CH558428A - Target-wechselvorrichtung fuer die zerstaeubung mittels ionen. - Google Patents

Target-wechselvorrichtung fuer die zerstaeubung mittels ionen.

Info

Publication number
CH558428A
CH558428A CH1720272A CH1720272A CH558428A CH 558428 A CH558428 A CH 558428A CH 1720272 A CH1720272 A CH 1720272A CH 1720272 A CH1720272 A CH 1720272A CH 558428 A CH558428 A CH 558428A
Authority
CH
Switzerland
Prior art keywords
spraying
ion
changing device
target changing
target
Prior art date
Application number
CH1720272A
Other languages
English (en)
Original Assignee
Balzers Patent Beteilig Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers Patent Beteilig Ag filed Critical Balzers Patent Beteilig Ag
Priority to CH1720272A priority Critical patent/CH558428A/de
Priority to DE2301593A priority patent/DE2301593C3/de
Priority to GB555673A priority patent/GB1394942A/en
Priority to NL7302495.A priority patent/NL161507B/xx
Priority to FR7309037A priority patent/FR2208185B1/fr
Priority to US00348018A priority patent/US3853740A/en
Publication of CH558428A publication Critical patent/CH558428A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7622—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CH1720272A 1972-11-23 1972-11-23 Target-wechselvorrichtung fuer die zerstaeubung mittels ionen. CH558428A (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CH1720272A CH558428A (de) 1972-11-23 1972-11-23 Target-wechselvorrichtung fuer die zerstaeubung mittels ionen.
DE2301593A DE2301593C3 (de) 1972-11-23 1973-01-13 Wechselvorrichtung für Targets für Kathodenzerstäubung
GB555673A GB1394942A (en) 1972-11-23 1973-02-05 Target changing device for sputtering by means of ions
NL7302495.A NL161507B (nl) 1972-11-23 1973-02-22 Inrichting voor het verwisselen van doelen voor het verstuiven met behulp van ionen.
FR7309037A FR2208185B1 (de) 1972-11-23 1973-03-14
US00348018A US3853740A (en) 1972-11-23 1973-04-05 Target changer for sputtering by ionic bombardment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1720272A CH558428A (de) 1972-11-23 1972-11-23 Target-wechselvorrichtung fuer die zerstaeubung mittels ionen.

Publications (1)

Publication Number Publication Date
CH558428A true CH558428A (de) 1975-01-31

Family

ID=4423556

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1720272A CH558428A (de) 1972-11-23 1972-11-23 Target-wechselvorrichtung fuer die zerstaeubung mittels ionen.

Country Status (4)

Country Link
US (1) US3853740A (de)
CH (1) CH558428A (de)
FR (1) FR2208185B1 (de)
GB (1) GB1394942A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169031A (en) * 1978-01-13 1979-09-25 Polyohm, Inc. Magnetron sputter cathode assembly
US4282924A (en) * 1979-03-16 1981-08-11 Varian Associates, Inc. Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface
US4239611A (en) * 1979-06-11 1980-12-16 Vac-Tec Systems, Inc. Magnetron sputtering devices
US4574733A (en) * 1982-09-16 1986-03-11 Energy Conversion Devices, Inc. Substrate shield for preventing the deposition of nonhomogeneous films
US4816133A (en) * 1987-05-14 1989-03-28 Northrop Corporation Apparatus for preparing thin film optical coatings on substrates
GB2213838A (en) * 1987-12-23 1989-08-23 Plessey Co Plc Environmental protection of superconducting thin films
GB2228948A (en) * 1989-02-28 1990-09-12 British Aerospace Fabrication of thin films from a composite target
JPH0733576B2 (ja) * 1989-11-29 1995-04-12 株式会社日立製作所 スパツタ装置、及びターゲツト交換装置、並びにその交換方法
DE4040856A1 (de) 1990-12-20 1992-06-25 Leybold Ag Zerstaeubungsanlage
DE19543375A1 (de) * 1995-11-21 1997-05-22 Leybold Ag Vorrichtung zum Beschichten von Substraten mittels Magnetronzerstäuben
US6051113A (en) * 1998-04-27 2000-04-18 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing
WO2001055477A1 (fr) * 2000-01-27 2001-08-02 Nikon Corporation Procede de fabrication d'un film de materiau composite renfermant un element generateur de gaz
SG90171A1 (en) * 2000-09-26 2002-07-23 Inst Data Storage Sputtering device
US6635154B2 (en) * 2001-11-03 2003-10-21 Intevac, Inc. Method and apparatus for multi-target sputtering
GB0404436D0 (en) * 2004-02-27 2004-03-31 Nanofilm Technologies Int Continuous arc deposition apparatus and method with multiple available targets

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528906A (en) * 1967-06-05 1970-09-15 Texas Instruments Inc Rf sputtering method and system
US3537973A (en) * 1967-09-15 1970-11-03 Varian Associates Sequential sputtering with movable targets

Also Published As

Publication number Publication date
US3853740A (en) 1974-12-10
FR2208185B1 (de) 1977-02-04
FR2208185A1 (de) 1974-06-21
GB1394942A (en) 1975-05-21

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Legal Events

Date Code Title Description
PL Patent ceased