CH427905A - Anisotrope magnetische Dünnschichtspeicherzelle für die Speicherung von Binärwerten - Google Patents

Anisotrope magnetische Dünnschichtspeicherzelle für die Speicherung von Binärwerten

Info

Publication number
CH427905A
CH427905A CH1684864A CH1684864A CH427905A CH 427905 A CH427905 A CH 427905A CH 1684864 A CH1684864 A CH 1684864A CH 1684864 A CH1684864 A CH 1684864A CH 427905 A CH427905 A CH 427905A
Authority
CH
Switzerland
Prior art keywords
storage
thin film
memory cell
magnetic thin
binary values
Prior art date
Application number
CH1684864A
Other languages
English (en)
Inventor
Irving Bertelsen Bruce
Guenther Hottenrott Hans
James Kump Herbert
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH427905A publication Critical patent/CH427905A/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49069—Data storage inductor or core

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Thin Magnetic Films (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CH1684864A 1963-12-31 1964-12-30 Anisotrope magnetische Dünnschichtspeicherzelle für die Speicherung von Binärwerten CH427905A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33485863A 1963-12-31 1963-12-31

Publications (1)

Publication Number Publication Date
CH427905A true CH427905A (de) 1967-01-15

Family

ID=23309170

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1684864A CH427905A (de) 1963-12-31 1964-12-30 Anisotrope magnetische Dünnschichtspeicherzelle für die Speicherung von Binärwerten

Country Status (5)

Country Link
US (1) US3435428A (de)
CH (1) CH427905A (de)
DE (1) DE1449803A1 (de)
GB (1) GB1088244A (de)
SE (1) SE338196B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3516079A (en) * 1966-06-29 1970-06-02 Ibm Magnetic storage device which exhibits pseudo-biaxial magnetic properties

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB922602A (en) * 1959-06-30 1963-04-03 Ibm A data storage device
US3320597A (en) * 1963-04-15 1967-05-16 Burroughs Corp Magnetic data store with nondestructive read-out

Also Published As

Publication number Publication date
US3435428A (en) 1969-03-25
SE338196B (de) 1971-08-30
DE1449803A1 (de) 1969-11-06
GB1088244A (en) 1967-10-25

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