CH612596A5 - Process for continuous manufacture of preformed single crystals and device for its use - Google Patents

Process for continuous manufacture of preformed single crystals and device for its use

Info

Publication number
CH612596A5
CH612596A5 CH1013876A CH1013876A CH612596A5 CH 612596 A5 CH612596 A5 CH 612596A5 CH 1013876 A CH1013876 A CH 1013876A CH 1013876 A CH1013876 A CH 1013876A CH 612596 A5 CH612596 A5 CH 612596A5
Authority
CH
Switzerland
Prior art keywords
crucible
single crystals
capillary orifice
seed
substance
Prior art date
Application number
CH1013876A
Inventor
Jean Ricard
Original Assignee
Ugine Kuhlmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7524770A external-priority patent/FR2321326A1/en
Priority claimed from FR7622863A external-priority patent/FR2359639A2/en
Application filed by Ugine Kuhlmann filed Critical Ugine Kuhlmann
Publication of CH612596A5 publication Critical patent/CH612596A5/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The substance is placed in a crucible, the bottom of which comprises a die with a capillary orifice and is brought above the melting point, a crystal seed is placed in contact with the drop hanging at the base of the capillary orifice, the seed is drawn downwards and the single crystal formed is removed at regular time intervals while the crucible is fed with substance. In addition to the crucible (1) with a capillary orifice (2), the device comprises a heating system (10) and a feed system (4), a conditioning enclosure (5) and a system (8) making it possible to move the crystal seed (9) in contact with the single crystal (7). The single crystals thus obtained have various uses, depending on their chemical nature, especially in watch making (ruby), in electronics (sapphire, silicon, yttrium), in piezoelectricity (quartz) and in infrared optics (NaCl). <IMAGE>
CH1013876A 1975-08-08 1976-08-09 Process for continuous manufacture of preformed single crystals and device for its use CH612596A5 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7524770A FR2321326A1 (en) 1975-08-08 1975-08-08 CONTINUOUS MANUFACTURING PROCESS OF PREFORMED SINGLE CRYSTALS
FR7622863A FR2359639A2 (en) 1976-07-27 1976-07-27 DEVICE FOR MANUFACTURING TUBES AND ASSEMBLIES OF SMALL MONOCRISTALLINE CYLINDERS

Publications (1)

Publication Number Publication Date
CH612596A5 true CH612596A5 (en) 1979-08-15

Family

ID=26219025

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1013876A CH612596A5 (en) 1975-08-08 1976-08-09 Process for continuous manufacture of preformed single crystals and device for its use

Country Status (5)

Country Link
JP (1) JPS5242479A (en)
CH (1) CH612596A5 (en)
DE (1) DE2635373C2 (en)
GB (1) GB1546843A (en)
IT (1) IT1069679B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2528454A1 (en) * 1982-06-11 1983-12-16 Criceram MODIFIED CREUSET FOR THE METHOD OF CRYSTALLIZATION BY PENDING DROP
DE4323793A1 (en) * 1993-07-15 1995-01-19 Wacker Chemitronic Process for the production of rods or blocks from semiconductor material which expands on solidification by crystallizing a melt produced from granules, and device for carrying it out
ATE156264T1 (en) * 1994-07-08 1997-08-15 Heraeus Electro Nite Int DEVICE FOR MEASURING SURFACE TENSION
DE4423720C1 (en) * 1994-07-08 1996-02-01 Heraeus Electro Nite Int Surface tension measurement esp. in molten metal
TW200510581A (en) * 2003-07-17 2005-03-16 Stella Chemifa Corp Method for producing crystal of fluoride
US7691199B2 (en) 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
JP5195301B2 (en) * 2008-10-31 2013-05-08 Ｔｄｋ株式会社 Single crystal pulling device
JP2021172575A (en) * 2020-04-30 2021-11-01 Tdk株式会社 Crucible and crystal production apparatus
JP2021172796A (en) * 2020-04-30 2021-11-01 Tdk株式会社 Single crystal phosphor, and production method of crystal
CN119927187B (en) * 2024-12-26 2025-09-26 北京航空航天大学杭州创新研究院 Batch preparation device and method for thermoelectric material wires

