CH484699A - Verfahren zum Herstellen von epitaktischen Aufwachsschichten aus binären halbleitenden Verbindungen - Google Patents

Verfahren zum Herstellen von epitaktischen Aufwachsschichten aus binären halbleitenden Verbindungen

Info

Publication number
CH484699A
CH484699A CH966666A CH966666A CH484699A CH 484699 A CH484699 A CH 484699A CH 966666 A CH966666 A CH 966666A CH 966666 A CH966666 A CH 966666A CH 484699 A CH484699 A CH 484699A
Authority
CH
Switzerland
Prior art keywords
production
epitaxial growth
growth layers
semiconducting compounds
binary
Prior art date
Application number
CH966666A
Other languages
English (en)
Inventor
Dersin Hansjuergen D Dipl-Chem
Lochner Horst-Paul
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH484699A publication Critical patent/CH484699A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/052—Face to face deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/17—Vapor-liquid-solid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH966666A 1965-07-05 1966-07-04 Verfahren zum Herstellen von epitaktischen Aufwachsschichten aus binären halbleitenden Verbindungen CH484699A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0097994 1965-07-05

Publications (1)

Publication Number Publication Date
CH484699A true CH484699A (de) 1970-01-31

Family

ID=7521148

Family Applications (1)

Application Number Title Priority Date Filing Date
CH966666A CH484699A (de) 1965-07-05 1966-07-04 Verfahren zum Herstellen von epitaktischen Aufwachsschichten aus binären halbleitenden Verbindungen

Country Status (6)

Country Link
US (1) US3480472A (de)
AT (1) AT262382B (de)
CH (1) CH484699A (de)
DE (1) DE1544265A1 (de)
GB (1) GB1102205A (de)
NL (1) NL6609148A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636919A (en) * 1969-12-02 1972-01-25 Univ Ohio State Apparatus for growing films
US4404265A (en) * 1969-10-01 1983-09-13 Rockwell International Corporation Epitaxial composite and method of making
US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
US5091044A (en) * 1988-07-21 1992-02-25 Mitsubishi Denki Kabushiki Kaisha Methods of substrate heating for vapor phase epitaxial growth

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3008805A (en) * 1959-06-09 1961-11-14 Gen Electric Preparation of metal phosphides
NL252729A (de) * 1959-06-18
DE1188555B (de) * 1960-05-10 1965-03-11 Wacker Chemie Gmbh Verfahren zur Herstellung hochreiner kristalliner Koerper aus Nitriden, Phosphiden oder Arseniden der III. Hauptgruppe des Periodensystems

Also Published As

Publication number Publication date
NL6609148A (de) 1967-01-06
DE1544265A1 (de) 1970-07-09
GB1102205A (en) 1968-02-07
US3480472A (en) 1969-11-25
AT262382B (de) 1968-06-10

Similar Documents

Publication Publication Date Title
CH541989A (de) Verfahren und Vorrichtung zum Herstellen von Einkristallstäben aus halbleitenden Verbindungen
AT261675B (de) Verfahren zum epitaktischen Aufwachsen von Halbleitereinkristallen
CH475367A (de) Verfahren zum Herstellen von dünnen Schichten aus texturlosem, polykristallinem Silicium
CH506187A (de) Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial
CH498493A (de) Verfahren zum Herstellen monolithischer Halbleiteranordnungen
CH478731A (de) Verfahren zur Herstellung von aromatischen Verbindungen
AT266219B (de) Verfahren zur Herstellung von Halbleiteranordnungen
AT317316B (de) Verfahren zum Herstellen von III - V - Halbleitereinkristallen für elektrolumineszierende Halbleiterbauelemente
CH482773A (de) Verfahren zum Stabilisieren von organischen Stoffen
AT310252B (de) Verfahren zum Herstellen eines Magnesium-Aluminium-Spinellsubstrates zum epitaktischen Abscheiden von Halbleitermaterialschichten
AT262947B (de) Verfahren zur Herstellung neuer, die Oberflächenspannung herabsetzender anionaktiver Verbindungen
AT262382B (de) Verfahren zum Herstellen von epitaktischen Aufwachsschichten aus binären, halbleitenden Verbindungen
CH521025A (de) Verfahren zum Herstellen epitaktischer Aufwachsschichten aus am Schmelzpunkt leicht zersetzlichen halbleitenden Verbindungen durch Schmelzepitaxie
AT287654B (de) Verfahren zur Herstellung von Einlagerungsverbindungen aus anorganischen Trägerstoffen und organischen Verbindungen
AT254947B (de) Verfahren zum Serienfertigen von Halbleiterbauelementen
AT279157B (de) Verfahren zum Herstellen von Polymerisaten aus α-Olefinen
CH433191A (de) Verfahren zum Herstellen von einkristallinem Halbleitermaterial
AT287670B (de) Verfahren zur elektrotischen Herstellung von Hydrodimeren olefinischer Verbindungen
AT261679B (de) Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden Verbindungen
CH497274A (de) Verfahren zum Herstellen von Formlingen aus Schaumstoffen
CH457425A (de) Verfahren zur Herstellung von organischen Borverbindungen
AT244078B (de) Verfahren zum Herstellen von Magnetogrammträgern
CH421060A (de) Verfahren zum Herstellen von streifenfreien Festkörpern
AT262339B (de) Verfahren zur Herstellung zusammengesetzten Düngemitteln
AT259019B (de) Verfahren zum Herstellen von gleichmäßigen epitaktischen Aufwachsschichten

Legal Events

Date Code Title Description
PL Patent ceased