CL2015000626A1 - Elemento solar que comprende un resonador dispuesto sobre una estructura, formado por una estructura dieléctrica en capas que consiste en un área con amortiguación electromagnética mínima, cuyo plano superior constituye el plano de incidencia, la estructura dieléctrica es permeable a una onda electromagnética, un resonador 2d-3d se dispone en el área con amortiguación mínima, en donde la parte 2d del resonador se dispone en el plano de incidencia, y la parte 3d en el dieléctrico - Google Patents

Elemento solar que comprende un resonador dispuesto sobre una estructura, formado por una estructura dieléctrica en capas que consiste en un área con amortiguación electromagnética mínima, cuyo plano superior constituye el plano de incidencia, la estructura dieléctrica es permeable a una onda electromagnética, un resonador 2d-3d se dispone en el área con amortiguación mínima, en donde la parte 2d del resonador se dispone en el plano de incidencia, y la parte 3d en el dieléctrico

Info

Publication number
CL2015000626A1
CL2015000626A1 CL2015000626A CL2015000626A CL2015000626A1 CL 2015000626 A1 CL2015000626 A1 CL 2015000626A1 CL 2015000626 A CL2015000626 A CL 2015000626A CL 2015000626 A CL2015000626 A CL 2015000626A CL 2015000626 A1 CL2015000626 A1 CL 2015000626A1
Authority
CL
Chile
Prior art keywords
resonator
plane
incidence
area
dielectric
Prior art date
Application number
CL2015000626A
Other languages
English (en)
Inventor
Pavel Fiala
Original Assignee
Vysoké Ucéni Technické Y Brné
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vysoké Ucéni Technické Y Brné filed Critical Vysoké Ucéni Technické Y Brné
Publication of CL2015000626A1 publication Critical patent/CL2015000626A1/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/45—Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/248—Supports; Mounting means by structural association with other equipment or articles with receiving set provided with an AC/DC converting device, e.g. rectennas
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
CL2015000626A 2012-09-14 2015-03-13 Elemento solar que comprende un resonador dispuesto sobre una estructura, formado por una estructura dieléctrica en capas que consiste en un área con amortiguación electromagnética mínima, cuyo plano superior constituye el plano de incidencia, la estructura dieléctrica es permeable a una onda electromagnética, un resonador 2d-3d se dispone en el área con amortiguación mínima, en donde la parte 2d del resonador se dispone en el plano de incidencia, y la parte 3d en el dieléctrico CL2015000626A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CZ2012636A CZ309259B6 (cs) 2012-09-14 2012-09-14 Fotovoltaický systém zahrnující elementární rezonátor pro využití v energetice

Publications (1)

Publication Number Publication Date
CL2015000626A1 true CL2015000626A1 (es) 2015-08-07

Family

ID=47429473

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2015000626A CL2015000626A1 (es) 2012-09-14 2015-03-13 Elemento solar que comprende un resonador dispuesto sobre una estructura, formado por una estructura dieléctrica en capas que consiste en un área con amortiguación electromagnética mínima, cuyo plano superior constituye el plano de incidencia, la estructura dieléctrica es permeable a una onda electromagnética, un resonador 2d-3d se dispone en el área con amortiguación mínima, en donde la parte 2d del resonador se dispone en el plano de incidencia, y la parte 3d en el dieléctrico

Country Status (23)

