CH409885A - Method for the crucible-free pulling of monocrystalline semiconductor rods - Google Patents
Method for the crucible-free pulling of monocrystalline semiconductor rodsInfo
- Publication number
- CH409885A CH409885A CH1454161A CH1454161A CH409885A CH 409885 A CH409885 A CH 409885A CH 1454161 A CH1454161 A CH 1454161A CH 1454161 A CH1454161 A CH 1454161A CH 409885 A CH409885 A CH 409885A
- Authority
- CH
- Switzerland
- Prior art keywords
- crucible
- monocrystalline semiconductor
- semiconductor rods
- free pulling
- pulling
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1961S0072399 DE1259854B (en) | 1961-02-07 | 1961-02-07 | Method for crucible-free zone melting of a rod of semiconductor material held at its ends |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH409885A true CH409885A (en) | 1966-03-31 |
Family
ID=7503165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1454161A CH409885A (en) | 1961-02-07 | 1961-12-14 | Method for the crucible-free pulling of monocrystalline semiconductor rods |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH409885A (en) |
| DE (1) | DE1259854B (en) |
| GB (1) | GB931975A (en) |
| NL (2) | NL129916C (en) |
| SE (1) | SE316152B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6411697A (en) * | 1963-10-15 | 1965-04-20 | ||
| US3944640A (en) * | 1970-09-02 | 1976-03-16 | Arthur D. Little, Inc. | Method for forming refractory fibers by laser energy |
| US4012213A (en) * | 1973-06-14 | 1977-03-15 | Arthur D. Little, Inc. | Apparatus for forming refractory fibers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE975158C (en) * | 1953-12-30 | 1961-09-14 | Siemens Ag | Method and device for crucible-free zone melting of an elongated rod-shaped body |
| AT194444B (en) * | 1953-02-26 | 1958-01-10 | Siemens Ag | Method and device for treating an elongated semiconductor crystal arrangement |
| DE1153908B (en) * | 1958-04-22 | 1963-09-05 | Siemens Ag | Method and device for crucible-free zone melting with changing the spacing of the rod ends |
-
0
- NL NL274321D patent/NL274321A/xx unknown
- NL NL129916D patent/NL129916C/xx active
-
1961
- 1961-02-07 DE DE1961S0072399 patent/DE1259854B/en active Pending
- 1961-12-14 CH CH1454161A patent/CH409885A/en unknown
-
1962
- 1962-02-02 GB GB413062A patent/GB931975A/en not_active Expired
- 1962-02-06 SE SE131062A patent/SE316152B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB931975A (en) | 1963-07-24 |
| NL274321A (en) | |
| SE316152B (en) | 1969-10-20 |
| NL129916C (en) | |
| DE1259854B (en) | 1968-02-01 |
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