CL2011001756A1 - Metodo de fabricacion de peliculas delgadas para aplicaciones fotovoltaicas o electronicas, que comprende fabricar una capa precursora de nanocristal y selenizar la capa precursora en una atmosfera que contiene selenio; y metodo de fabricacion de una capa precursora de nanocristal. - Google Patents

Metodo de fabricacion de peliculas delgadas para aplicaciones fotovoltaicas o electronicas, que comprende fabricar una capa precursora de nanocristal y selenizar la capa precursora en una atmosfera que contiene selenio; y metodo de fabricacion de una capa precursora de nanocristal.

Info

Publication number
CL2011001756A1
CL2011001756A1 CL2011001756A CL2011001756A CL2011001756A1 CL 2011001756 A1 CL2011001756 A1 CL 2011001756A1 CL 2011001756 A CL2011001756 A CL 2011001756A CL 2011001756 A CL2011001756 A CL 2011001756A CL 2011001756 A1 CL2011001756 A1 CL 2011001756A1
Authority
CL
Chile
Prior art keywords
precursor layer
manufacturing
selenizing
photovoltaic
nanocrystalline
Prior art date
Application number
CL2011001756A
Other languages
English (en)
Inventor
Rakesh Agrawal
Hugh Hillhouse
Qijie Guo
Original Assignee
Purdue Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Purdue Research Foundation filed Critical Purdue Research Foundation
Publication of CL2011001756A1 publication Critical patent/CL2011001756A1/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Método de fabricación de películas delgadas para aplicaciones fotovoltaicas o electrónicas, que comprende fabricar una capa precursora de nanocristal y selenizar la capa precursora en una atmósfera que contiene selenio; y método de fabricación de una capa precursora de nanocristal.
CL2011001756A 2009-01-21 2011-07-20 Metodo de fabricacion de peliculas delgadas para aplicaciones fotovoltaicas o electronicas, que comprende fabricar una capa precursora de nanocristal y selenizar la capa precursora en una atmosfera que contiene selenio; y metodo de fabricacion de una capa precursora de nanocristal. CL2011001756A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14608409P 2009-01-21 2009-01-21

Publications (1)

Publication Number Publication Date
CL2011001756A1 true CL2011001756A1 (es) 2012-02-10

Family

ID=42356199

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2011001756A CL2011001756A1 (es) 2009-01-21 2011-07-20 Metodo de fabricacion de peliculas delgadas para aplicaciones fotovoltaicas o electronicas, que comprende fabricar una capa precursora de nanocristal y selenizar la capa precursora en una atmosfera que contiene selenio; y metodo de fabricacion de una capa precursora de nanocristal.

Country Status (10)

Country Link
US (1) US8722447B2 (es)
EP (1) EP2379458A4 (es)
JP (1) JP2012515708A (es)
KR (1) KR20110108388A (es)
CN (1) CN102361830A (es)
AU (1) AU2010206814A1 (es)
BR (1) BRPI1006965A2 (es)
CL (1) CL2011001756A1 (es)
CO (1) CO6400212A2 (es)
WO (1) WO2010085553A1 (es)

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JP2012114250A (ja) * 2010-11-25 2012-06-14 Kyocera Corp 光電変換装置の製造方法
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KR20120131535A (ko) * 2011-05-25 2012-12-05 한국에너지기술연구원 ＣＩＧＳ／ＣＩＳ 나노입자의 셀렌화에 의한 치밀한 ＣＩＧＳｅ／ＣＩＳｅ 박막 제조방법
WO2012163976A1 (en) * 2011-06-03 2012-12-06 Bayer Intellectual Property Gmbh Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification
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Also Published As

Publication number Publication date
AU2010206814A1 (en) 2011-08-11
CO6400212A2 (es) 2012-03-15
EP2379458A1 (en) 2011-10-26
US20120122268A1 (en) 2012-05-17
BRPI1006965A2 (pt) 2016-04-12
KR20110108388A (ko) 2011-10-05
EP2379458A4 (en) 2015-02-11
JP2012515708A (ja) 2012-07-12
CN102361830A (zh) 2012-02-22
WO2010085553A1 (en) 2010-07-29
US8722447B2 (en) 2014-05-13

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