CH465013A - Mémoire matricielle en circuits intégrés - Google Patents

Mémoire matricielle en circuits intégrés

Info

Publication number
CH465013A
CH465013A CH316267A CH316267A CH465013A CH 465013 A CH465013 A CH 465013A CH 316267 A CH316267 A CH 316267A CH 316267 A CH316267 A CH 316267A CH 465013 A CH465013 A CH 465013A
Authority
CH
Switzerland
Prior art keywords
integrated circuits
matrix memory
matrix
memory
circuits
Prior art date
Application number
CH316267A
Other languages
English (en)
Inventor
Leonie Cagnac Therese Marie
Pierre Le Gall Alain
Guy Yelloz Raphael
Original Assignee
Int Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Standard Electric Corp filed Critical Int Standard Electric Corp
Publication of CH465013A publication Critical patent/CH465013A/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
CH316267A 1966-03-08 1967-03-03 Mémoire matricielle en circuits intégrés CH465013A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR52421A FR1482050A (fr) 1966-03-08 1966-03-08 Mémoire matricielle en circuits intégrés

Publications (1)

Publication Number Publication Date
CH465013A true CH465013A (fr) 1968-11-15

Family

ID=8603141

Family Applications (1)

Application Number Title Priority Date Filing Date
CH316267A CH465013A (fr) 1966-03-08 1967-03-03 Mémoire matricielle en circuits intégrés

Country Status (5)

Country Link
US (1) US3546682A (fr)
CH (1) CH465013A (fr)
FR (1) FR1482050A (fr)
GB (1) GB1182296A (fr)
NL (1) NL6703613A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818462A (en) * 1973-06-04 1974-06-18 Sprague Electric Co Noise immune i.c. memory cell
DE2430784B2 (de) * 1974-06-26 1977-02-10 Siemens AG, 1000 Berlin und 8000 München Bipolarer halbleiterspeicher
US4622475A (en) * 1984-03-05 1986-11-11 Tektronix, Inc. Data storage element having input and output ports isolated from regenerative circuit
DE3483265D1 (de) * 1984-06-25 1990-10-25 Ibm Mtl-speicherzelle mit inhaerenter mehrfachfaehigkeit.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177373A (en) * 1960-10-28 1965-04-06 Richard H Graham Transistorized loading circuit
US3177374A (en) * 1961-03-10 1965-04-06 Philco Corp Binary data transfer circuit
US3417265A (en) * 1962-11-08 1968-12-17 Burroughs Corp Memory system
US3364362A (en) * 1963-10-07 1968-01-16 Bunker Ramo Memory selection system

Also Published As

Publication number Publication date
US3546682A (en) 1970-12-08
NL6703613A (fr) 1967-09-11
GB1182296A (en) 1970-02-25
FR1482050A (fr) 1967-05-26

Similar Documents

Publication Publication Date Title
FR1497338A (fr) Mémoire
FR1499444A (fr) Matrice de circuits logiques intégrés
FR1482050A (fr) Mémoire matricielle en circuits intégrés
FR1501433A (fr) Mémoire cryoélectrique
CH520983A (fr) Mémoire
NL152118B (nl) Halfgeleider-leesgeheugenmatrix.
FR1506617A (fr) Mémoire matricielle équilibrée du type bit-lecture
FR1533269A (fr) Mémoire matricielle de lecture en matériau semi-conducteur
FR1538799A (fr) Mémoire à recirculation
FR1538099A (fr) Circuit de mémoire
FR1521764A (fr) Dispositif à mémoire
AT307774B (de) Halbleitervorrichtung, insbesondere Speicherschaltung
FR1506072A (fr) Mémoire magnétique
FR1485074A (fr) Mémoire magnétique
FR1523942A (fr) Mémoire électronique
CH458446A (fr) Mémoire magnétique
FR1523641A (fr) Circuit de mémoire magnétique
FR1486472A (fr) Mémoire capacitive
FR1535382A (fr) Matrice de mémoire magnétique
FR1547106A (fr) Matrice de mémoire
FR1541562A (fr) Mémoire magnétique
FR1537999A (fr) Mémoire magnétique
FR1536886A (fr) Mémoire magnétique
FR1544933A (fr) Mémoire magnétique
FR1504961A (fr) Mémoire