CH420390A - Verfahren zum Herstellen von Halbleiterbauelementen aus Siliziumkarbid - Google Patents

Verfahren zum Herstellen von Halbleiterbauelementen aus Siliziumkarbid

Info

Publication number
CH420390A
CH420390A CH917665A CH917665A CH420390A CH 420390 A CH420390 A CH 420390A CH 917665 A CH917665 A CH 917665A CH 917665 A CH917665 A CH 917665A CH 420390 A CH420390 A CH 420390A
Authority
CH
Switzerland
Prior art keywords
silicon carbide
semiconductor components
manufacturing semiconductor
manufacturing
components
Prior art date
Application number
CH917665A
Other languages
English (en)
Inventor
Frederick Rutz Richard
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH420390A publication Critical patent/CH420390A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
CH917665A 1964-06-30 1965-06-30 Verfahren zum Herstellen von Halbleiterbauelementen aus Siliziumkarbid CH420390A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US379225A US3308356A (en) 1964-06-30 1964-06-30 Silicon carbide semiconductor device

Publications (1)

Publication Number Publication Date
CH420390A true CH420390A (de) 1966-09-15

Family

ID=23496340

Family Applications (1)

Application Number Title Priority Date Filing Date
CH917665A CH420390A (de) 1964-06-30 1965-06-30 Verfahren zum Herstellen von Halbleiterbauelementen aus Siliziumkarbid

Country Status (3)

Country Link
US (1) US3308356A (de)
CH (1) CH420390A (de)
GB (1) GB1052587A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3458779A (en) * 1967-11-24 1969-07-29 Gen Electric Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region
DE2519338C3 (de) * 1975-04-30 1979-01-18 Danfoss A/S, Nordborg (Daenemark) Verfahren zur Herstellung eines Thermoelements und dessen Anwendung
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
US5298767A (en) * 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
US5929523A (en) * 1996-03-07 1999-07-27 3C Semiconductor Corporation Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC
US6388272B1 (en) 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
US6204160B1 (en) 1999-02-22 2001-03-20 The United States Of America As Represented By The Secretary Of The Navy Method for making electrical contacts and junctions in silicon carbide

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL87348C (de) * 1954-03-19 1900-01-01
GB843267A (en) * 1956-09-14 1960-08-04 Ass Elect Ind Improvements relating to the preparation of semi-conductor materials
DE1073110B (de) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Verfahren zur Herstellung gleichrichtender oder ohmscher Anschlußkontakte an Siliziumkarbidkorpern
NL104185C (de) * 1957-08-16
US2937323A (en) * 1958-05-29 1960-05-17 Westinghouse Electric Corp Fused junctions in silicon carbide
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier
US3082126A (en) * 1959-06-19 1963-03-19 Westinghouse Electric Corp Producing diffused junctions in silicon carbide
US3124454A (en) * 1961-06-20 1964-03-10 Method of making silicon carbide negative resistance diode

Also Published As

Publication number Publication date
US3308356A (en) 1967-03-07
GB1052587A (de)

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