CH557199A - DEVICE FOR CRUCIBLE-FREE ZONE MELTING OF A SEMICONDUCTOR ROD. - Google Patents

DEVICE FOR CRUCIBLE-FREE ZONE MELTING OF A SEMICONDUCTOR ROD.

Info

Publication number
CH557199A
CH557199A CH393570A CH393570A CH557199A CH 557199 A CH557199 A CH 557199A CH 393570 A CH393570 A CH 393570A CH 393570 A CH393570 A CH 393570A CH 557199 A CH557199 A CH 557199A
Authority
CH
Switzerland
Prior art keywords
crucible
free zone
zone melting
semiconductor rod
semiconductor
Prior art date
Application number
CH393570A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH557199A publication Critical patent/CH557199A/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/06—Control, e.g. of temperature, of power
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • General Induction Heating (AREA)
CH393570A 1969-03-19 1970-03-17 DEVICE FOR CRUCIBLE-FREE ZONE MELTING OF A SEMICONDUCTOR ROD. CH557199A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691913881 DE1913881B2 (en) 1969-03-19 1969-03-19 Device for crucible-free zone melting

Publications (1)

Publication Number Publication Date
CH557199A true CH557199A (en) 1974-12-31

Family

ID=5728595

Family Applications (1)

Application Number Title Priority Date Filing Date
CH393570A CH557199A (en) 1969-03-19 1970-03-17 DEVICE FOR CRUCIBLE-FREE ZONE MELTING OF A SEMICONDUCTOR ROD.

Country Status (7)

Country Link
US (1) US3644151A (en)
CH (1) CH557199A (en)
DE (1) DE1913881B2 (en)
FR (1) FR2039037A5 (en)
GB (1) GB1256438A (en)
NL (1) NL6918529A (en)
SE (1) SE355957B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2220519C3 (en) * 1972-04-26 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Process for crucible-free zone melting of semiconductor rods
DE2757868A1 (en) * 1976-12-27 1978-07-06 Monsanto Co HF INDUCTION HEATING DEVICE FOR ZONE MELTING OF SEMICONDUCTORS
US4220626A (en) * 1978-04-13 1980-09-02 Monsanto Company RF Induction heating circuits for float zone refining of semiconductor rods
DE3143146A1 (en) * 1981-10-30 1983-05-11 Siemens AG, 1000 Berlin und 8000 München INDUCTION HEATING COIL DESIGNED AS A FLAT COIL FOR POT-FREE ZONE MELTING
DE3226713A1 (en) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München INDUCTION HEATING COIL DESIGNED AS A FLAT COIL FOR POT-FREE ZONE MELTING
DE3229461A1 (en) * 1982-08-06 1984-02-09 Siemens AG, 1000 Berlin und 8000 München DEVICE FOR POT-FREE ZONE MELTING OF A SEMICONDUCTOR STICK, PARTICULARLY MADE OF SILICON
DE3836239A1 (en) * 1988-10-25 1990-04-26 Deutsche Forsch Luft Raumfahrt DEVICE FOR TANKLESS POSITIONING AND MELTING OF ELECTRICALLY CONDUCTIVE MATERIALS
JP2016157567A (en) * 2015-02-24 2016-09-01 高周波熱錬株式会社 Heating device and heating coil

Also Published As

Publication number Publication date
FR2039037A5 (en) 1971-01-08
GB1256438A (en) 1971-12-08
DE1913881A1 (en) 1970-10-22
SE355957B (en) 1973-05-14
NL6918529A (en) 1970-09-22
US3644151A (en) 1972-02-22
DE1913881B2 (en) 1970-10-22

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Legal Events

Date Code Title Description
PL Patent ceased