CH403988A - Elektrisches Halbleiterbauelement, Verfahren zu seiner Herstellung und Ofen zur Durchführung dieses Verfahrens - Google Patents

Elektrisches Halbleiterbauelement, Verfahren zu seiner Herstellung und Ofen zur Durchführung dieses Verfahrens

Info

Publication number
CH403988A
CH403988A CH6698658A CH6698658A CH403988A CH 403988 A CH403988 A CH 403988A CH 6698658 A CH6698658 A CH 6698658A CH 6698658 A CH6698658 A CH 6698658A CH 403988 A CH403988 A CH 403988A
Authority
CH
Switzerland
Prior art keywords
furnace
manufacture
carrying
semiconductor component
electric semiconductor
Prior art date
Application number
CH6698658A
Other languages
English (en)
Inventor
Sils Victor
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH403988A publication Critical patent/CH403988A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
    • B23K35/005—Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of a refractory metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
    • B23K2035/008—Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of silicium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
CH6698658A 1957-12-09 1958-12-05 Elektrisches Halbleiterbauelement, Verfahren zu seiner Herstellung und Ofen zur Durchführung dieses Verfahrens CH403988A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US701548A US2957112A (en) 1957-12-09 1957-12-09 Treatment of tantalum semiconductor electrodes

Publications (1)

Publication Number Publication Date
CH403988A true CH403988A (de) 1965-12-15

Family

ID=24817805

Family Applications (1)

Application Number Title Priority Date Filing Date
CH6698658A CH403988A (de) 1957-12-09 1958-12-05 Elektrisches Halbleiterbauelement, Verfahren zu seiner Herstellung und Ofen zur Durchführung dieses Verfahrens

Country Status (3)

Country Link
US (1) US2957112A (de)
CH (1) CH403988A (de)
GB (1) GB846448A (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3115597A (en) * 1953-11-30 1963-12-24 Salzberg Motor control system adapted for telephone answering and message recording
US3219890A (en) * 1959-02-25 1965-11-23 Transitron Electronic Corp Semiconductor barrier-layer device and terminal structure thereon
US3253320A (en) * 1959-02-25 1966-05-31 Transitron Electronic Corp Method of making semi-conductor devices with plated area
NL261398A (de) * 1960-03-18 1900-01-01
US3115697A (en) * 1960-08-31 1963-12-31 Pacific Semiconductors Inc Method of making a low resistance ohmic contact
US3214654A (en) * 1961-02-01 1965-10-26 Rca Corp Ohmic contacts to iii-v semiconductive compound bodies
NL275010A (de) * 1961-03-28 1900-01-01
NL289148A (de) * 1961-08-12
DE1294560C2 (de) * 1961-08-28 1975-01-23 Semikron, Gesellschaft für Gleichrichterbau und Elektronik mbH, 8500 Nürnberg Verfahren zur weichlotkontaktierung eines halbleiterbauelements
DE1196793B (de) * 1961-08-28 1965-07-15 Elektronik M B H Verfahren zum Kontaktieren von Halbleiter-koerpern fuer Halbleiterbauelemente
BE624264A (de) * 1961-10-31 1900-01-01
US3241011A (en) * 1962-12-26 1966-03-15 Hughes Aircraft Co Silicon bonding technology
NL303035A (de) * 1963-02-06 1900-01-01
GB2137547B (en) * 1983-03-26 1986-10-22 Ferranti Plc Joints between articles of materials of different coefficients of thermal expansion
ATE45057T1 (de) * 1985-03-13 1989-08-15 Siemens Ag Duennfilmschichtaufbau mit einer reaktiven zwischenschicht fuer integrierte halbleiterschaltungen.
US7362580B2 (en) * 2004-06-18 2008-04-22 Intel Corporation Electronic assembly having an indium wetting layer on a thermally conductive body

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2792538A (en) * 1950-09-14 1957-05-14 Bell Telephone Labor Inc Semiconductor translating devices with embedded electrode
US2818536A (en) * 1952-08-23 1957-12-31 Hughes Aircraft Co Point contact semiconductor devices and methods of making same
US2782492A (en) * 1954-02-11 1957-02-26 Atlas Powder Co Method of bonding fine wires to copper or copper alloys
NL97268C (de) * 1955-04-22 1900-01-01
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
US2820932A (en) * 1956-03-07 1958-01-21 Bell Telephone Labor Inc Contact structure
US2842831A (en) * 1956-08-30 1958-07-15 Bell Telephone Labor Inc Manufacture of semiconductor devices

Also Published As

Publication number Publication date
GB846448A (en) 1960-08-31
US2957112A (en) 1960-10-18

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