en) * 1965-08-20 1968-07-02 Westinghouse Electric Corp Method of making p-nu-junction devices by diffusion
US3441454A (en) * 1965-10-29 1969-04-29 Westinghouse Electric Corp Method of fabricating a semiconductor by diffusion
US3767463A (en) * 1967-01-13 1973-10-23 Ibm Method for controlling semiconductor surface potential
USRE28402E (en) * 1967-01-13 1975-04-29 Method for controlling semiconductor surface potential
DE1812059A1 (de) * 1968-12-02 1971-06-09 Telefunken Patent Verfahren zum Herstellen einer Halbleiteranordnung
JPS5138516B1 (de) * 1969-03-14 1976-10-22
JPS5116311B1 (de) * 1969-03-28 1976-05-22
JPS5815935B2 (ja) * 1973-09-14 1983-03-28 セイコーエプソン株式会社 ハンドウタイソウチノセイゾウホウホウ
GB1503223A (en) * 1975-07-26 1978-03-08 Int Computers Ltd Formation of buried layers in a substrate
US4104091A (en) * 1977-05-20 1978-08-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Application of semiconductor diffusants to solar cells by screen printing
US4798764A (en) * 1983-06-08 1989-01-17 Stemcor Corporation Arsenate dopant sources and method of making the sources

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548647A (de) * 1955-06-28
NL251064A (de) * 1955-11-04
NL109817C (de) * 1955-12-02
GB909869A (de) * 1958-06-09 1900-01-01
US2974073A (en) * 1958-12-04 1961-03-07 Rca Corp Method of making phosphorus diffused silicon semiconductor devices
US3067071A (en) * 1960-01-04 1962-12-04 Ibm Semiconductor devices and methods of applying metal films thereto
US3114663A (en) * 1960-03-29 1963-12-17 Rca Corp Method of providing semiconductor wafers with protective and masking coatings
US3145126A (en) * 1961-01-10 1964-08-18 Clevite Corp Method of making diffused junctions

Also Published As

Publication number Publication date
DE1444521A1 (de) 1968-12-19
DE1444521B2 (de) 1971-02-25
GB985404A (en) 1965-03-10
US3287187A (en) 1966-11-22

Similar Documents

Publication Publication Date Title
AT261004B (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT280349B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH513514A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH533907A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT280350B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH512144A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH530714A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH381329A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH391111A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT256938B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH403991A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT299311B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH403436A (de) Verfahren zum Herstellen einer Halbleiteranordnung
CH423999A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH520405A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH418466A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH474856A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH519790A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH444826A (de) Verfahren und Vorrichtung zur Herstellung einer Halbleiteranordnung
CH416575A (de) Verfahren zum Herstellen einer Halbleiteranordnung
AT299309B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH399598A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH429672A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH368240A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH474158A (de) Verfahren zur Herstellung einer Halbleitervorrichtung