CH612596A5 - Process for continuous manufacture of preformed single crystals and device for its use - Google Patents
Process for continuous manufacture of preformed single crystals and device for its useInfo
- Publication number
- CH612596A5 CH612596A5 CH1013876A CH1013876A CH612596A5 CH 612596 A5 CH612596 A5 CH 612596A5 CH 1013876 A CH1013876 A CH 1013876A CH 1013876 A CH1013876 A CH 1013876A CH 612596 A5 CH612596 A5 CH 612596A5
- Authority
- CH
- Switzerland
- Prior art keywords
- crucible
- single crystals
- capillary orifice
- seed
- substance
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000126 substance Substances 0.000 abstract 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract 2
- 230000003750 conditioning effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000010979 ruby Substances 0.000 abstract 1
- 229910001750 ruby Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011780 sodium chloride Substances 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The substance is placed in a crucible, the bottom of which comprises a die with a capillary orifice and is brought above the melting point, a crystal seed is placed in contact with the drop hanging at the base of the capillary orifice, the seed is drawn downwards and the single crystal formed is removed at regular time intervals while the crucible is fed with substance. In addition to the crucible (1) with a capillary orifice (2), the device comprises a heating system (10) and a feed system (4), a conditioning enclosure (5) and a system (8) making it possible to move the crystal seed (9) in contact with the single crystal (7). The single crystals thus obtained have various uses, depending on their chemical nature, especially in watch making (ruby), in electronics (sapphire, silicon, yttrium), in piezoelectricity (quartz) and in infrared optics (NaCl). <IMAGE>
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7524770A FR2321326A1 (en) | 1975-08-08 | 1975-08-08 | CONTINUOUS MANUFACTURING PROCESS OF PREFORMED SINGLE CRYSTALS |
| FR7622863A FR2359639A2 (en) | 1976-07-27 | 1976-07-27 | DEVICE FOR MANUFACTURING TUBES AND ASSEMBLIES OF SMALL MONOCRISTALLINE CYLINDERS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH612596A5 true CH612596A5 (en) | 1979-08-15 |
Family
ID=26219025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1013876A CH612596A5 (en) | 1975-08-08 | 1976-08-09 | Process for continuous manufacture of preformed single crystals and device for its use |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5242479A (en) |
| CH (1) | CH612596A5 (en) |
| DE (1) | DE2635373C2 (en) |
| GB (1) | GB1546843A (en) |
| IT (1) | IT1069679B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2528454A1 (en) * | 1982-06-11 | 1983-12-16 | Criceram | MODIFIED CREUSET FOR THE METHOD OF CRYSTALLIZATION BY PENDING DROP |
| DE4323793A1 (en) * | 1993-07-15 | 1995-01-19 | Wacker Chemitronic | Process for the production of rods or blocks from semiconductor material which expands on solidification by crystallizing a melt produced from granules, and device for carrying it out |
| ATE156264T1 (en) * | 1994-07-08 | 1997-08-15 | Heraeus Electro Nite Int | DEVICE FOR MEASURING SURFACE TENSION |
| DE4423720C1 (en) * | 1994-07-08 | 1996-02-01 | Heraeus Electro Nite Int | Surface tension measurement esp. in molten metal |
| TW200510581A (en) * | 2003-07-17 | 2005-03-16 | Stella Chemifa Corp | Method for producing crystal of fluoride |
| US7691199B2 (en) | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| JP5195301B2 (en) * | 2008-10-31 | 2013-05-08 | Ｔｄｋ株式会社 | Single crystal pulling device |
| JP2021172796A (en) * | 2020-04-30 | 2021-11-01 | Tdk株式会社 | Single crystal phosphor, and production method of crystal |
| JP2021172575A (en) * | 2020-04-30 | 2021-11-01 | Tdk株式会社 | Crucible and crystal production apparatus |
| CN119927187B (en) * | 2024-12-26 | 2025-09-26 | 北京航空航天大学杭州创新研究院 | Batch preparation device and method for thermoelectric material wires |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1134967B (en) * | 1954-03-02 | 1962-08-23 | Siemens Ag | Method for drawing a rod-shaped crystalline semiconductor body |
| DE1204837B (en) * | 1961-08-21 | 1965-11-11 | Merck & Co Inc | Process for the continuous production of rods from thermoelectric materials |
| US3249404A (en) * | 1963-02-20 | 1966-05-03 | Merck & Co Inc | Continuous growth of crystalline materials |
| US3765843A (en) * | 1971-07-01 | 1973-10-16 | Tyco Laboratories Inc | Growth of tubular crystalline bodies |
| US3801309A (en) * | 1971-11-08 | 1974-04-02 | Tyco Laboratories Inc | Production of eutectic bodies by unidirectional solidification |
| JPS5113568A (en) * | 1974-07-24 | 1976-02-03 | Hitachi Ltd | Handotaiketsushono seizohohooyobi seizosochi |
-
1976
- 1976-08-06 DE DE19762635373 patent/DE2635373C2/en not_active Expired
- 1976-08-09 JP JP9407376A patent/JPS5242479A/en active Granted
- 1976-08-09 IT IT6898476A patent/IT1069679B/en active
- 1976-08-09 GB GB3310076A patent/GB1546843A/en not_active Expired
- 1976-08-09 CH CH1013876A patent/CH612596A5/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2635373C2 (en) | 1982-04-15 |
| IT1069679B (en) | 1985-03-25 |
| JPS546510B2 (en) | 1979-03-29 |
| GB1546843A (en) | 1979-05-31 |
| DE2635373A1 (en) | 1977-04-21 |
| JPS5242479A (en) | 1977-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |