CH695519A5 - Sperrstromthyristor. - Google Patents

Sperrstromthyristor.

Info

Publication number
CH695519A5
CH695519A5 CH00820/01A CH8202001A CH695519A5 CH 695519 A5 CH695519 A5 CH 695519A5 CH 00820/01 A CH00820/01 A CH 00820/01A CH 8202001 A CH8202001 A CH 8202001A CH 695519 A5 CH695519 A5 CH 695519A5
Authority
CH
Switzerland
Prior art keywords
sperrstromthyristor
Prior art date
Application number
CH00820/01A
Other languages
English (en)
Other versions
CH695519A8 (de
Inventor
Yoshihiro Yamaguchi
Noritoshi Hirano
Katsumi Satoh
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CH695519A5 publication Critical patent/CH695519A5/de
Publication of CH695519A8 publication Critical patent/CH695519A8/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
CH00820/01A 2000-07-27 2001-05-04 Sperrstromthyristor. CH695519A8 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000226985A JP4416288B2 (ja) 2000-07-27 2000-07-27 逆導通サイリスタ

Publications (2)

Publication Number Publication Date
CH695519A5 true CH695519A5 (de) 2006-06-15
CH695519A8 CH695519A8 (de) 2006-08-15

Family

ID=18720507

Family Applications (1)

Application Number Title Priority Date Filing Date
CH00820/01A CH695519A8 (de) 2000-07-27 2001-05-04 Sperrstromthyristor.

Country Status (4)

Country Link
US (1) US6388276B1 (de)
JP (1) JP4416288B2 (de)
CH (1) CH695519A8 (de)
DE (1) DE10121551B4 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4264316B2 (ja) * 2003-09-01 2009-05-13 株式会社豊田中央研究所 半導体装置とその製造方法
DE10352437A1 (de) 2003-11-10 2005-06-16 Wagner Alarm- Und Sicherungssysteme Gmbh Vorrichtung zum Verhindern und Löschen von Bränden
JP2005340550A (ja) * 2004-05-28 2005-12-08 Sanyo Electric Co Ltd 半導体装置
JP2005353991A (ja) * 2004-06-14 2005-12-22 Sanyo Electric Co Ltd 半導体装置
US7514819B2 (en) * 2004-07-01 2009-04-07 Dana Automotive Systems Group, Llc Semiconductor switch assembly for pulse power apparatus
US7511346B2 (en) * 2005-12-27 2009-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Design of high-frequency substrate noise isolation in BiCMOS technology
JP4743447B2 (ja) * 2008-05-23 2011-08-10 三菱電機株式会社 半導体装置
CN108899358A (zh) * 2018-07-11 2018-11-27 北京优捷敏半导体技术有限公司 一种门极可关断晶闸管及其制造方法
CN111969054A (zh) * 2020-08-20 2020-11-20 湖南大学 一种逆导型SiC GTO半导体器件及其制备方法
US11799021B2 (en) * 2021-08-23 2023-10-24 Globalfoundries U.S. Inc. Lateral bipolar transistor structure with marker layer for emitter and collector
CN116110945A (zh) * 2023-04-14 2023-05-12 江西萨瑞微电子技术有限公司 一种tss半导体放电管及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074677A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 複合型サイリスタ
DE3521079A1 (de) * 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
JPS6257250A (ja) 1985-09-06 1987-03-12 Hitachi Ltd 半導体装置
JP2796470B2 (ja) * 1992-05-06 1998-09-10 三菱電機株式会社 自己消弧型サイリスタおよびその製造方法
JP2796057B2 (ja) * 1993-03-25 1998-09-10 三菱電機株式会社 逆導通ゲートターンオフサイリスタ
JPH0786567A (ja) 1993-09-14 1995-03-31 Toshiba Corp 半導体装置
EP0643424A1 (de) * 1993-09-14 1995-03-15 Kabushiki Kaisha Toshiba Rückwarts leitender Gate-Turn-off-Thyristor
US5682044A (en) * 1995-01-31 1997-10-28 Takashige Tamamushi Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure
US5698454A (en) * 1995-07-31 1997-12-16 Ixys Corporation Method of making a reverse blocking IGBT
DE19640656A1 (de) * 1996-10-02 1998-04-09 Asea Brown Boveri Rückwärtsleitender GTO

Also Published As

Publication number Publication date
JP4416288B2 (ja) 2010-02-17
DE10121551A1 (de) 2002-02-14
DE10121551B4 (de) 2006-08-03
CH695519A8 (de) 2006-08-15
JP2002043561A (ja) 2002-02-08
US6388276B1 (en) 2002-05-14
US20020030199A1 (en) 2002-03-14

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Legal Events

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Owner name: MITSUBISHI DENKI KABUSHIKI KAISHA

Free format text: MITSUBISHI DENKI KABUSHIKI KAISHA#NO. 2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU#TOKYO 100-8310 (JP) -TRANSFER TO- MITSUBISHI DENKI KABUSHIKI KAISHA#NO. 2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU#TOKYO 100-8310 (JP)

PL Patent ceased