CH427042A - Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps - Google Patents
Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten LeitfähigkeitstypsInfo
- Publication number
- CH427042A CH427042A CH1238464A CH1238464A CH427042A CH 427042 A CH427042 A CH 427042A CH 1238464 A CH1238464 A CH 1238464A CH 1238464 A CH1238464 A CH 1238464A CH 427042 A CH427042 A CH 427042A
- Authority
- CH
- Switzerland
- Prior art keywords
- zones
- opposite conductivity
- body composed
- semiconductor
- conductivity types
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3444—P-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL0045951 | 1963-09-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH427042A true CH427042A (de) | 1966-12-31 |
Family
ID=7271387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1238464A CH427042A (de) | 1963-09-25 | 1964-09-24 | Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3287182A (de) |
| CH (1) | CH427042A (de) |
| NL (1) | NL6411227A (de) |
| SE (1) | SE316836B (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3428870A (en) * | 1965-07-29 | 1969-02-18 | Gen Electric | Semiconductor devices |
| DE2610942C2 (de) * | 1976-03-16 | 1983-04-28 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen eines Halbleiterbauelements mit in einem Halbleiterkörper monolithisch integrierten Halbleiterelementeinheiten |
| DE3017313A1 (de) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung |
| IT1186338B (it) * | 1985-10-29 | 1987-11-26 | Sgs Microelettronica Spa | Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE549320A (de) * | 1955-09-02 | |||
| DE1046783B (de) * | 1956-07-13 | 1958-12-18 | Siemens Ag | Halbleiteranordnung mit einem schwach dotierten Halbleiterkoerper und einem grossflaechigen p-n-UEbergang |
| US2980830A (en) * | 1956-08-22 | 1961-04-18 | Shockley William | Junction transistor |
| US3007090A (en) * | 1957-09-04 | 1961-10-31 | Ibm | Back resistance control for junction semiconductor devices |
| DE1137140B (de) * | 1959-04-06 | 1962-09-27 | Int Standard Electric Corp | Verfahren zum Herstellen von elektrischen Halbleiterbauelementen mit verminderter Oberflaechenleitfaehigkeit am p-n-UEbergang und verminderter Alterung |
| US3146135A (en) * | 1959-05-11 | 1964-08-25 | Clevite Corp | Four layer semiconductive device |
| NL251532A (de) * | 1959-06-17 | |||
| FR1273633A (fr) * | 1959-11-21 | 1961-10-13 | Siemens Ag | Procédé d'obtention d'éléments semi-conducteurs |
| NL280641A (de) * | 1961-07-07 | |||
| US3184350A (en) * | 1962-04-02 | 1965-05-18 | Ibm | Fluorocarbon compound used in masking of epitaxial growth of semiconductors by vapordeposition |
| US3178798A (en) * | 1962-05-09 | 1965-04-20 | Ibm | Vapor deposition process wherein the vapor contains both donor and acceptor impurities |
-
1964
- 1964-09-24 CH CH1238464A patent/CH427042A/de unknown
- 1964-09-25 NL NL6411227A patent/NL6411227A/xx unknown
- 1964-09-25 SE SE11530/64A patent/SE316836B/xx unknown
- 1964-09-25 US US399320A patent/US3287182A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3287182A (en) | 1966-11-22 |
| DE1464244A1 (de) | 1969-01-02 |
| SE316836B (de) | 1969-11-03 |
| DE1464244B2 (de) | 1972-04-20 |
| NL6411227A (de) | 1965-03-26 |
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