CH502702A - Semiconductor injection laser - Google Patents
Semiconductor injection laserInfo
- Publication number
- CH502702A CH502702A CH1526869A CH1526869A CH502702A CH 502702 A CH502702 A CH 502702A CH 1526869 A CH1526869 A CH 1526869A CH 1526869 A CH1526869 A CH 1526869A CH 502702 A CH502702 A CH 502702A
- Authority
- CH
- Switzerland
- Prior art keywords
- injection laser
- semiconductor injection
- semiconductor
- laser
- injection
- Prior art date
Links
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76690268A | 1968-10-11 | 1968-10-11 | |
| US78745968A | 1968-12-27 | 1968-12-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH502702A true CH502702A (en) | 1971-01-31 |
Family
ID=27117815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1526869A CH502702A (en) | 1968-10-11 | 1969-10-10 | Semiconductor injection laser |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4947316B1 (en) |
| BE (1) | BE739896A (en) |
| CH (1) | CH502702A (en) |
| DE (1) | DE1949575B2 (en) |
| FR (1) | FR2020380A1 (en) |
| GB (1) | GB1288082A (en) |
| NL (1) | NL159828B (en) |
| SE (1) | SE374850B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3043581A1 (en) * | 1980-11-19 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Semiconductor devices, esp. opto-electronic components - where metal layer with high work function forms enhancement zone in semiconductor, esp. for laser diodes or Leds |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
| DE2042517A1 (en) * | 1970-08-27 | 1972-03-02 | Pilkuhn M | Semiconductor laser |
| CN119765014B (en) * | 2024-12-13 | 2025-10-17 | 中国科学院半导体研究所 | A semiconductor laser and a method for manufacturing the same |
-
1969
- 1969-10-01 SE SE1350769D patent/SE374850B/xx unknown
- 1969-10-01 DE DE19691949575 patent/DE1949575B2/en not_active Ceased
- 1969-10-06 BE BE739896D patent/BE739896A/xx not_active IP Right Cessation
- 1969-10-07 FR FR6934184A patent/FR2020380A1/fr active Pending
- 1969-10-10 GB GB1288082D patent/GB1288082A/en not_active Expired
- 1969-10-10 CH CH1526869A patent/CH502702A/en not_active IP Right Cessation
- 1969-10-10 NL NL6915370A patent/NL159828B/en not_active IP Right Cessation
- 1969-10-11 JP JP8074669A patent/JPS4947316B1/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3043581A1 (en) * | 1980-11-19 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Semiconductor devices, esp. opto-electronic components - where metal layer with high work function forms enhancement zone in semiconductor, esp. for laser diodes or Leds |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1949575B2 (en) | 1980-03-27 |
| FR2020380A1 (en) | 1970-07-10 |
| JPS4947316B1 (en) | 1974-12-14 |
| DE1949575A1 (en) | 1970-04-23 |
| SE374850B (en) | 1975-03-17 |
| BE739896A (en) | 1970-03-16 |
| NL159828B (en) | 1979-03-15 |
| NL6915370A (en) | 1970-04-14 |
| GB1288082A (en) | 1972-09-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |