CH497794A - Verfahren zum Herstellen einer Halbleitervorrichtung mit dünnen, aus Halbleitermaterial bestehenden Schichten - Google Patents
Verfahren zum Herstellen einer Halbleitervorrichtung mit dünnen, aus Halbleitermaterial bestehenden SchichtenInfo
- Publication number
- CH497794A CH497794A CH1912168A CH1912168A CH497794A CH 497794 A CH497794 A CH 497794A CH 1912168 A CH1912168 A CH 1912168A CH 1912168 A CH1912168 A CH 1912168A CH 497794 A CH497794 A CH 497794A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacturing
- thin layers
- semiconductor device
- semiconductor material
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19671614696 DE1614696A1 (de) | 1967-12-27 | 1967-12-27 | Verfahren zum Herstellen duenner,vorzugsweise aus Halbleitermaterial bestehender Schichten fuer elektrische Bauelemente |
| DES0113509 | 1967-12-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH497794A true CH497794A (de) | 1970-10-15 |
Family
ID=25753712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1912168A CH497794A (de) | 1967-12-27 | 1968-12-23 | Verfahren zum Herstellen einer Halbleitervorrichtung mit dünnen, aus Halbleitermaterial bestehenden Schichten |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH497794A (de) |
| DE (1) | DE1614696A1 (de) |
| FR (1) | FR1597834A (de) |
| GB (1) | GB1202790A (de) |
| NL (1) | NL6815484A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2042240A1 (de) * | 1970-08-26 | 1972-03-02 | Siemens Ag | Feldeffekt-Halbleiterbauelement |
-
1967
- 1967-12-27 DE DE19671614696 patent/DE1614696A1/de active Pending
-
1968
- 1968-10-30 NL NL6815484A patent/NL6815484A/xx unknown
- 1968-12-13 FR FR1597834D patent/FR1597834A/fr not_active Expired
- 1968-12-23 CH CH1912168A patent/CH497794A/de not_active IP Right Cessation
- 1968-12-23 GB GB61024/68A patent/GB1202790A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1597834A (de) | 1970-06-29 |
| GB1202790A (en) | 1970-08-19 |
| DE1614696A1 (de) | 1970-07-02 |
| NL6815484A (de) | 1969-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |