CH648453GA3 - - Google Patents

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Publication number
CH648453GA3
CH648453GA3 CH63581A CH63581A CH648453GA3 CH 648453G A3 CH648453G A3 CH 648453GA3 CH 63581 A CH63581 A CH 63581A CH 63581 A CH63581 A CH 63581A CH 648453G A3 CH648453G A3 CH 648453GA3
Authority
CH
Switzerland
Prior art keywords
transistors
source
substrate
constant voltage
series
Prior art date
Application number
CH63581A
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of CH648453GA3 publication Critical patent/CH648453GA3/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • G—PHYSICS
    • G04—HOROLOGY
    • G04G—ELECTRONIC TIME-PIECES
    • G04G19/00—Electric power supply circuits specially adapted for use in electronic time-pieces
    • G04G19/02—Conversion or regulation of current or voltage
    • G04G19/06—Regulation
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A semiconductor device for generating a constant voltage and comprised of a pair of MOS field effect transistors of the same conductivity type connected in series. A first of the transistors is a depletion type and has a gate connected to its source and its source connected to its substrate so as to operate as an active device. The second transistor has a gate connected to its drain and a source connected to its substrate. When a supply voltage is applied across the series combination of the first and second transistors, a constant voltage is developed at the connection node between the first and second transistors.
CH63581A 1980-02-01 1981-01-30 CH648453GA3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1102180A JPS56108258A (en) 1980-02-01 1980-02-01 Semiconductor device

Publications (1)

Publication Number Publication Date
CH648453GA3 true CH648453GA3 (en) 1985-03-29

Family

ID=11766445

Family Applications (1)

Application Number Title Priority Date Filing Date
CH63581A CH648453GA3 (en) 1980-02-01 1981-01-30

Country Status (3)

Country Link
US (1) US4417263A (en)
JP (1) JPS56108258A (en)
CH (1) CH648453GA3 (en)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1218845B (en) * 1984-03-30 1990-04-24 Ates Componenti Elettron NOISE ATTENUATOR INTERFACE CIRCUIT FOR TWO-STAGE TIMING SIGNAL GENERATORS
US4730228A (en) * 1986-03-21 1988-03-08 Siemens Aktiengesellschaft Overtemperature detection of power semiconductor components
KR940003406B1 (en) * 1991-06-12 1994-04-21 삼성전자 주식회사 Circuit of internal source voltage generation
JP3342730B2 (en) * 1993-03-17 2002-11-11 富士通株式会社 Nonvolatile semiconductor memory device
US6198337B1 (en) * 1996-12-11 2001-03-06 A & Cmos Communications Device Inc. Semiconductor device for outputting a reference voltage, a crystal oscillator device comprising the same, and a method of producing the crystal oscillator device
US6144248A (en) * 1998-07-16 2000-11-07 Ricoh Company, Ltd. Reference voltage generating circuit having a temperature characteristic correction circuit providing low temperature sensitivity to a reference voltage
JP4194237B2 (en) 1999-12-28 2008-12-10 株式会社リコー Voltage generation circuit and reference voltage source circuit using field effect transistor
US6552603B2 (en) 2000-06-23 2003-04-22 Ricoh Company Ltd. Voltage reference generation circuit and power source incorporating such circuit
JP3717388B2 (en) 2000-09-27 2005-11-16 株式会社リコー Reference voltage generating circuit, output value adjusting method thereof, and power supply device
JP4765168B2 (en) * 2001-01-16 2011-09-07 富士電機株式会社 Reference voltage semiconductor device
JP4691846B2 (en) * 2001-07-16 2011-06-01 富士電機システムズ株式会社 MOS reference voltage circuit and manufacturing method thereof
JP3575453B2 (en) 2001-09-14 2004-10-13 ソニー株式会社 Reference voltage generation circuit
JP4117780B2 (en) * 2002-01-29 2008-07-16 セイコーインスツル株式会社 Reference voltage circuit and electronic equipment
JP4150326B2 (en) * 2003-11-12 2008-09-17 株式会社リコー Constant voltage circuit
US7394209B2 (en) 2004-02-11 2008-07-01 02 Micro International Limited Liquid crystal display system with lamp feedback
JP2006313438A (en) * 2005-05-06 2006-11-16 Mitsumi Electric Co Ltd Reference voltage generation circuit
JP4713280B2 (en) * 2005-08-31 2011-06-29 株式会社リコー Reference voltage generation circuit and constant voltage circuit using the reference voltage generation circuit
JP4624890B2 (en) * 2005-09-05 2011-02-02 富士通セミコンダクター株式会社 Circuit design method and simulation system
US7659756B2 (en) * 2005-09-29 2010-02-09 Supertex, Inc. MOSFET transistor amplifier with controlled output current
JP4716887B2 (en) * 2006-02-09 2011-07-06 株式会社リコー Constant current circuit
JP5511166B2 (en) * 2008-09-10 2014-06-04 セイコーインスツル株式会社 Semiconductor device
JP5544421B2 (en) * 2009-06-26 2014-07-09 ザ リージェンツ オブ ユニバーシティー オブ ミシガン Two-transistor reference voltage generator
JP5470128B2 (en) * 2010-03-26 2014-04-16 ローム株式会社 Constant voltage circuit, comparator and voltage monitoring circuit using them
JP2012075049A (en) * 2010-09-29 2012-04-12 Dainippon Printing Co Ltd Logical not type electronic circuit
JP6205238B2 (en) * 2013-10-25 2017-09-27 エスアイアイ・セミコンダクタ株式会社 Reference voltage generator
JP6215652B2 (en) * 2013-10-28 2017-10-18 エスアイアイ・セミコンダクタ株式会社 Reference voltage generator
JP6384956B2 (en) * 2014-11-07 2018-09-05 富士電機株式会社 Semiconductor circuit device
US10446567B2 (en) * 2017-03-31 2019-10-15 Asahi Kasei Microdevices Corporation Nonvolatile storage element and reference voltage generation circuit
WO2019069377A1 (en) 2017-10-03 2019-04-11 旭化成エレクトロニクス株式会社 Non-volatile storage element and analog circuit provided with same
JP7000187B2 (en) * 2018-02-08 2022-01-19 エイブリック株式会社 Reference voltage circuit and semiconductor device
CN114553216B (en) * 2020-11-25 2025-02-07 长鑫存储技术有限公司 Potential generating circuits, inverters, delay circuits and logic gate circuits
CN114553196B (en) 2020-11-25 2026-01-16 长鑫存储技术有限公司 Potential generating circuit, inverter, delay circuit and logic gate circuit
US11887652B2 (en) 2020-11-25 2024-01-30 Changxin Memory Technologies, Inc. Control circuit and delay circuit
CN114545809B (en) 2020-11-25 2024-05-03 长鑫存储技术有限公司 Control circuit and delay circuit
JP2024080058A (en) * 2022-12-01 2024-06-13 ローム株式会社 Voltage Generation Circuit
EP4435554A1 (en) * 2023-03-24 2024-09-25 Nexperia B.V. Reference voltage circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346344A (en) * 1979-02-08 1982-08-24 Signetics Corporation Stable field effect transistor voltage reference
US4321484A (en) * 1979-02-28 1982-03-23 International Business Machines Corporation Field effect transistor multivibrator
US4347476A (en) * 1980-12-04 1982-08-31 Rockwell International Corporation Voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques

Also Published As

Publication number Publication date
US4417263A (en) 1983-11-22
JPS56108258A (en) 1981-08-27
JPH0465546B2 (en) 1992-10-20

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