CH514234A - Verfahren zur Herstellung einer Halbleitervorrichtung, die ein Halbleitermaterial des Typs AIIBVI enthält, und nach diesem Verfahren hergestellte Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung, die ein Halbleitermaterial des Typs AIIBVI enthält, und nach diesem Verfahren hergestellte Halbleitervorrichtung

Info

Publication number
CH514234A
CH514234A CH1139167A CH1139167A CH514234A CH 514234 A CH514234 A CH 514234A CH 1139167 A CH1139167 A CH 1139167A CH 1139167 A CH1139167 A CH 1139167A CH 514234 A CH514234 A CH 514234A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
aiibvi
manufacturing
type
semiconductor
Prior art date
Application number
CH1139167A
Other languages
English (en)
Inventor
Koelmans Hein
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH514234A publication Critical patent/CH514234A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/864—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/80—Electrical treatments, e.g. for electroforming
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
CH1139167A 1966-08-17 1967-08-14 Verfahren zur Herstellung einer Halbleitervorrichtung, die ein Halbleitermaterial des Typs AIIBVI enthält, und nach diesem Verfahren hergestellte Halbleitervorrichtung CH514234A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6611536A NL6611536A (de) 1966-08-17 1966-08-17

Publications (1)

Publication Number Publication Date
CH514234A true CH514234A (de) 1971-10-15

Family

ID=19797427

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1139167A CH514234A (de) 1966-08-17 1967-08-14 Verfahren zur Herstellung einer Halbleitervorrichtung, die ein Halbleitermaterial des Typs AIIBVI enthält, und nach diesem Verfahren hergestellte Halbleitervorrichtung

Country Status (11)

Country Link
US (1) US3585071A (de)
JP (1) JPS4615454B1 (de)
AT (1) AT281119B (de)
BE (1) BE702691A (de)
CH (1) CH514234A (de)
DE (1) DE1614271A1 (de)
ES (1) ES344101A1 (de)
FR (1) FR1546615A (de)
GB (1) GB1193715A (de)
NL (1) NL6611536A (de)
SE (1) SE349893B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203785A (en) * 1978-11-30 1980-05-20 Rca Corporation Method of epitaxially depositing cadmium sulfide
DE3028718C2 (de) * 1979-07-31 1982-08-19 Sharp K.K., Osaka Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
US5053845A (en) * 1980-05-23 1991-10-01 Ricoh Company, Ltd. Thin-film device
JP4425878B2 (ja) * 2005-10-31 2010-03-03 韓國電子通信研究院 カルコゲナイド系元素を含む光伝導層を有するフォト薄膜トランジスタ及びこれを用いたイメージセンサの単位セル

Also Published As

Publication number Publication date
SE349893B (de) 1972-10-09
US3585071A (en) 1971-06-15
NL6611536A (de) 1968-02-19
AT281119B (de) 1970-05-11
BE702691A (de) 1968-02-14
JPS4615454B1 (de) 1971-04-26
GB1193715A (en) 1970-06-03
FR1546615A (fr) 1968-11-22
DE1614271A1 (de) 1970-03-26
ES344101A1 (es) 1968-09-16

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Legal Events

Date Code Title Description
PL Patent ceased