CH554946A - Verfahren zum herabsetzen oder vollstaendigen unterdruecken von auf der oberflaeche von metallischen duennschichten bei zyklischen waermeeinwirkungen waehrend der herstellung entstehenden warzenartigen defekten. - Google Patents
Verfahren zum herabsetzen oder vollstaendigen unterdruecken von auf der oberflaeche von metallischen duennschichten bei zyklischen waermeeinwirkungen waehrend der herstellung entstehenden warzenartigen defekten.Info
- Publication number
- CH554946A CH554946A CH1863270A CH1863270A CH554946A CH 554946 A CH554946 A CH 554946A CH 1863270 A CH1863270 A CH 1863270A CH 1863270 A CH1863270 A CH 1863270A CH 554946 A CH554946 A CH 554946A
- Authority
- CH
- Switzerland
- Prior art keywords
- tart
- defects
- reducing
- metallic layers
- thin metallic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/06—Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/412—Deposition of metallic or metal-silicide materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
- H10W20/4405—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H10W20/4407—Aluminium alloys
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US88910069A | 1969-12-30 | 1969-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH554946A true CH554946A (de) | 1974-10-15 |
Family
ID=25394503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1863270A CH554946A (de) | 1969-12-30 | 1970-12-16 | Verfahren zum herabsetzen oder vollstaendigen unterdruecken von auf der oberflaeche von metallischen duennschichten bei zyklischen waermeeinwirkungen waehrend der herstellung entstehenden warzenartigen defekten. |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS499019B1 (fr) |
| BE (1) | BE761083A (fr) |
| CH (1) | CH554946A (fr) |
| DE (1) | DE2060476C2 (fr) |
| FR (1) | FR2072112B1 (fr) |
| GB (1) | GB1338566A (fr) |
| NL (1) | NL7017660A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3961358A (en) * | 1973-02-21 | 1976-06-01 | Rca Corporation | Leakage current prevention in semiconductor integrated circuit devices |
| CN111684103B (zh) * | 2018-02-05 | 2024-04-16 | 应用材料公司 | 用于沉积蒸发材料的沉积设备及其方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3382568A (en) * | 1965-07-22 | 1968-05-14 | Ibm | Method for providing electrical connections to semiconductor devices |
-
1970
- 1970-11-26 FR FR7043240A patent/FR2072112B1/fr not_active Expired
- 1970-12-03 NL NL7017660A patent/NL7017660A/xx not_active Application Discontinuation
- 1970-12-03 GB GB5738470A patent/GB1338566A/en not_active Expired
- 1970-12-09 DE DE2060476A patent/DE2060476C2/de not_active Expired
- 1970-12-16 CH CH1863270A patent/CH554946A/xx not_active IP Right Cessation
- 1970-12-17 JP JP45112601A patent/JPS499019B1/ja active Pending
- 1970-12-30 BE BE761083A patent/BE761083A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2072112A1 (fr) | 1971-09-24 |
| DE2060476A1 (de) | 1971-07-22 |
| GB1338566A (en) | 1973-11-28 |
| FR2072112B1 (fr) | 1973-12-07 |
| BE761083A (fr) | 1971-05-27 |
| NL7017660A (fr) | 1971-07-02 |
| JPS499019B1 (fr) | 1974-03-01 |
| DE2060476C2 (de) | 1983-03-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |