CH497794A - Verfahren zum Herstellen einer Halbleitervorrichtung mit dünnen, aus Halbleitermaterial bestehenden Schichten - Google Patents

Verfahren zum Herstellen einer Halbleitervorrichtung mit dünnen, aus Halbleitermaterial bestehenden Schichten

Info

Publication number
CH497794A
CH497794A CH1912168A CH1912168A CH497794A CH 497794 A CH497794 A CH 497794A CH 1912168 A CH1912168 A CH 1912168A CH 1912168 A CH1912168 A CH 1912168A CH 497794 A CH497794 A CH 497794A
Authority
CH
Switzerland
Prior art keywords
manufacturing
thin layers
semiconductor device
semiconductor material
semiconductor
Prior art date
Application number
CH1912168A
Other languages
English (en)
Inventor
Manfred Dr Zerbst
Erhard Dr Sirtl
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH497794A publication Critical patent/CH497794A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0123Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
CH1912168A 1967-12-27 1968-12-23 Verfahren zum Herstellen einer Halbleitervorrichtung mit dünnen, aus Halbleitermaterial bestehenden Schichten CH497794A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19671614696 DE1614696A1 (de) 1967-12-27 1967-12-27 Verfahren zum Herstellen duenner,vorzugsweise aus Halbleitermaterial bestehender Schichten fuer elektrische Bauelemente
DES0113509 1967-12-27

Publications (1)

Publication Number Publication Date
CH497794A true CH497794A (de) 1970-10-15

Family

ID=25753712

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1912168A CH497794A (de) 1967-12-27 1968-12-23 Verfahren zum Herstellen einer Halbleitervorrichtung mit dünnen, aus Halbleitermaterial bestehenden Schichten

Country Status (5)

Country Link
CH (1) CH497794A (de)
DE (1) DE1614696A1 (de)
FR (1) FR1597834A (de)
GB (1) GB1202790A (de)
NL (1) NL6815484A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2042240A1 (de) * 1970-08-26 1972-03-02 Siemens Ag Feldeffekt-Halbleiterbauelement

Also Published As

Publication number Publication date
FR1597834A (de) 1970-06-29
GB1202790A (en) 1970-08-19
DE1614696A1 (de) 1970-07-02
NL6815484A (de) 1969-07-01

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Legal Events

Date Code Title Description
PL Patent ceased