CH599074A5 - - Google Patents

Info

Publication number: CH599074A5
Authority: CH; Switzerland
Prior art keywords: conductivity; reversing; mesa; substances; regions
Prior art date: 1973-08-29

Application number

CH1155274A

Other languages

German (de)

English (en)

Inventor

Otto Dr Ackermann

Karl Theo Von Meszoely

Arnold Dr Lenz

Original Assignee

Dynamit Nobel Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-08-29

Filing date

1974-08-23

Publication date

1978-05-12

1973-08-29 Priority claimed from DE2343462A external-priority patent/DE2343462C2/de

1974-08-23 Application filed by Dynamit Nobel Ag filed Critical Dynamit Nobel Ag

1978-05-12 Publication of CH599074A5 publication Critical patent/CH599074A5/de

Links

239000004065 semiconductor Substances 0.000 claims description 24
239000000126 substance Substances 0.000 claims description 17
239000000758 substrate Substances 0.000 claims description 14
239000002800 charge carrier Substances 0.000 claims description 9
230000005669 field effect Effects 0.000 claims description 8
239000000463 material Substances 0.000 claims description 6
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
229920005591 polysilicon Polymers 0.000 claims description 6
239000011810 insulating material Substances 0.000 claims description 4
229910052594 sapphire Inorganic materials 0.000 claims description 4
239000010980 sapphire Substances 0.000 claims description 4
229910052710 silicon Inorganic materials 0.000 claims description 4
239000010703 silicon Substances 0.000 claims description 4
239000012777 electrically insulating material Substances 0.000 claims description 2
230000001419 dependent effect Effects 0.000 claims 2
238000000034 method Methods 0.000 description 13
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
238000004519 manufacturing process Methods 0.000 description 9
239000000377 silicon dioxide Substances 0.000 description 6
235000012239 silicon dioxide Nutrition 0.000 description 6
238000005530 etching Methods 0.000 description 5
239000002019 doping agent Substances 0.000 description 4
229910052751 metal Inorganic materials 0.000 description 4
239000002184 metal Substances 0.000 description 4
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
230000015556 catabolic process Effects 0.000 description 3
238000005468 ion implantation Methods 0.000 description 3
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000011574 phosphorus Substances 0.000 description 2
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000012212 insulator Substances 0.000 description 1
238000005259 measurement Methods 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
239000012811 non-conductive material Substances 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
BJKXQOJKVZYQRF-UHFFFAOYSA-M potassium;propan-1-ol;hydroxide Chemical compound [OH-].[K+].CCCO BJKXQOJKVZYQRF-UHFFFAOYSA-M 0.000 description 1
230000036316 preload Effects 0.000 description 1
230000002028 premature Effects 0.000 description 1
238000000197 pyrolysis Methods 0.000 description 1
229910000077 silane Inorganic materials 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
229910052596 spinel Inorganic materials 0.000 description 1
239000011029 spinel Substances 0.000 description 1
230000006641 stabilisation Effects 0.000 description 1
238000011105 stabilization Methods 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D215/00—Heterocyclic compounds containing quinoline or hydrogenated quinoline ring systems
- C07D215/02—Heterocyclic compounds containing quinoline or hydrogenated quinoline ring systems having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen atoms or carbon atoms directly attached to the ring nitrogen atom
- C07D215/16—Heterocyclic compounds containing quinoline or hydrogenated quinoline ring systems having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen atoms or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D215/48—Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen
- C07D215/54—Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 3
- C07D215/56—Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 3 with oxygen atoms in position 4
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/04—Ortho-condensed systems
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D491/00—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00
- C07D491/02—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00 in which the condensed system contains two hetero rings
- C07D491/04—Ortho-condensed systems

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Nitrogen Condensed Heterocyclic Rings (AREA)
Thin Film Transistor (AREA)
Junction Field-Effect Transistors (AREA)
Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Pyridine Compounds (AREA)
Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
Quinoline Compounds (AREA)

CH1155274A 1973-08-29 1974-08-23 CH599074A5 (da)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE2343462A DE2343462C2 (de)	1973-08-29	1973-08-29	Verfahren zur Herstellung von cyclischen Verbindungen aus einem Ester durch Ringschlußreaktionen

Publications (1)

Publication Number	Publication Date
CH599074A5 true CH599074A5 (da)	1978-05-12

Family

ID=5890990

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CH1155274A CH599074A5 (da)	1973-08-29	1974-08-23

Country Status (13)

Country	Link
JP (1)	JPS5050380A (da)
BE (1)	BE819195A (da)
CA (1)	CA1050026A (da)
CH (1)	CH599074A5 (da)
DK (1)	DK139968C (da)
ES (1)	ES429588A1 (da)
FI (1)	FI251874A7 (da)
FR (1)	FR2245584B1 (da)
GB (1)	GB1443620A (da)
HU (1)	HU169039B (da)
IT (1)	IT1021613B (da)
NL (1)	NL7411274A (da)
SE (1)	SE402273B (da)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2504875A (en) *	1945-06-04	1950-04-18	Us Sec War	Method for producing 4-hydroxyquinolines

