Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D18/00—Thyristors
  • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D18/00—Thyristors
  • H10D18/80—Bidirectional devices, e.g. triacs 
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
  • H10D84/131—Thyristors having built-in components
  • H10D84/135—Thyristors having built-in components the built-in components being diodes

Applications Claiming Priority (2)

Publications (1)

Family

ID=26263142

Family Applications (2)

Family Applications After (1)

Country Status (7)

Families Citing this family (12)

Family Cites Families (4)

• 1967
  • 1967-08-09 GB GB36515/67A patent/GB1193465A/en not_active Expired
  • 1967-08-09 GB GB36514/67A patent/GB1194427A/en not_active Expired
• 1968
  • 1968-07-25 US US754134*A patent/US3586928A/en not_active Expired - Lifetime
  • 1968-07-25 US US747654A patent/US3508127A/en not_active Expired - Lifetime
  • 1968-08-06 NL NL6811176A patent/NL6811176A/xx unknown
  • 1968-08-07 DE DE19681764794 patent/DE1764794A1/de active Pending
  • 1968-08-07 CH CH1184068A patent/CH489915A/de not_active IP Right Cessation
  • 1968-08-07 CH CH1183968A patent/CH491501A/de not_active IP Right Cessation
  • 1968-08-08 NL NL6811253A patent/NL6811253A/xx unknown
  • 1968-08-08 BE BE719238D patent/BE719238A/xx unknown
  • 1968-08-09 FR FR1584128D patent/FR1584128A/fr not_active Expired
  • 1968-08-09 FR FR1578386D patent/FR1578386A/fr not_active Expired
  • 1968-08-09 BE BE719310D patent/BE719310A/xx unknown

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