CH515618A - Integrierte Schaltung mit einer mindestens zwei Transistoren enthaltenden Halbleiterscheibe - Google Patents

Integrierte Schaltung mit einer mindestens zwei Transistoren enthaltenden Halbleiterscheibe

Info

Publication number
CH515618A
CH515618A CH1298570A CH1298570A CH515618A CH 515618 A CH515618 A CH 515618A CH 1298570 A CH1298570 A CH 1298570A CH 1298570 A CH1298570 A CH 1298570A CH 515618 A CH515618 A CH 515618A
Authority
CH
Switzerland
Prior art keywords
transistors
integrated circuit
semiconductor wafer
wafer containing
semiconductor
Prior art date
Application number
CH1298570A
Other languages
English (en)
Inventor
Reindl Klaus
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH515618A publication Critical patent/CH515618A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
CH1298570A 1969-09-02 1970-08-31 Integrierte Schaltung mit einer mindestens zwei Transistoren enthaltenden Halbleiterscheibe CH515618A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691944543 DE1944543A1 (de) 1969-09-02 1969-09-02 Anordnung zur Kompensation der Basisweite eines Transistors in Murphy-Technik

Publications (1)

Publication Number Publication Date
CH515618A true CH515618A (de) 1971-11-15

Family

ID=5744421

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1298570A CH515618A (de) 1969-09-02 1970-08-31 Integrierte Schaltung mit einer mindestens zwei Transistoren enthaltenden Halbleiterscheibe

Country Status (7)

Country Link
CA (1) CA943263A (de)
CH (1) CH515618A (de)
DE (1) DE1944543A1 (de)
FR (1) FR2060350B1 (de)
GB (1) GB1308494A (de)
NL (1) NL7012343A (de)
SE (1) SE368118B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2456391A1 (en) * 1979-05-10 1980-12-05 Philips Nv Integrated circuit with variable phase shifter - controlled by signal set by semiconductor variable resistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465213A (en) * 1966-06-20 1969-09-02 Frances B Hugle Self-compensating structure for limiting base drive current in transistors

Also Published As

Publication number Publication date
FR2060350B1 (de) 1975-01-10
NL7012343A (de) 1971-03-04
SE368118B (de) 1974-06-17
CA943263A (en) 1974-03-05
FR2060350A1 (de) 1971-06-18
DE1944543A1 (de) 1971-03-11
GB1308494A (en) 1973-02-28

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Legal Events

Date Code Title Description
PL Patent ceased