Country Link
US (1) US20150228830A1 (es)
EP (1) EP2896073A2 (es)
JP (1) JP6208241B2 (es)
KR (1) KR102023448B1 (es)
CN (1) CN104813486B (es)
AP (1) AP2015008297A0 (es)
AU (2) AU2012389626A1 (es)
BR (1) BR112015005486B1 (es)
CL (1) CL2015000626A1 (es)
CZ (1) CZ309259B6 (es)
EA (1) EA028829B1 (es)
IL (1) IL237587B (es)
MA (1) MA37995B1 (es)
MX (1) MX345456B (es)
MY (1) MY172199A (es)
PE (1) PE20150950A1 (es)
PH (1) PH12015500560B1 (es)
RS (1) RS56386B1 (es)
SG (1) SG11201501630YA (es)
TN (1) TN2015000088A1 (es)
UA (1) UA117107C2 (es)
WO (1) WO2014040576A2 (es)
ZA (1) ZA201501668B (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10389020B2 (en) 2011-01-27 2019-08-20 Vysoke Uceni Technicke V Brne Solar element comprising resonator for application in energetics
US10396449B2 (en) 2011-01-27 2019-08-27 Vysoke Uceni Technicke V Brne Photovoltaic element with an included resonator
CZ309259B6 (cs) * 2012-09-14 2022-06-29 Vysoké Učení Technické V Brně Fotovoltaický systém zahrnující elementární rezonátor pro využití v energetice
CZ307127B6 (cs) 2016-07-25 2018-01-24 Vysoké Učení Technické V Brně Radiofrekvenční identifikátor laditelný dielektrickými vložkami
CN115249890B (zh) * 2021-04-28 2025-04-01 合肥工业大学 一种太赫兹信号探测装置及其制备方法
CN114244178B (zh) * 2021-12-10 2024-09-10 江苏城乡建设职业学院 用于半导体发光组件的异质结发电设备及计算机构建方法

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JP4440213B2 (ja) * 2003-09-08 2010-03-24 財団法人大阪産業振興機構 フラクタル構造体、フラクタル構造集合体およびそれらの用途
US7486236B2 (en) * 2005-09-23 2009-02-03 University Of South Florida High-frequency feed structure antenna apparatus and method of use
JP2008166697A (ja) * 2006-12-08 2008-07-17 Fujifilm Corp 光エネルギー移動素子及び人工光合成素子
JP5300344B2 (ja) * 2007-07-06 2013-09-25 キヤノン株式会社 光検出素子及び撮像素子、光検出方法及び撮像方法
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JP2010027794A (ja) * 2008-07-17 2010-02-04 Fujifilm Corp 光電変換デバイス
EP2321854A2 (en) * 2008-07-25 2011-05-18 Ramot at Tel-Aviv University Ltd. Rectifying antenna device with nanostructure diode
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JP4845988B2 (ja) * 2009-03-30 2011-12-28 株式会社豊田中央研究所 アンテナ装置
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KR101702914B1 (ko) * 2009-12-29 2017-02-06 삼성전자주식회사 공진 전력 전송의 반사파 에너지 관리 장치
CN101872797A (zh) * 2010-04-13 2010-10-27 中国计量学院 一种基于微桥谐振器的新型红外探测器结构及制作方法
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CZ303866B6 (cs) * 2011-01-27 2013-06-05 Vysoké ucení technické v Brne Fotovoltaický element zahrnující rezonátor
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Also Published As

Publication number Publication date
RS56386B1 (sr) 2017-12-29
CZ309259B6 (cs) 2022-06-29
CN104813486B (zh) 2017-09-22
RS20150180A1 (sr) 2015-08-31
WO2014040576A2 (en) 2014-03-20
JP2015534268A (ja) 2015-11-26
HK1208762A1 (en) 2016-03-11
IL237587B (en) 2018-08-30
MX2015003289A (es) 2015-07-06
AU2012389626A1 (en) 2015-03-19
TN2015000088A1 (en) 2016-06-29
PE20150950A1 (es) 2015-06-20
AP2015008297A0 (en) 2015-03-31
CN104813486A (zh) 2015-07-29
PH12015500560B1 (en) 2018-11-23
MA37995B1 (fr) 2016-10-31
WO2014040576A3 (en) 2014-06-26
CZ2012636A3 (cs) 2014-03-26
BR112015005486B1 (pt) 2021-12-21
AU2017258961B2 (en) 2019-11-21
MX345456B (es) 2017-01-25
JP6208241B2 (ja) 2017-10-04
US20150228830A1 (en) 2015-08-13
MA37995A1 (fr) 2016-03-31
EP2896073A2 (en) 2015-07-22
EA028829B1 (ru) 2018-01-31
IL237587A0 (en) 2015-04-30
SG11201501630YA (en) 2015-04-29
ZA201501668B (en) 2016-02-24
MY172199A (en) 2019-11-15
KR102023448B1 (ko) 2019-09-20
KR20150082210A (ko) 2015-07-15
AU2017258961A1 (en) 2017-11-30
EA201590322A1 (ru) 2015-08-31
BR112015005486A2 (pt) 2017-08-08
UA117107C2 (uk) 2018-06-25
PH12015500560A1 (en) 2015-05-11

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