CH442534A - Verfahren zur Herstellung eines Halbleiterelementes - Google Patents

Verfahren zur Herstellung eines Halbleiterelementes

Info

Publication number
CH442534A
CH442534A CH990966A CH990666A CH442534A CH 442534 A CH442534 A CH 442534A CH 990966 A CH990966 A CH 990966A CH 990666 A CH990666 A CH 990666A CH 442534 A CH442534 A CH 442534A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor element
semiconductor
Prior art date
Application number
CH990966A
Other languages
English (en)
Inventor
Erich Dr Weisshaar
Original Assignee
Transistor Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Transistor Ag filed Critical Transistor Ag
Priority to CH990966A priority Critical patent/CH442534A/de
Priority to DE19671644029 priority patent/DE1644029A1/de
Priority to GB29054/67A priority patent/GB1179062A/en
Priority to NL6709492A priority patent/NL6709492A/xx
Publication of CH442534A publication Critical patent/CH442534A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
CH990966A 1966-07-08 1966-07-08 Verfahren zur Herstellung eines Halbleiterelementes CH442534A (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CH990966A CH442534A (de) 1966-07-08 1966-07-08 Verfahren zur Herstellung eines Halbleiterelementes
DE19671644029 DE1644029A1 (de) 1966-07-08 1967-06-13 Das Verfahren zur Herstellung eines Halbleiterelementes
GB29054/67A GB1179062A (en) 1966-07-08 1967-06-23 Improvements in or relating to the manufacture of semiconductor devices.
NL6709492A NL6709492A (de) 1966-07-08 1967-07-07

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH990966 1966-07-08
CH990966A CH442534A (de) 1966-07-08 1966-07-08 Verfahren zur Herstellung eines Halbleiterelementes

Publications (1)

Publication Number Publication Date
CH442534A true CH442534A (de) 1967-08-31

Family

ID=25705489

Family Applications (1)

Application Number Title Priority Date Filing Date
CH990966A CH442534A (de) 1966-07-08 1966-07-08 Verfahren zur Herstellung eines Halbleiterelementes

Country Status (4)

Country Link
CH (1) CH442534A (de)
DE (1) DE1644029A1 (de)
GB (1) GB1179062A (de)
NL (1) NL6709492A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3940288A (en) * 1973-05-16 1976-02-24 Fujitsu Limited Method of making a semiconductor device
DE2611207C3 (de) * 1976-03-17 1981-11-12 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum Dotieren von Halbleiterscheiben

Also Published As

Publication number Publication date
GB1179062A (en) 1970-01-28
NL6709492A (de) 1968-01-09
DE1644029A1 (de) 1971-12-30

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