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1134967B (en) * 1954-03-02 1962-08-23 Siemens Ag Method for drawing a rod-shaped crystalline semiconductor body
DE1204837B (en) * 1961-08-21 1965-11-11 Merck & Co Inc Process for the continuous production of rods from thermoelectric materials
US3249404A (en) * 1963-02-20 1966-05-03 Merck & Co Inc Continuous growth of crystalline materials
US3765843A (en) * 1971-07-01 1973-10-16 Tyco Laboratories Inc Growth of tubular crystalline bodies
US3801309A (en) * 1971-11-08 1974-04-02 Tyco Laboratories Inc Production of eutectic bodies by unidirectional solidification
JPS5113568A (en) * 1974-07-24 1976-02-03 Hitachi Ltd Handotaiketsushono seizohohooyobi seizosochi

Also Published As

Publication number Publication date
JPS546510B2 (en) 1979-03-29
JPS5242479A (en) 1977-04-02
GB1546843A (en) 1979-05-31
IT1069679B (en) 1985-03-25
DE2635373A1 (en) 1977-04-21
DE2635373C2 (en) 1982-04-15

Similar Documents

Publication Publication Date Title
JPS52143755A (en) Laser, zone melting device
FR2547571B1 (en) PROCESS AND APPARATUS FOR PRODUCING HIGH PURITY SILICON
MY104640A (en) Apparatus for manufacturing silicon single crystals.
BE864356A (en) PROCESS AND DEVICE FOR THE MANUFACTURING OF THERMOLASTIC RETICULATED MATERIAL PRODUCTS
JPS549174A (en) Method of producing seingle crystal
SE8502375D0 (en) METHOD AND DEVICE FOR WRAPPONING OF MONOCRISTALLIC SILICON STARS
IT1069679B (en) PROCEDURE AND DEVICE FOR THE PRODUCTION OF PREFORMED MONOCRYSTALS
EP0357644A4 (en) Flash flow fused medicinal implants
BE880839A (en) DEVICE AND METHOD FOR GROWING VACUUM SILICON CRYSTALS FROM MOLTEN MATERIAL
FR2325581A1 (en) POWDER FEEDING DEVICE, ESPECIALLY FOR CRYSTAL GROWTH UNITS ACCORDING TO THE VERNEUIL METHOD
FR2344128A1 (en) IMPROVED PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE BY THE MERGING OF ZONE BY TEMPERATURE GRADIENT
FI872888L (en) ANORDNING FOER FRAMSTAELLNING AV ENKRISTALL FOER HALVLEDARE.
FR2649474B1 (en) PROCESS FOR REDUCING CONTAMINATION OF HIGH TEMPERATURE MELTING BATHS AND DEVICE OBTAINED
FR2377224A2 (en) METHOD AND DEVICE FOR MANUFACTURING PREFORMED MULTI-DOPING SINGLE CRYSTALS
JPS53113780A (en) Method of manufacturing silicon monocrystal containing little impurities
JPS51136581A (en) Process for production of a semi-conductor crystal
JPS54141389A (en) Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible
JPS57118092A (en) Manufacturing apparatus for beltlike silicon crystal
JPS5276278A (en) Apparatus for preparing long and narrow crystal
JPS51136582A (en) Process for production of a semi -conductor crystal
JPS52120290A (en) Production of gap single crystal
JPS53149875A (en) Preparing apparatus for semiconductor crystal
JPS5299065A (en) Production of semiconductor device
JPS6441212A (en) Semiconductor crystal growth method
JPS5371689A (en) Manufacturing apparatus for band type silicon crystal

Legal Events

Date Code Title Description
PL Patent ceased
PL Patent ceased