CL2016000668A1 - Célula solar que comprende: sustrato; región semiconductora dispuesta en o sobre el sustrato; y contacto conductor dispuesto en la región semiconductora que incluye partículas metálicas mecánicamente deformadas; y método para fabricar una célula solar - Google Patents

Célula solar que comprende: sustrato; región semiconductora dispuesta en o sobre el sustrato; y contacto conductor dispuesto en la región semiconductora que incluye partículas metálicas mecánicamente deformadas; y método para fabricar una célula solar

Info

Publication number
CL2016000668A1
CL2016000668A1 CL2016000668A CL2016000668A CL2016000668A1 CL 2016000668 A1 CL2016000668 A1 CL 2016000668A1 CL 2016000668 A CL2016000668 A CL 2016000668A CL 2016000668 A CL2016000668 A CL 2016000668A CL 2016000668 A1 CL2016000668 A1 CL 2016000668A1
Authority
CL
Chile
Prior art keywords
substrate
solar cell
semiconductor region
conductive contact
disposed
Prior art date
Application number
CL2016000668A
Other languages
English (en)
Inventor
Richard Hamilton Sewell
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of CL2016000668A1 publication Critical patent/CL2016000668A1/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Conductive Materials (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

Reiv.1 Una célula solar caracterizada porque comprende: - Un sustrato; - Una región semiconductora dispuesta en o sobre el sustrato; y - Un contacto conductor dispuesto en la región semiconductora, en donde el contacto conductor incluye partículas metálicas mecánicamente deformadas. Reiv.7 Un método para fabricar una célula solar caracterizado porque comprende: - Depositar partículas metálicas; - Deformar mecánicamente las partículas metálicas; - Formar un contacto conductor que incluye las partículas metálicas mecánicamente deformadas para la célula solar. Reiv.20 Una célula solar caracterizada porque comprende: - Un sustrato; - Una región semiconductora dispuesta en o sobre el sustrato; y - Un contacto conductor dispuesto en la región semiconductora, en donde el contacto conductor incluye las partículas conductoras mecánicamente deformadas.
CL2016000668A 2013-09-27 2016-03-22 Célula solar que comprende: sustrato; región semiconductora dispuesta en o sobre el sustrato; y contacto conductor dispuesto en la región semiconductora que incluye partículas metálicas mecánicamente deformadas; y método para fabricar una célula solar CL2016000668A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/039,837 US9536632B2 (en) 2013-09-27 2013-09-27 Mechanically deformed metal particles

Publications (1)

Publication Number Publication Date
CL2016000668A1 true CL2016000668A1 (es) 2016-10-14

Family

ID=52738907

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2016000668A CL2016000668A1 (es) 2013-09-27 2016-03-22 Célula solar que comprende: sustrato; región semiconductora dispuesta en o sobre el sustrato; y contacto conductor dispuesto en la región semiconductora que incluye partículas metálicas mecánicamente deformadas; y método para fabricar una célula solar

Country Status (14)

Country Link
US (1) US9536632B2 (es)
EP (1) EP3050121B1 (es)
JP (1) JP6510537B2 (es)
KR (1) KR102306614B1 (es)
CN (1) CN105493294B (es)
AU (1) AU2014326714B2 (es)
BR (1) BR112016006669B1 (es)
CL (1) CL2016000668A1 (es)
MX (1) MX358427B (es)
MY (1) MY176040A (es)
SA (1) SA516370819B1 (es)
SG (1) SG11201601555VA (es)
TW (1) TWI660516B (es)
WO (1) WO2015048192A1 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101620431B1 (ko) * 2014-01-29 2016-05-12 엘지전자 주식회사 태양 전지 및 이의 제조 방법
EP3381047A4 (en) * 2015-11-24 2019-07-03 Hitachi Chemical Co., Ltd. BURNED MULTILAYER STACKS IN INTEGRATED CIRCUITS AND SOLAR CELLS
US9741878B2 (en) 2015-11-24 2017-08-22 PLANT PV, Inc. Solar cells and modules with fired multilayer stacks
US9871150B1 (en) * 2016-07-01 2018-01-16 Sunpower Corporation Protective region for metallization of solar cells
CN110120434B (zh) * 2019-06-18 2024-03-26 合肥晶澳太阳能科技有限公司 电池片及其制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE514600C2 (sv) * 1999-05-25 2001-03-19 Forskarpatent I Uppsala Ab Metod för tillverkning av nanostrukturerade tunnfilmselektroder
DE10020412A1 (de) 2000-04-26 2001-11-08 Univ Konstanz Verfahren und Vorrichtung zum Anbringen einer Metallfolie an einen Halbleiterwafer, Halbleitervorrichtung und Verwendung
JP4244053B2 (ja) * 2006-06-16 2009-03-25 エプソントヨコム株式会社 圧電デバイスを備えた電子モジュール
EP2058868A4 (en) * 2006-08-29 2010-01-27 Hitachi Chemical Co Ltd CONDUCTIVE FILM AND SOLAR CELL MODULE
JP2008085227A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 太陽電池モジュール
JP5449849B2 (ja) * 2009-04-30 2014-03-19 シャープ株式会社 太陽電池およびその製造方法
CN102947941A (zh) * 2010-04-01 2013-02-27 索蒙特有限责任公司 太阳能电池及其制造方法
JP2012009546A (ja) * 2010-06-23 2012-01-12 Hitachi Ltd 薄膜製造方法、薄膜付基板および薄膜製造装置
JP2012018941A (ja) * 2010-07-06 2012-01-26 Sharp Corp 裏面電極型太陽電池セル、裏面電極型太陽電池モジュールおよび裏面電極型太陽電池セルの製造方法。
KR20120010920A (ko) 2010-07-27 2012-02-06 엘지디스플레이 주식회사 박막 태양전지 및 그 제조방법
CN102376379B (zh) * 2010-08-13 2016-04-20 三星电子株式会社 导电糊料及包含用其形成的电极的电子器件和太阳能电池
US20120037216A1 (en) * 2010-08-13 2012-02-16 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
KR101110826B1 (ko) * 2010-08-17 2012-02-24 엘지전자 주식회사 태양전지 패널
KR101741682B1 (ko) * 2010-08-24 2017-05-31 삼성전자주식회사 도전성 페이스트와 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지
WO2012054245A1 (en) 2010-10-19 2012-04-26 Air Products And Chemicals, Inc. A conductive composition and method for making conductive features on thin film pv cells
US20120142140A1 (en) * 2010-12-02 2012-06-07 Applied Nanotech Holdings, Inc. Nanoparticle inks for solar cells
KR101197575B1 (ko) 2011-02-11 2012-11-06 한밭대학교 산학협력단 태양전지 및 그 제조 방법
US20130105806A1 (en) 2011-11-01 2013-05-02 Guojun Liu Structures incorporating silicon nanoparticle inks, densified silicon materials from nanoparticle silicon deposits and corresponding methods
JP2013164990A (ja) * 2012-02-10 2013-08-22 Taiyo Holdings Co Ltd 電極、電極の製造方法およびそれを用いた電子デバイス
JP5124691B1 (ja) * 2012-03-21 2013-01-23 有限会社 ナプラ 導電性微粉末、導電性ペースト及び電子部品

Also Published As

Publication number Publication date
AU2014326714A1 (en) 2016-01-07
CN105493294B (zh) 2018-11-20
BR112016006669A2 (pt) 2017-09-12
US20150090326A1 (en) 2015-04-02
EP3050121A4 (en) 2016-10-19
TW201523897A (zh) 2015-06-16
JP6510537B2 (ja) 2019-05-08
MY176040A (en) 2020-07-22
MX2016003284A (es) 2016-10-04
KR102306614B1 (ko) 2021-09-29
AU2014326714B2 (en) 2018-10-04
EP3050121B1 (en) 2022-02-23
WO2015048192A1 (en) 2015-04-02
MX358427B (es) 2018-08-20
BR112016006669B1 (pt) 2022-04-05
TWI660516B (zh) 2019-05-21
SG11201601555VA (en) 2016-04-28
SA516370819B1 (ar) 2019-07-10
CN105493294A (zh) 2016-04-13
EP3050121A1 (en) 2016-08-03
JP2016532318A (ja) 2016-10-13
KR20160062068A (ko) 2016-06-01
US9536632B2 (en) 2017-01-03

Similar Documents

Publication Publication Date Title
CL2016000668A1 (es) Célula solar que comprende: sustrato; región semiconductora dispuesta en o sobre el sustrato; y contacto conductor dispuesto en la región semiconductora que incluye partículas metálicas mecánicamente deformadas; y método para fabricar una célula solar
PH12016501675B1 (en) Foil-based metallization of solar cells
MX2016012878A (es) Uniones para la metalizacion de celdas solares.
IN2014DE00384A (es)
BR112015021645A2 (pt) artigo metálico independente para semicondutores
AR086303A1 (es) Parabrisas con un elemento de conexion electrica
WO2015028886A3 (en) Nano-gap electrode and methods for manufacturing same
EP2779246A3 (en) Method of forming a high electron mobility semiconductor device and structure therefor
BR112014013918A2 (pt) método para formar um módulo fotovoltaico, método para formar células fotovoltaicas e célula fotovoltaica
BR112015021591A2 (pt) artigo metálico independente para semicondutores
EP4235762A3 (en) Semiconductor package and method for fabricating base for semiconductor package
GB2530675A (en) Integrated thermoelectric cooling
GB2550731A (en) Composite substrate with alternating pattern of diamond and metal or metal alloy
MY176293A (en) Back contact type solar battery cell
IN2014DN09305A (es)
EP2562814A3 (en) Light emitting device and light emitting device package
EP2763195A3 (en) Light emitting device
FI20125932A7 (fi) Menetelmä LED valaisinlaitteiden valmistamiseksi ja LED valaisinlaitteet
GB201321244D0 (en) Manufacturing conductive thin films comprising graphene and metal nanowires
MX2015007055A (es) Capa de siembra para contacto conductor de celda solar.
GB201214295D0 (en) Thermoelectric module and method for producing a thermoelectric module
EP2763193A3 (en) Light emitting device
MX387978B (es) Colector de corriente de silicio para batería de plomo-ácido.
EP2874159A3 (en) Base metal combination electrode of electronic ceramic component and manufacturing method thereof
MX373008B (es) Cable de alimentacion con una capa de aislamiento grueso y un metodo para su fabricacion.