1974
- 1974-08-23 CH CH1155274A patent/CH599074A5/de not_active IP Right Cessation
- 1974-08-23 NL NL7411274A patent/NL7411274A/xx not_active Application Discontinuation
- 1974-08-26 BE BE147914A patent/BE819195A/xx unknown
- 1974-08-27 JP JP49098315A patent/JPS5050380A/ja active Pending
- 1974-08-28 SE SE7410896A patent/SE402273B/xx unknown
- 1974-08-28 FR FR7429397A patent/FR2245584B1/fr not_active Expired
- 1974-08-28 IT IT7452773A patent/IT1021613B/it active
- 1974-08-28 GB GB3769374A patent/GB1443620A/en not_active Expired
- 1974-08-28 HU HUDI255A patent/HU169039B/hu unknown
- 1974-08-28 CA CA207,985A patent/CA1050026A/en not_active Expired
- 1974-08-28 DK DK457874A patent/DK139968C/da active
- 1974-08-28 ES ES429588A patent/ES429588A1/es not_active Expired
- 1974-08-28 FI FI2518/74A patent/FI251874A7/fi unknown

Also Published As

Publication number	Publication date
SE7410896L (da)	1975-03-03
GB1443620A (en)	1976-07-21
SE402273B (sv)	1978-06-26
DK139968C (da)	1979-11-05
HU169039B (da)	1976-09-28
FR2245584B1 (da)	1978-02-17
DK139968B (da)	1979-05-28
NL7411274A (nl)	1975-03-04
IT1021613B (it)	1978-02-20
DK457874A (da)	1975-04-28
BE819195A (fr)	1974-12-16
JPS5050380A (da)	1975-05-06
FI251874A7 (da)	1975-03-01
CA1050026A (en)	1979-03-06
ES429588A1 (es)	1976-09-16
FR2245584A1 (da)	1975-04-25

Legal Events

Date	Code	Title	Description
1984-04-30	PL	Patent ceased

Publication	Publication Date	Title
DE2455730C3 (de)	1985-08-08	Feldeffekt-Transistor mit einem Substrat aus einkristallinem Saphir oder Spinell
DE3853778T2 (de)	1995-10-12	Verfahren zur Herstellung eines Halbleiterbauelements.
DE10066412B4 (de)	2012-12-06	Halbleiterbauelement und Verfahren zu seiner Herstellung
DE3789894T2 (de)	1994-09-08	MOS-Feldeffekttransistor und dessen Herstellungsmethode.
DE19931324B4 (de)	2009-03-26	Siliciumcarbid-MOS-Halbleiter-Bauelement und Verfahren zu seiner Herstellung
DE4219319B4 (de)	2005-06-23	MOS-FET und Herstellungsverfahren dafür
DE69309565T2 (de)	1997-07-24	Feldeffekttransistor mit Graben mit niedrig dotiertem epitaktischen Gebiet an dessen Oberflächenbereich
DE10214150B4 (de)	2009-06-18	Siliziumkarbidhalbleitervorrichtung und Verfahren zur Herstellung derselben
DE69030415T2 (de)	1997-07-17	Verfahren zur Herstellung eines DMOS Transistors
DE2253702C3 (de)	1980-03-06	Verfahren zur Herstellung eines Halbleiterbauelementes
DE3334337A1 (de)	1984-03-29	Verfahren zur herstellung einer integrierten halbleitereinrichtung
DE102016112139B3 (de)	2018-01-04	Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper
DE3785521T2 (de)	1993-07-29	Senkrechter mis-anreicherungs-feldeffekt-transistor aus verbindungen der gruppe 111-v.
DE19806838A1 (de)	1998-08-27	Vertikaler Siliciumcarbid-MOSFET und Verfahren zur Herstellung desselben
DE2512373B2 (de)	1978-08-10	Isolierschicht-Feldeffekttransistor mit tiefer Verarmungszone
DE1913052A1 (de)	1969-10-02	Halbleitervorrichtung
DE102013010245A1 (de)	2013-12-24	Halbleitervorrichtung
DE3509899A1 (de)	1985-09-19	Mos-transistoranordnung mit veraenderlicher leitfaehigkeit
DE2335799A1 (de)	1974-02-07	Sperrschicht-feldeffekttransistoren in dielektrisch isolierten mesas
DE3116268C2 (de)	1986-03-20	Verfahren zur Herstellung einer Halbleiteranordnung
DE3636249A1 (de)	1987-05-07	Verfahren zum herstellen eines mos-feldeffekttransistors und danach hergestellter transistor
DE2502547A1 (de)	1975-11-13	Halbleiterkoerper mit bipolartransistor und verfahren zu dessen herstellung
DE3015782A1 (de)	1980-11-13	Feldeffekttransistor mit isolierter steuerelektrode und verfahren zur herstellung desselben
DE2833068A1 (de)	1979-02-08	Integrierte halbleitervorrichtung
DE3851815T2 (de)	1995-05-24	Feldeffekttransistor und dessen Herstellungsmethode.