CH554946A - Verfahren zum herabsetzen oder vollstaendigen unterdruecken von auf der oberflaeche von metallischen duennschichten bei zyklischen waermeeinwirkungen waehrend der herstellung entstehenden warzenartigen defekten. - Google Patents

Verfahren zum herabsetzen oder vollstaendigen unterdruecken von auf der oberflaeche von metallischen duennschichten bei zyklischen waermeeinwirkungen waehrend der herstellung entstehenden warzenartigen defekten.

Info

Publication number
CH554946A
CH554946A CH1863270A CH1863270A CH554946A CH 554946 A CH554946 A CH 554946A CH 1863270 A CH1863270 A CH 1863270A CH 1863270 A CH1863270 A CH 1863270A CH 554946 A CH554946 A CH 554946A
Authority
CH
Switzerland
Prior art keywords
tart
defects
reducing
metallic layers
thin metallic
Prior art date
Application number
CH1863270A
Other languages
German (de)
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH554946A publication Critical patent/CH554946A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/06Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/08Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/10Junction-based devices
    • H10N60/12Josephson-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412Deposition of metallic or metal-silicide materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44Conductive materials thereof
    • H10W20/4403Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44Conductive materials thereof
    • H10W20/4403Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4405Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H10W20/4407Aluminium alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CH1863270A 1969-12-30 1970-12-16 Verfahren zum herabsetzen oder vollstaendigen unterdruecken von auf der oberflaeche von metallischen duennschichten bei zyklischen waermeeinwirkungen waehrend der herstellung entstehenden warzenartigen defekten. CH554946A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88910069A 1969-12-30 1969-12-30

Publications (1)

Publication Number Publication Date
CH554946A true CH554946A (de) 1974-10-15

Family

ID=25394503

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1863270A CH554946A (de) 1969-12-30 1970-12-16 Verfahren zum herabsetzen oder vollstaendigen unterdruecken von auf der oberflaeche von metallischen duennschichten bei zyklischen waermeeinwirkungen waehrend der herstellung entstehenden warzenartigen defekten.

Country Status (7)

Country Link
JP (1) JPS499019B1 (fr)
BE (1) BE761083A (fr)
CH (1) CH554946A (fr)
DE (1) DE2060476C2 (fr)
FR (1) FR2072112B1 (fr)
GB (1) GB1338566A (fr)
NL (1) NL7017660A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961358A (en) * 1973-02-21 1976-06-01 Rca Corporation Leakage current prevention in semiconductor integrated circuit devices
CN111684103B (zh) * 2018-02-05 2024-04-16 应用材料公司 用于沉积蒸发材料的沉积设备及其方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices

Also Published As

Publication number Publication date
FR2072112A1 (fr) 1971-09-24
DE2060476A1 (de) 1971-07-22
GB1338566A (en) 1973-11-28
FR2072112B1 (fr) 1973-12-07
BE761083A (fr) 1971-05-27
NL7017660A (fr) 1971-07-02
JPS499019B1 (fr) 1974-03-01
DE2060476C2 (de) 1983-03-31

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Legal Events

Date Code Title Description
PL Patent ceased