CH532960A - Reactor for carrying out a process in which a gas stream and at least one substrate are used, and method for operating this reactor - Google Patents

Reactor for carrying out a process in which a gas stream and at least one substrate are used, and method for operating this reactor

Info

Publication number
CH532960A
CH532960A CH336071A CH336071A CH532960A CH 532960 A CH532960 A CH 532960A CH 336071 A CH336071 A CH 336071A CH 336071 A CH336071 A CH 336071A CH 532960 A CH532960 A CH 532960A
Authority
CH
Switzerland
Prior art keywords
reactor
substrate
carrying
operating
gas stream
Prior art date
Application number
CH336071A
Other languages
German (de)
Inventor
Cornelis Eversteijn Franciscus
Leonardus Peek Hermanus
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH532960A publication Critical patent/CH532960A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585—Compression of gas before it reaches the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
CH336071A 1970-03-11 1971-03-08 Reactor for carrying out a process in which a gas stream and at least one substrate are used, and method for operating this reactor CH532960A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7003431A NL7003431A (en) 1970-03-11 1970-03-11

Publications (1)

Publication Number Publication Date
CH532960A true CH532960A (en) 1973-01-31

Family

ID=19809548

Family Applications (1)

Application Number Title Priority Date Filing Date
CH336071A CH532960A (en) 1970-03-11 1971-03-08 Reactor for carrying out a process in which a gas stream and at least one substrate are used, and method for operating this reactor

Country Status (11)

Country Link
US (1) US3750620A (en)
JP (1) JPS5317862B1 (en)
AT (1) AT321994B (en)
BE (1) BE764013A (en)
CA (1) CA923635A (en)
CH (1) CH532960A (en)
DE (1) DE2110289C3 (en)
FR (1) FR2084428A5 (en)
GB (1) GB1346938A (en)
NL (1) NL7003431A (en)
SE (1) SE368724B (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
GB1524326A (en) * 1976-04-13 1978-09-13 Bfg Glassgroup Coating of glass
JPS5942970B2 (en) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 Reaction tube for semiconductor heat treatment
JPS5944771B2 (en) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 Semiconductor heat treatment furnace
JPS5923464B2 (en) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 Semiconductor heat treatment equipment
US4325319A (en) * 1980-01-18 1982-04-20 Caterpillar Tractor Co. Air flow system for the charging conductor in an electrostatic painting system
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
FR2612946B1 (en) * 1987-03-27 1993-02-19 Chimie Metal PROCESS AND PLANT FOR CHEMICAL DEPOSITION OF MODERATE TEMPERATURE ULTRADOR COATINGS
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
DE3721636A1 (en) * 1987-06-30 1989-01-12 Aixtron Gmbh QUARTZ GLASS REACTOR FOR MOCVD SYSTEMS
JP2745316B2 (en) * 1988-06-22 1998-04-28 アドバンスド セミコンダクター マテリアルス アメリカ、インコーポレイテッド Gas injection device for chemical vapor deposition reactor
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
JP3068075B2 (en) * 1998-01-17 2000-07-24 ハンベック コーポレイション Horizontal reactor for compound semiconductor production
SE9801190D0 (en) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapor Deposition
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6626997B2 (en) 2001-05-17 2003-09-30 Nathan P. Shapiro Continuous processing chamber
JP4192148B2 (en) * 2002-06-10 2008-12-03 東京エレクトロン株式会社 Atomic layer deposition processing equipment
US8124170B1 (en) * 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
WO2005124859A2 (en) * 2004-06-10 2005-12-29 Avansys, Inc. Methods and apparatuses for depositing uniform layers
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP4466723B2 (en) * 2007-11-21 2010-05-26 住友電気工業株式会社 Metalorganic vapor phase epitaxy system
US8628616B2 (en) * 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
JP5954202B2 (en) * 2013-01-29 2016-07-20 東京エレクトロン株式会社 Deposition equipment
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484311A (en) * 1966-06-21 1969-12-16 Union Carbide Corp Silicon deposition process
US3367304A (en) * 1967-03-13 1968-02-06 Dow Corning Deposition chamber for manufacture of refractory coated filaments
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors

Also Published As

Publication number Publication date
DE2110289A1 (en) 1971-09-23
DE2110289C3 (en) 1980-10-30
SE368724B (en) 1974-07-15
FR2084428A5 (en) 1971-12-17
CA923635A (en) 1973-03-27
BE764013A (en) 1971-09-09
GB1346938A (en) 1974-02-13
AT321994B (en) 1975-04-25
DE2110289B2 (en) 1980-03-13
JPS5317862B1 (en) 1978-06-12
NL7003431A (en) 1971-09-14
US3750620A (en) 1973-08-07

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Legal Events

Date Code Title Description
PL Patent ceased