CH408876A - Method for manufacturing a semiconductor device - Google Patents

Method for manufacturing a semiconductor device

Info

Publication number
CH408876A
CH408876A CH123363A CH123363A CH408876A CH 408876 A CH408876 A CH 408876A CH 123363 A CH123363 A CH 123363A CH 123363 A CH123363 A CH 123363A CH 408876 A CH408876 A CH 408876A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH123363A
Other languages
German (de)
Inventor
Grabmaier Josef Dr Dipl-Phys
Sirtl Erhard Dr Dipl-Chem
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH408876A publication Critical patent/CH408876A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
CH123363A 1962-02-02 1963-01-31 Method for manufacturing a semiconductor device CH408876A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES77852A DE1236481B (en) 1962-02-02 1962-02-02 Method for producing a semiconductor arrangement by depositing the semiconductor material from the gas phase

Publications (1)

Publication Number Publication Date
CH408876A true CH408876A (en) 1966-03-15

Family

ID=7507071

Family Applications (1)

Application Number Title Priority Date Filing Date
CH123363A CH408876A (en) 1962-02-02 1963-01-31 Method for manufacturing a semiconductor device

Country Status (5)

Country Link
CH (1) CH408876A (en)
DE (1) DE1236481B (en)
GB (1) GB970456A (en)
NL (1) NL288409A (en)
SE (1) SE325641B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372671A (en) * 1965-05-26 1968-03-12 Westinghouse Electric Corp Apparatus for producing vapor growth of silicon crystals
JPS5277590A (en) * 1975-12-24 1977-06-30 Toshiba Corp Semiconductor producing device
NL187414C (en) * 1978-04-21 1991-09-16 Philips Nv METHOD FOR APPLYING AN EPITAXIAL LAYER

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE853926C (en) * 1949-04-02 1952-10-30 Licentia Gmbh Process for the production of dry rectifiers with silicon as a semiconducting substance
DE943422C (en) * 1949-04-02 1956-05-17 Licentia Gmbh Controlled dry rectifier, in particular with germanium, silicon or silicon carbide as semiconducting substance
NL99536C (en) * 1951-03-07 1900-01-01
DE950848C (en) * 1953-03-19 1956-10-18 Heraeus Gmbh W C Process for the production of pure silicon
DE1057845B (en) * 1954-03-10 1959-05-21 Licentia Gmbh Process for the production of monocrystalline semiconducting compounds
DE966471C (en) * 1954-07-14 1957-08-08 Heraeus Gmbh W C Process for the production of pure silicon
DE1063870B (en) * 1956-06-28 1959-08-20 Gustav Weissenberg Method and device for crucible-free growing of single crystals from high-purity silicon or germanium
NL268294A (en) 1960-10-10

Also Published As

Publication number Publication date
SE325641B (en) 1970-07-06
DE1236481B (en) 1967-03-16
NL288409A (en)
GB970456A (en) 1964-09-23

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