CH403439A - Verfahren zum Dotieren von Silizium mit Bor - Google Patents

Verfahren zum Dotieren von Silizium mit Bor

Info

Publication number
CH403439A
CH403439A CH8562A CH8562A CH403439A CH 403439 A CH403439 A CH 403439A CH 8562 A CH8562 A CH 8562A CH 8562 A CH8562 A CH 8562A CH 403439 A CH403439 A CH 403439A
Authority
CH
Switzerland
Prior art keywords
boron
doping silicon
doping
silicon
Prior art date
Application number
CH8562A
Other languages
English (en)
Inventor
Konrad Dr Reuschel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH403439A publication Critical patent/CH403439A/de

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00Compositions
    • Y10S252/95Doping agent source material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
CH8562A 1961-05-16 1962-01-04 Verfahren zum Dotieren von Silizium mit Bor CH403439A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0073985 1961-05-16

Publications (1)

Publication Number Publication Date
CH403439A true CH403439A (de) 1965-11-30

Family

ID=7504333

Family Applications (1)

Application Number Title Priority Date Filing Date
CH8562A CH403439A (de) 1961-05-16 1962-01-04 Verfahren zum Dotieren von Silizium mit Bor

Country Status (4)

Country Link
US (1) US3243373A (de)
CH (1) CH403439A (de)
DE (1) DE1419656B2 (de)
GB (1) GB931692A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2624756A1 (de) * 1976-06-02 1977-12-15 Siemens Ag Verfahren zum herstellen von aus silicium oder siliciumcarbid bestehenden, direkt beheizbaren rohren
JPS62101026A (ja) * 1985-10-26 1987-05-11 Shin Etsu Chem Co Ltd 不純物拡散源

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL168491B (de) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
US3060123A (en) * 1952-12-17 1962-10-23 Bell Telephone Labor Inc Method of processing semiconductive materials
GB797950A (en) * 1954-06-10 1958-07-09 Rca Corp Semi-conductor alloys
NL255390A (de) * 1958-09-20 1900-01-01

Also Published As

Publication number Publication date
DE1419656B2 (de) 1972-04-20
DE1419656A1 (de) 1969-10-02
GB931692A (en) 1963-07-17
US3243373A (en) 1966-03-29

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