CH486121A - Verfahren zum Herstellen von homogenen Oxidschichten auf Halbleiterkristallen - Google Patents
Verfahren zum Herstellen von homogenen Oxidschichten auf HalbleiterkristallenInfo
- Publication number
- CH486121A CH486121A CH966566A CH966566A CH486121A CH 486121 A CH486121 A CH 486121A CH 966566 A CH966566 A CH 966566A CH 966566 A CH966566 A CH 966566A CH 486121 A CH486121 A CH 486121A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- oxide layers
- semiconductor crystals
- homogeneous oxide
- homogeneous
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6504—In-situ cleaning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/903—Catalyst aided deposition
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES97992A DE1286872B (de) | 1965-07-05 | 1965-07-05 | Verfahren zum Herstellen von homogenen Oxidschichten auf Halbleiterkristallen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH486121A true CH486121A (de) | 1970-02-15 |
Family
ID=7521145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH966566A CH486121A (de) | 1965-07-05 | 1966-07-04 | Verfahren zum Herstellen von homogenen Oxidschichten auf Halbleiterkristallen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3518115A (de) |
| AT (1) | AT261003B (de) |
| CH (1) | CH486121A (de) |
| DE (1) | DE1286872B (de) |
| GB (1) | GB1106596A (de) |
| NL (1) | NL6608970A (de) |
| SE (1) | SE309968B (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5137147B2 (de) * | 1971-08-20 | 1976-10-14 | ||
| US3984587A (en) * | 1973-07-23 | 1976-10-05 | Rca Corporation | Chemical vapor deposition of luminescent films |
| JPS5559729A (en) * | 1978-10-27 | 1980-05-06 | Fujitsu Ltd | Forming method of semiconductor surface insulating film |
| US4214919A (en) * | 1978-12-28 | 1980-07-29 | Burroughs Corporation | Technique of growing thin silicon oxide films utilizing argon in the contact gas |
| US4207138A (en) * | 1979-01-17 | 1980-06-10 | Rca Corporation | Mercury vapor leaching from microelectronic substrates |
| JPS56161646A (en) * | 1980-05-19 | 1981-12-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4376796A (en) * | 1981-10-27 | 1983-03-15 | Thermco Products Corporation | Processing silicon wafers employing processing gas atmospheres of similar molecular weight |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2543710A (en) * | 1948-01-15 | 1951-02-27 | Westinghouse Electric Corp | Process for producing insulating iron oxide coatings |
| US2930722A (en) * | 1959-02-03 | 1960-03-29 | Bell Telephone Labor Inc | Method of treating silicon |
| US3331716A (en) * | 1962-06-04 | 1967-07-18 | Philips Corp | Method of manufacturing a semiconductor device by vapor-deposition |
| US3258359A (en) * | 1963-04-08 | 1966-06-28 | Siliconix Inc | Semiconductor etch and oxidation process |
-
1965
- 1965-07-05 DE DES97992A patent/DE1286872B/de active Pending
-
1966
- 1966-06-28 NL NL6608970A patent/NL6608970A/xx unknown
- 1966-06-30 US US562003A patent/US3518115A/en not_active Expired - Lifetime
- 1966-07-04 CH CH966566A patent/CH486121A/de not_active IP Right Cessation
- 1966-07-04 SE SE9110/66A patent/SE309968B/xx unknown
- 1966-07-04 AT AT637366A patent/AT261003B/de active
- 1966-07-04 GB GB29852/66A patent/GB1106596A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE309968B (de) | 1969-04-14 |
| US3518115A (en) | 1970-06-30 |
| DE1286872B (de) | 1969-01-09 |
| NL6608970A (de) | 1967-01-06 |
| AT261003B (de) | 1968-04-10 |
| GB1106596A (en) | 1968-03-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |