CH446440A - Schaltung mit mindestens einem Flip-Flop zur vorübergehenden Speicherung von Datensignalen - Google Patents

Schaltung mit mindestens einem Flip-Flop zur vorübergehenden Speicherung von Datensignalen

Info

Publication number
CH446440A
CH446440A CH877865A CH877865A CH446440A CH 446440 A CH446440 A CH 446440A CH 877865 A CH877865 A CH 877865A CH 877865 A CH877865 A CH 877865A CH 446440 A CH446440 A CH 446440A
Authority
CH
Switzerland
Prior art keywords
flop
flip
circuit
temporary storage
data signals
Prior art date
Application number
CH877865A
Other languages
English (en)
Inventor
Stopper Herbert
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of CH446440A publication Critical patent/CH446440A/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4026—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Static Random-Access Memory (AREA)
CH877865A 1964-06-29 1965-06-23 Schaltung mit mindestens einem Flip-Flop zur vorübergehenden Speicherung von Datensignalen CH446440A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37872664A 1964-06-29 1964-06-29

Publications (1)

Publication Number Publication Date
CH446440A true CH446440A (de) 1967-11-15

Family

ID=23494312

Family Applications (1)

Application Number Title Priority Date Filing Date
CH877865A CH446440A (de) 1964-06-29 1965-06-23 Schaltung mit mindestens einem Flip-Flop zur vorübergehenden Speicherung von Datensignalen

Country Status (6)

Country Link
US (1) US3421026A (de)
CH (1) CH446440A (de)
DE (1) DE1265784B (de)
FR (1) FR1455187A (de)
GB (1) GB1063003A (de)
SE (1) SE312578B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3539839A (en) * 1966-01-31 1970-11-10 Nippon Electric Co Semiconductor memory device
US3508209A (en) * 1966-03-31 1970-04-21 Ibm Monolithic integrated memory array structure including fabrication and package therefor
US3540010A (en) * 1968-08-27 1970-11-10 Bell Telephone Labor Inc Diode-coupled semiconductive memory
DE1912176C2 (de) * 1969-03-11 1983-10-27 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Speicherzelle
GB1232946A (de) * 1970-02-06 1971-05-26
US3720821A (en) * 1971-03-04 1973-03-13 Bell Telephone Labor Inc Threshold logic circuits
US3885169A (en) * 1971-03-04 1975-05-20 Bell Telephone Labor Inc Storage-processor element including a bistable circuit and a steering circuit
US4302823A (en) * 1979-12-27 1981-11-24 International Business Machines Corp. Differential charge sensing system
US5107507A (en) * 1988-05-26 1992-04-21 International Business Machines Bidirectional buffer with latch and parity capability
US5173619A (en) * 1988-05-26 1992-12-22 International Business Machines Corporation Bidirectional buffer with latch and parity capability
US4991138A (en) * 1989-04-03 1991-02-05 International Business Machines Corporation High speed memory cell with multiple port capability
US5629569A (en) * 1995-05-15 1997-05-13 Intermatic, Inc. Thermal photocontrol switch circuit
CN103632712A (zh) 2012-08-27 2014-03-12 辉达公司 存储单元和存储器
US9685207B2 (en) 2012-12-04 2017-06-20 Nvidia Corporation Sequential access memory with master-slave latch pairs and method of operating
US9281817B2 (en) 2012-12-31 2016-03-08 Nvidia Corporation Power conservation using gray-coded address sequencing
US20140244921A1 (en) * 2013-02-26 2014-08-28 Nvidia Corporation Asymmetric multithreaded fifo memory
US10141930B2 (en) 2013-06-04 2018-11-27 Nvidia Corporation Three state latch

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1050376B (de) * 1959-02-12 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Einrichtungen an bistabilen HaIbleiterkippschaltungen als Gedächtniselemente in Steuer und Regelanlagen zur Vermeidung von Fch'kommandos nach Netzspannungsausfallen
US2888580A (en) * 1955-05-02 1959-05-26 North American Aviation Inc Transistor multivibrator
BE553183A (de) * 1955-12-07
US3173028A (en) * 1962-02-13 1965-03-09 Westinghouse Electric Corp Solid state bistable multivibrator

Also Published As

Publication number Publication date
GB1063003A (en) 1967-03-22
DE1265784B (de) 1968-04-11
SE312578B (de) 1969-07-21
FR1455187A (fr) 1966-04-01
US3421026A (en) 1969-01-07

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