CH402195A - Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht - Google Patents

Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht

Info

Publication number
CH402195A
CH402195A CH203663A CH203663A CH402195A CH 402195 A CH402195 A CH 402195A CH 203663 A CH203663 A CH 203663A CH 203663 A CH203663 A CH 203663A CH 402195 A CH402195 A CH 402195A
Authority
CH
Switzerland
Prior art keywords
semiconductor layer
layer deposited
heater during
during epitaxy
epitaxy
Prior art date
Application number
CH203663A
Other languages
English (en)
Inventor
Rummel Theodor Dipl-Ing D Prof
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH402195A publication Critical patent/CH402195A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CH203663A 1962-02-23 1963-02-19 Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht CH402195A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES78192A DE1202616B (de) 1962-02-23 1962-02-23 Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht

Publications (1)

Publication Number Publication Date
CH402195A true CH402195A (de) 1965-11-15

Family

ID=7507298

Family Applications (1)

Application Number Title Priority Date Filing Date
CH203663A CH402195A (de) 1962-02-23 1963-02-19 Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht

Country Status (4)

Country Link
US (1) US3271209A (de)
CH (1) CH402195A (de)
DE (1) DE1202616B (de)
GB (1) GB1004245A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3459152A (en) * 1964-08-28 1969-08-05 Westinghouse Electric Corp Apparatus for epitaxially producing a layer on a substrate
US3372671A (en) * 1965-05-26 1968-03-12 Westinghouse Electric Corp Apparatus for producing vapor growth of silicon crystals
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors
US3556880A (en) * 1968-04-11 1971-01-19 Rca Corp Method of treating semiconductor devices to improve lifetime
NL7906996A (nl) * 1979-09-20 1981-03-24 Philips Nv Werkwijze voor het reinigen van een reaktor.
DE4123342C2 (de) * 1991-07-15 1999-08-19 Leybold Ag Reihenverdampfer für Vakuumbedampfungsanlagen
DE102010015610B4 (de) 2010-04-19 2022-08-25 Axel R. Hidde Dichtring mit Membranventil

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2199418A (en) * 1938-09-16 1940-05-07 John C Redmond Surface treatment of metals
US2430994A (en) * 1944-07-29 1947-11-18 Rca Corp Method of coating lenses
NL99536C (de) * 1951-03-07 1900-01-01
DE966879C (de) * 1953-02-21 1957-09-12 Standard Elektrik Ag Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz
US2842464A (en) * 1953-03-02 1958-07-08 Saint Gobain Method of producing an electrical resistance on glass
BE547665A (de) * 1955-06-28
DE1054436B (de) * 1956-02-11 1959-04-09 Pechiney Prod Chimiques Sa Verfahren zur Herstellung von kompaktem Silicium hohen Reinheitsgrades
US2852418A (en) * 1956-02-20 1958-09-16 Michigan Foundry Supply Compan Method for treating metal borings
NL105256C (de) * 1956-03-05
US3007816A (en) * 1958-07-28 1961-11-07 Motorola Inc Decontamination process
US2992127A (en) * 1958-12-23 1961-07-11 Texas Instruments Inc Novel graphite articles and method of making
NL260906A (de) * 1960-02-12
US3151006A (en) * 1960-02-12 1964-09-29 Siemens Ag Use of a highly pure semiconductor carrier material in a vapor deposition process
US3086881A (en) * 1960-08-15 1963-04-23 Union Carbide Corp Method for securing adhesion of gas plating
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member

Also Published As

Publication number Publication date
GB1004245A (en) 1965-09-15
DE1202616B (de) 1965-10-07
US3271209A (en) 1966-09-06

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