CH401272A - Hochspannungs-Halbleitergleichrichter - Google Patents

Hochspannungs-Halbleitergleichrichter

Info

Publication number
CH401272A
CH401272A CH566562A CH566562A CH401272A CH 401272 A CH401272 A CH 401272A CH 566562 A CH566562 A CH 566562A CH 566562 A CH566562 A CH 566562A CH 401272 A CH401272 A CH 401272A
Authority
CH
Switzerland
Prior art keywords
high voltage
voltage semiconductor
semiconductor rectifier
rectifier
voltage
Prior art date
Application number
CH566562A
Other languages
English (en)
Inventor
W Smart Lee
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH401272A publication Critical patent/CH401272A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
CH566562A 1961-06-07 1962-05-11 Hochspannungs-Halbleitergleichrichter CH401272A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11555061A 1961-06-07 1961-06-07
US507216A US3335296A (en) 1961-06-07 1965-11-10 Semiconductor devices capable of supporting large reverse voltages

Publications (1)

Publication Number Publication Date
CH401272A true CH401272A (de) 1965-10-31

Family

ID=26813313

Family Applications (1)

Application Number Title Priority Date Filing Date
CH566562A CH401272A (de) 1961-06-07 1962-05-11 Hochspannungs-Halbleitergleichrichter

Country Status (3)

Country Link
US (1) US3335296A (de)
CH (1) CH401272A (de)
DE (1) DE1294558B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements
US3700982A (en) * 1968-08-12 1972-10-24 Int Rectifier Corp Controlled rectifier having gate electrode which extends across the gate and cathode layers
US3622844A (en) * 1969-08-18 1971-11-23 Texas Instruments Inc Avalanche photodiode utilizing schottky-barrier configurations
US3798512A (en) * 1970-09-28 1974-03-19 Ibm Fet device with guard ring and fabrication method therefor
US4003072A (en) * 1972-04-20 1977-01-11 Sony Corporation Semiconductor device with high voltage breakdown resistance
JPS523277B2 (de) * 1973-05-19 1977-01-27
JPS5242634B2 (de) * 1973-09-03 1977-10-25
JPS5631898B2 (de) * 1974-01-11 1981-07-24
US3979769A (en) * 1974-10-16 1976-09-07 General Electric Company Gate modulated bipolar transistor
US4032961A (en) * 1974-10-16 1977-06-28 General Electric Company Gate modulated bipolar transistor
US5083185A (en) * 1985-02-15 1992-01-21 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Surge absorption device
US5949124A (en) * 1995-10-31 1999-09-07 Motorola, Inc. Edge termination structure
US6060906A (en) * 1998-04-29 2000-05-09 Industrial Technology Research Institute Bidirectional buffer with active pull-up/latch circuit for mixed-voltage applications
JP3914785B2 (ja) 2002-02-20 2007-05-16 新電元工業株式会社 ダイオード素子
EP2259325B1 (de) * 2002-02-20 2013-12-25 Shindengen Electric Manufacturing Co., Ltd. Transistoranordnung
US6841825B2 (en) * 2002-06-05 2005-01-11 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP3971670B2 (ja) * 2002-06-28 2007-09-05 新電元工業株式会社 半導体装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
US2764642A (en) * 1952-10-31 1956-09-25 Bell Telephone Labor Inc Semiconductor signal translating devices
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US3087098A (en) * 1954-10-05 1963-04-23 Motorola Inc Transistor
US2929999A (en) * 1955-09-19 1960-03-22 Philco Corp Semiconductive device and apparatus
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit
US3099591A (en) * 1958-12-15 1963-07-30 Shockley William Semiconductive device
US3087099A (en) * 1959-01-02 1963-04-23 Sprague Electric Co Narrow web mesa transistor structure
US3148284A (en) * 1959-01-30 1964-09-08 Zenith Radio Corp Semi-conductor apparatus with field-biasing means
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
US2919388A (en) * 1959-03-17 1959-12-29 Hoffman Electronics Corp Semiconductor devices
US3091703A (en) * 1959-04-08 1963-05-28 Raytheon Co Semiconductor devices utilizing carrier injection into a space charge region
DE1796305U (de) * 1959-05-16 1959-09-24 Siemens Ag Halbleiteranordnung mit mindestens einer flaechigen elektrode.
US2991371A (en) * 1959-06-15 1961-07-04 Sprague Electric Co Variable capacitor
US3035186A (en) * 1959-06-15 1962-05-15 Bell Telephone Labor Inc Semiconductor switching apparatus
GB915688A (en) * 1959-10-07 1963-01-16 Pye Ltd Improvements in semiconductor devices
NL261720A (de) * 1960-03-04
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
NL267818A (de) * 1960-08-02
NL267390A (de) * 1960-09-28
US3076104A (en) * 1960-11-29 1963-01-29 Texas Instruments Inc Mesa diode with guarded junction and reverse bias means for leakage control
US3210617A (en) * 1961-01-11 1965-10-05 Westinghouse Electric Corp High gain transistor comprising direct connection between base and emitter electrodes
US3210560A (en) * 1961-04-17 1965-10-05 Westinghouse Electric Corp Semiconductor device
AT233119B (de) * 1962-01-26 1964-04-25 Siemens Ag Halbleiteranordnung mit einem im wesentlichen einkristallinen Halbleiterkörper

Also Published As

Publication number Publication date
US3335296A (en) 1967-08-08
DE1294558B (de) 1969-05-08

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