CH433530A - Anordnung mit einer steuerbaren Schaltdiode mit mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp - Google Patents

Anordnung mit einer steuerbaren Schaltdiode mit mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp

Info

Publication number
CH433530A
CH433530A CH1302664A CH1302664A CH433530A CH 433530 A CH433530 A CH 433530A CH 1302664 A CH1302664 A CH 1302664A CH 1302664 A CH1302664 A CH 1302664A CH 433530 A CH433530 A CH 433530A
Authority
CH
Switzerland
Prior art keywords
zones
arrangement
different line
controllable switching
switching diode
Prior art date
Application number
CH1302664A
Other languages
English (en)
Inventor
Hans-Norbert Dipl In Toussaint
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH433530A publication Critical patent/CH433530A/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/035—Diffusion through a layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
CH1302664A 1963-10-10 1964-10-07 Anordnung mit einer steuerbaren Schaltdiode mit mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp CH433530A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES87803A DE1190506B (de) 1963-10-10 1963-10-10 Optisch gesteuerte, mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp aufweisende Schalt- oder Kippdiode

Publications (1)

Publication Number Publication Date
CH433530A true CH433530A (de) 1967-04-15

Family

ID=7514044

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1302664A CH433530A (de) 1963-10-10 1964-10-07 Anordnung mit einer steuerbaren Schaltdiode mit mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp

Country Status (7)

Country Link
US (1) US3370174A (de)
BE (1) BE654272A (de)
CH (1) CH433530A (de)
DE (1) DE1190506B (de)
GB (1) GB1071137A (de)
NL (1) NL6411616A (de)
SE (1) SE313837B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK114912B (da) * 1964-07-15 1969-08-18 R Relsted Vælgerkobling med lysimpulsstyring til anvendelse i automatiske koblingsanlæg samt vælger og koblingsanlæg opbygget med den nævnte vælgerkobling.
FR1518717A (fr) * 1966-12-21 1968-03-29 Radiotechnique Coprim Rtc Perfectionnements aux diodes électroluminescentes
US3524986A (en) * 1967-02-06 1970-08-18 Gen Electric Semiconductor light gating of light activated semiconductor power control circuits
US3628039A (en) * 1969-12-29 1971-12-14 Dana Lab Inc Electromagnetic radiation wave signal transmission apparatus
US3697762A (en) * 1970-12-14 1972-10-10 Philips Corp Photo electric switching device
US3693060A (en) * 1971-04-13 1972-09-19 Philips Corp Solid-state relay using light-emitting diodes
GB1432697A (en) * 1973-05-04 1976-04-22 Standard Telephones Cables Ltd Optically coupled semiconductive switching devices
US3851173A (en) * 1973-06-25 1974-11-26 Texas Instruments Inc Thermal energy receiver
FR2272377B1 (de) * 1974-05-24 1977-06-24 Texas Instruments France
GB1517537A (en) * 1975-07-16 1978-07-12 Post Office Lasers and photo-detectors
US4040078A (en) * 1976-05-11 1977-08-02 Bell Telephone Laboratories, Incorporated Opto-isolators and method of manufacture
US4143385A (en) * 1976-09-30 1979-03-06 Hitachi, Ltd. Photocoupler
US4596050A (en) * 1984-04-26 1986-06-17 Rogers Gordon W Information processing system using optically encoded signals
US5438210A (en) * 1993-10-22 1995-08-01 Worley; Eugene R. Optical isolation connections using integrated circuit techniques
US5808322A (en) * 1997-04-01 1998-09-15 Hewlett-Packard Company Faster switching GaAs FET switches by illumination with high intensity light

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3096442A (en) * 1959-01-02 1963-07-02 Texas Instruments Inc Light sensitive solid state relay device
NL113647C (de) * 1959-09-12
US3192387A (en) * 1961-03-22 1965-06-29 Robert M Goodman Electro-optical device for producing a modulated voltage

Also Published As

Publication number Publication date
NL6411616A (de) 1965-04-12
DE1190506B (de) 1965-04-08
SE313837B (de) 1969-08-25
US3370174A (en) 1968-02-20
GB1071137A (en) 1967-06-07
BE654272A (de) 1965-04-12

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