CH684950A5 - Verfahren zum Dotieren von Targetmaterial. - Google Patents
Verfahren zum Dotieren von Targetmaterial. Download PDFInfo
- Publication number
- CH684950A5 CH684950A5 CH3391/91A CH339191A CH684950A5 CH 684950 A5 CH684950 A5 CH 684950A5 CH 3391/91 A CH3391/91 A CH 3391/91A CH 339191 A CH339191 A CH 339191A CH 684950 A5 CH684950 A5 CH 684950A5
- Authority
- CH
- Switzerland
- Prior art keywords
- target
- magnet unit
- sputtering
- base material
- doping
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 28
- 239000013077 target material Substances 0.000 title description 2
- 239000000463 material Substances 0.000 claims description 83
- 238000004544 sputter deposition Methods 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000956 alloy Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 101100072420 Caenorhabditis elegans ins-5 gene Proteins 0.000 claims 1
- 238000003491 array Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000002019 doping agent Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000889 atomisation Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000009420 retrofitting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4107711A DE4107711C2 (de) | 1991-03-09 | 1991-03-09 | Verfahren und Vorrichtung zur Abscheidung dotierter Schichten oder chemischer Verbindungen oder Legierungen mittels einer Magnetronkathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH684950A5 true CH684950A5 (de) | 1995-02-15 |
Family
ID=6426953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH3391/91A CH684950A5 (de) | 1991-03-09 | 1991-11-20 | Verfahren zum Dotieren von Targetmaterial. |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH0578837A (fr) |
| BE (1) | BE1004534A3 (fr) |
| CH (1) | CH684950A5 (fr) |
| DE (1) | DE4107711C2 (fr) |
| FI (1) | FI99029C (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19813075A1 (de) * | 1998-03-25 | 1999-09-30 | Leybold Ag | Vorrichtung zum Beschichten eines Substrates |
| EP1950797A4 (fr) * | 2005-10-26 | 2010-07-14 | Sharp Kk | Procede de production d un film utilisant un plasma d hydrogene sous pression atmospherique et procede et appareil de production d un film de purification |
| JP4750619B2 (ja) * | 2006-05-09 | 2011-08-17 | 株式会社昭和真空 | マグネトロンカソードとそれを搭載したスパッタ装置 |
| JP7045177B2 (ja) * | 2017-12-12 | 2022-03-31 | 株式会社アルバック | スパッタ装置 |
| DE102024000625A1 (de) * | 2024-02-27 | 2025-08-28 | Hermann Schlemm | Anordnung zum Zerstäuben von Targetmaterial in einem magnetfeldgestützten Plasma mit definierter Primärionenenergie |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU491734A1 (fr) * | 1971-11-18 | 1975-11-15 | ||
| US4166018A (en) * | 1974-01-31 | 1979-08-28 | Airco, Inc. | Sputtering process and apparatus |
| DD118304A1 (fr) * | 1975-04-08 | 1976-02-20 | ||
| SU620513A1 (ru) * | 1976-12-30 | 1978-07-12 | Предприятие П/Я В-2763 | Катодный узел |
| DE3248121A1 (de) * | 1982-12-24 | 1984-06-28 | Leybold-Heraeus GmbH, 5000 Köln | Hochleistungs-katodenanordnung fuer die erzeugung von mehrfachschichten |
| US4486287A (en) * | 1984-02-06 | 1984-12-04 | Fournier Paul R | Cross-field diode sputtering target assembly |
| EP0246765A3 (fr) * | 1986-05-15 | 1988-12-14 | Varian Associates, Inc. | Appareil et méthode de fabrication de films d'aluminium planarisés |
| JP2566137B2 (ja) * | 1986-12-25 | 1996-12-25 | ティーディーケイ株式会社 | 薄膜の製造方法 |
| US4865710A (en) * | 1988-03-31 | 1989-09-12 | Wisconsin Alumni Research Foundation | Magnetron with flux switching cathode and method of operation |
| DE3812379A1 (de) * | 1988-04-14 | 1989-10-26 | Leybold Ag | Zerstaeubungskathode nach dem magnetron-prinzip |
| JPH02179871A (ja) * | 1988-12-28 | 1990-07-12 | Matsushita Electric Ind Co Ltd | 薄膜形成方法およびマグネトロンスパッタ装置 |
| DE3929695C2 (de) * | 1989-09-07 | 1996-12-19 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats |
-
1991
- 1991-03-09 DE DE4107711A patent/DE4107711C2/de not_active Expired - Fee Related
- 1991-11-20 CH CH3391/91A patent/CH684950A5/de not_active IP Right Cessation
-
1992
- 1992-01-15 BE BE9200036A patent/BE1004534A3/fr not_active IP Right Cessation
- 1992-02-04 FI FI920475A patent/FI99029C/fi active
- 1992-03-09 JP JP4050353A patent/JPH0578837A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0578837A (ja) | 1993-03-30 |
| DE4107711C2 (de) | 1999-11-11 |
| BE1004534A3 (fr) | 1992-12-08 |
| FI99029C (fi) | 1997-09-25 |
| FI99029B (fi) | 1997-06-13 |
| FI920475A0 (fi) | 1992-02-04 |
| FI920475A7 (fi) | 1992-09-10 |
| DE4107711A1 (de) | 1992-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3107914C2 (fr) | ||
| DE3047113A1 (de) | Katodenanordnung und regelverfahren fuer katodenzerstaeubungsanlagen mit einem magnetsystem zur erhoehung der zerstaeubungsrate | |
| EP0416241B1 (fr) | Dispositif pour le revêtement d'un substrat | |
| DE2707144A1 (de) | Kathodenzerstaeubungsvorrichtung | |
| CH649578A5 (de) | Hochgeschwindigkeits-kathoden-zerstaeubungsvorrichtung. | |
| DE4135939C2 (fr) | ||
| EP0253344A2 (fr) | Cathode de pulvérisation selon le principe magnétron | |
| EP1186681B1 (fr) | Dispositif de traitement sous vide avec support de substrats couplable | |
| DE1116015B (de) | Verfahren und Vorrichtung zum kathodischen Spruehen eines Filmes auf ein Werkstueck | |
| EP0450163A1 (fr) | Dispositif pour revêtir un substrat avec les matériaux, par exemple avec les métaux | |
| EP0504477B1 (fr) | Dispositif de revêtement d'un substrat | |
| EP1144714A1 (fr) | Procede et dispositif permettant de recouvrir des substrats par pulverisation magnetron a impulsions bipolaires et leur utilisation | |
| DE2208032A1 (de) | Zerstäubungsvorrichtung | |
| EP1576641A2 (fr) | Source d'arc sous vide comprenant un dispositif de production de champ magnetique | |
| EP1722005B1 (fr) | Méthode pour l'utilisation d'une cathode de pulvérisation ayant une cible | |
| DE4107711C2 (de) | Verfahren und Vorrichtung zur Abscheidung dotierter Schichten oder chemischer Verbindungen oder Legierungen mittels einer Magnetronkathode | |
| DE2115590A1 (en) | Cathode sputtering device - has cathode with projecting rim | |
| DE69627249T2 (de) | Hochvakuum-Sputter-Vorrichtung und zu behandelndes Substrat | |
| DE4304581A1 (de) | Vorrichtung zum Beschichten eines Substrats | |
| DE3442206A1 (de) | Magnetronkatode zum zerstaeuben ferromagnetischer targets | |
| WO2000016373A1 (fr) | Ensemble cible pour chambre d'evaporation par l'intermediaire d'un arc | |
| DE1817014C3 (de) | Verfahren zum Spriihniederschlagen von Material von einem Target zur Bildung eines legierten Niederschlages auf einem Substrat | |
| EP1462538B1 (fr) | Procédé de pulvérisation au magnétron réactif | |
| DE10318364A1 (de) | Einrichtung zum Beschichten eines stationär angeordneten Substrats durch Puls-Magnetron-Sputtern | |
| EP1889280A1 (fr) | Pulverisation cathodique magnetron |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |