CH578252A5 - - Google Patents

Info

Publication number
CH578252A5
CH578252A5 CH638575A CH638575A CH578252A5 CH 578252 A5 CH578252 A5 CH 578252A5 CH 638575 A CH638575 A CH 638575A CH 638575 A CH638575 A CH 638575A CH 578252 A5 CH578252 A5 CH 578252A5
Authority
CH
Switzerland
Application number
CH638575A
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH578252A5 publication Critical patent/CH578252A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • H10P95/066—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/105—Masks, metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/131—Reactive ion etching rie

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
CH638575A 1974-06-17 1975-05-16 CH578252A5 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/480,086 US3976524A (en) 1974-06-17 1974-06-17 Planarization of integrated circuit surfaces through selective photoresist masking

Publications (1)

Publication Number Publication Date
CH578252A5 true CH578252A5 (cs) 1976-07-30

Family

ID=23906628

Family Applications (1)

Application Number Title Priority Date Filing Date
CH638575A CH578252A5 (cs) 1974-06-17 1975-05-16

Country Status (13)

Country Link
US (1) US3976524A (cs)
JP (1) JPS516677A (cs)
BR (1) BR7503802A (cs)
CA (1) CA1030666A (cs)
CH (1) CH578252A5 (cs)
DK (1) DK138770B (cs)
ES (1) ES438482A1 (cs)
FR (1) FR2275026A1 (cs)
GB (1) GB1452717A (cs)
IT (1) IT1037479B (cs)
NL (1) NL7507116A (cs)
SE (1) SE397436B (cs)
ZA (1) ZA752593B (cs)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT358072B (de) * 1976-03-29 1980-08-25 Kufstein Schablonentech Gmbh Verfahren zum herstellen einer metallschablone
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
US4070501A (en) * 1976-10-28 1978-01-24 Ibm Corporation Forming self-aligned via holes in thin film interconnection systems
US4069076A (en) * 1976-11-29 1978-01-17 E. I. Du Pont De Nemours And Company Liquid lamination process
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures
JPS5595340A (en) * 1979-01-10 1980-07-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
FR2460037A1 (fr) * 1979-06-22 1981-01-16 Thomson Csf Procede d'auto-alignement de regions differemment dopees d'une structure de semi-conducteur
JPS5642377A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Ultraviolet ray erasable type rewritable read-only memory
US4318751A (en) * 1980-03-13 1982-03-09 International Business Machines Corporation Self-aligned process for providing an improved high performance bipolar transistor
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
US4389281A (en) * 1980-12-16 1983-06-21 International Business Machines Corporation Method of planarizing silicon dioxide in semiconductor devices
US4500373A (en) * 1981-09-29 1985-02-19 Dai Nippon Insatsu Kabushiki Kaisha Process for producing coincidently embossed decorative sheets
US4576900A (en) * 1981-10-09 1986-03-18 Amdahl Corporation Integrated circuit multilevel interconnect system and method
US4396458A (en) * 1981-12-21 1983-08-02 International Business Machines Corporation Method for forming planar metal/insulator structures
US4385975A (en) * 1981-12-30 1983-05-31 International Business Machines Corp. Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate
US4427713A (en) 1983-01-17 1984-01-24 Rca Corporation Planarization technique
US4510173A (en) * 1983-04-25 1985-04-09 Kabushiki Kaisha Toshiba Method for forming flattened film
US4541169A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip
US4662064A (en) * 1985-08-05 1987-05-05 Rca Corporation Method of forming multi-level metallization
US4665007A (en) * 1985-08-19 1987-05-12 International Business Machines Corporation Planarization process for organic filling of deep trenches
US4672023A (en) * 1985-10-21 1987-06-09 Avantek, Inc. Method for planarizing wafers
US4721689A (en) * 1986-08-28 1988-01-26 International Business Machines Corporation Method for simultaneously forming an interconnection level and via studs
JPS6377122A (ja) * 1986-09-19 1988-04-07 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
NL8701717A (nl) * 1987-07-21 1989-02-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een geplanariseerde opbouw.
US4839311A (en) * 1987-08-14 1989-06-13 National Semiconductor Corporation Etch back detection
JP2820187B2 (ja) * 1992-04-16 1998-11-05 三星電子 株式会社 半導体装置の製造方法
US5635428A (en) * 1994-10-25 1997-06-03 Texas Instruments Incorporated Global planarization using a polyimide block
US5872060A (en) * 1995-11-02 1999-02-16 Texas Instruments Incorporated Semiconductor device manufacturing method
US5780346A (en) 1996-12-31 1998-07-14 Intel Corporation N2 O nitrided-oxide trench sidewalls and method of making isolation structure
US6063702A (en) * 1997-01-27 2000-05-16 Chartered Semiconductor Manufacturing, Ltd. Global planarization method for inter level dielectric layers using IDL blocks
US5792707A (en) * 1997-01-27 1998-08-11 Chartered Semiconductor Manufacturing Ltd. Global planarization method for inter level dielectric layers of integrated circuits
US5838055A (en) * 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
US6074951A (en) * 1997-05-29 2000-06-13 International Business Machines Corporation Vapor phase etching of oxide masked by resist or masking material
US5876879A (en) * 1997-05-29 1999-03-02 International Business Machines Corporation Oxide layer patterned by vapor phase etching
US5924623A (en) * 1997-06-30 1999-07-20 Honeywell Inc. Diffusion patterned C4 bump pads
AT410043B (de) * 1997-09-30 2003-01-27 Sez Ag Verfahren zum planarisieren von halbleitersubstraten
TW350099B (en) * 1998-01-26 1999-01-11 United Microelectronics Corp IC microfilm process
US6153480A (en) * 1998-05-08 2000-11-28 Intel Coroporation Advanced trench sidewall oxide for shallow trench technology
US6660618B1 (en) * 1999-08-18 2003-12-09 Advanced Micro Devices, Inc. Reverse mask and oxide layer deposition for reduction of vertical capacitance variation in multi-layer metallization systems
US6660655B2 (en) * 1999-10-12 2003-12-09 Taiwan Semiconductor Manufacturing Company Method and solution for preparing SEM samples for low-K materials
US6869750B2 (en) * 1999-10-28 2005-03-22 Fujitsu Limited Structure and method for forming a multilayered structure
US6882045B2 (en) * 1999-10-28 2005-04-19 Thomas J. Massingill Multi-chip module and method for forming and method for deplating defective capacitors
US6428942B1 (en) * 1999-10-28 2002-08-06 Fujitsu Limited Multilayer circuit structure build up method
JP4513985B2 (ja) * 2001-08-28 2010-07-28 日本電気株式会社 基板処理装置
JP2006261683A (ja) * 2001-08-28 2006-09-28 Nec Kagoshima Ltd 基板処理装置
AU2004271224B2 (en) * 2003-09-09 2009-08-20 Csg Solar Ag Adjustment of masks by re-flow
JP2007505487A (ja) * 2003-09-09 2007-03-08 シーエスジー ソーラー アクチェンゲゼルシャフト 有機樹脂材料に開口部を形成する方法の改良
CN100435358C (zh) * 2003-09-09 2008-11-19 Csg索拉尔有限公司 通过回流调节掩模
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
JP4819016B2 (ja) * 2007-10-01 2011-11-16 ゲットナー・ファンデーション・エルエルシー 液晶表示装置の製造方法
JP5357186B2 (ja) * 2008-01-29 2013-12-04 ブルーワー サイエンス アイ エヌ シー． 多重暗視野露光によるハードマスクのパターン形成のためのオントラックプロセス
JP2009086685A (ja) * 2008-12-24 2009-04-23 Nec Lcd Technologies Ltd 液晶表示装置の製造方法
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography

Family Cites Families (8)

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US2294479A (en) * 1939-11-28 1942-09-01 Du Pont Process for polishing coatings
US3475194A (en) * 1964-10-30 1969-10-28 Schjeldahl Co G T Method of treating polyester films
US3503124A (en) * 1967-02-08 1970-03-31 Frank M Wanlass Method of making a semiconductor device
BE787366A (fr) * 1971-08-09 1973-02-09 Dow Chemical Co Methode de modification de l'etat de surface de matieres plastiques
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist
US3799777A (en) * 1972-06-20 1974-03-26 Westinghouse Electric Corp Micro-miniature electronic components by double rejection
US3804738A (en) * 1973-06-29 1974-04-16 Ibm Partial planarization of electrically insulative films by resputtering
US3868723A (en) * 1973-06-29 1975-02-25 Ibm Integrated circuit structure accommodating via holes

Also Published As

Publication number Publication date
BR7503802A (pt) 1976-07-06
GB1452717A (en) 1976-10-13
DE2525224B2 (de) 1977-01-27
US3976524A (en) 1976-08-24
FR2275026A1 (fr) 1976-01-09
ZA752593B (en) 1976-11-24
JPS5342674B2 (cs) 1978-11-14
SE397436B (sv) 1977-10-31
FR2275026B1 (cs) 1977-07-08
DK138770B (da) 1978-10-23
DK138770C (cs) 1979-04-02
NL7507116A (nl) 1975-12-19
SE7506314L (sv) 1975-12-18
IT1037479B (it) 1979-11-10
AU8058775A (en) 1976-11-04
DK270875A (cs) 1975-12-18
JPS516677A (en) 1976-01-20
DE2525224A1 (de) 1976-01-02
ES438482A1 (es) 1977-02-01
CA1030666A (en) 1978-05-02

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Legal Events

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