CL2016001521A1 - Diodo de derivación incorporado - Google Patents

Diodo de derivación incorporado

Info

Publication number
CL2016001521A1
CL2016001521A1 CL2016001521A CL2016001521A CL2016001521A1 CL 2016001521 A1 CL2016001521 A1 CL 2016001521A1 CL 2016001521 A CL2016001521 A CL 2016001521A CL 2016001521 A CL2016001521 A CL 2016001521A CL 2016001521 A1 CL2016001521 A1 CL 2016001521A1
Authority
CL
Chile
Prior art keywords
bypass diode
diode built
region
diode
type
Prior art date
Application number
CL2016001521A
Other languages
English (en)
Inventor
David D Smith
Seung Bum Rim
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of CL2016001521A1 publication Critical patent/CL2016001521A1/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/70—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/70—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes
    • H10F19/75—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

UN DIODO DE DERIVACION PUEDE INCLUIR UNA PRIMERA REGION CONDUCTORA DE UN PRIMER TIPO DE CONDUCTIVIDAD DISPUESTA ENCIMA DE UN SUSTRATO DE UNA CELDA SOLAR Y UNA SEGUNDA REGION CONDUCTORA DE UN SEGUNDO TIPO DE CONDUCTIVIDAD DISPUESTA ENCIMA DE LA PRIMERA REGION CONDUCTORA, EL DIODO DE DERIVACION PUEDE INCLUIR UNA REGION DIELECTRICA FINA DISPUESTA DIRECTAMENTE ENTRE LAS PRIMERA Y SEGUNDO REGIONES CONDUCTORAS
CL2016001521A 2013-12-20 2016-06-16 Diodo de derivación incorporado CL2016001521A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/136,719 US20150179847A1 (en) 2013-12-20 2013-12-20 Built-in bypass diode

Publications (1)

Publication Number Publication Date
CL2016001521A1 true CL2016001521A1 (es) 2016-12-09

Family

ID=53401015

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2016001521A CL2016001521A1 (es) 2013-12-20 2016-06-16 Diodo de derivación incorporado

Country Status (15)

Country Link
US (2) US20150179847A1 (es)
EP (1) EP3084839B1 (es)
JP (1) JP6563908B2 (es)
KR (1) KR102282202B1 (es)
CN (1) CN105830229B (es)
AU (2) AU2014366257B2 (es)
BR (1) BR112016011872B1 (es)
CL (1) CL2016001521A1 (es)
MX (1) MX2016007331A (es)
MY (1) MY182401A (es)
PH (1) PH12016501140A1 (es)
SA (1) SA516371366B1 (es)
SG (1) SG11201605042WA (es)
TW (1) TWI652835B (es)
WO (1) WO2015094988A1 (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10217880B2 (en) 2016-03-30 2019-02-26 Sunpower Corporation Voltage breakdown device for solar cells
KR101868566B1 (ko) * 2016-11-04 2018-06-19 엘지전자 주식회사 태양 전지
CN115566088B (zh) * 2022-08-22 2025-08-12 泰州隆基乐叶光伏科技有限公司 一种背接触电池及其制造方法、光伏组件

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4759803A (en) * 1987-08-07 1988-07-26 Applied Solar Energy Corporation Monolithic solar cell and bypass diode system
US6635507B1 (en) * 1999-07-14 2003-10-21 Hughes Electronics Corporation Monolithic bypass-diode and solar-cell string assembly
JP3888860B2 (ja) * 2000-05-24 2007-03-07 シャープ株式会社 太陽電池セルの保護方法
US6690041B2 (en) * 2002-05-14 2004-02-10 Global Solar Energy, Inc. Monolithically integrated diodes in thin-film photovoltaic devices
JP2003347573A (ja) * 2002-05-28 2003-12-05 Matsushita Electric Ind Co Ltd 太陽電池用バイパスダイオード
US9029685B2 (en) * 2005-11-18 2015-05-12 The Boeing Company Monolithic bypass diode and photovoltaic cell with bypass diode formed in back of substrate
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US20080173347A1 (en) * 2007-01-23 2008-07-24 General Electric Company Method And Apparatus For A Semiconductor Structure
US8071872B2 (en) * 2007-06-15 2011-12-06 Translucent Inc. Thin film semi-conductor-on-glass solar cell devices
DE102008030880A1 (de) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Rückkontaktsolarzelle mit großflächigen Rückseiten-Emitterbereichen und Herstellungsverfahren hierfür
US7851698B2 (en) 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
WO2010057216A2 (en) * 2008-11-17 2010-05-20 Applied Materials, Inc. Integrated bypass diode assemblies for back contact solar cells and modules
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
WO2011149021A1 (ja) * 2010-05-28 2011-12-01 株式会社エバテック 光起電力素子の製造方法及び光起電力素子
KR20120028624A (ko) * 2010-09-15 2012-03-23 삼성전자주식회사 태양 전지 모듈 및 그 제조 방법
US8604330B1 (en) * 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them
US8134217B2 (en) * 2010-12-14 2012-03-13 Sunpower Corporation Bypass diode for a solar cell
US9716196B2 (en) 2011-02-09 2017-07-25 Alta Devices, Inc. Self-bypass diode function for gallium arsenide photovoltaic devices
WO2012132615A1 (ja) 2011-03-25 2012-10-04 三洋電機株式会社 光電変換装置及びその製造方法
US9490375B2 (en) * 2011-04-04 2016-11-08 Mitsubishi Electric Corporation Solar cell and method for manufacturing the same, and solar cell module
US9373731B2 (en) * 2011-06-30 2016-06-21 Newsouth Innovations Pty Limited Dielectric structures in solar cells
US20130213469A1 (en) * 2011-08-05 2013-08-22 Solexel, Inc. High efficiency solar cell structures and manufacturing methods
JP5868661B2 (ja) * 2011-11-09 2016-02-24 シャープ株式会社 バイパスダイオードおよびその製造方法
US8597970B2 (en) * 2011-12-21 2013-12-03 Sunpower Corporation Hybrid polysilicon heterojunction back contact cell
JP6063577B2 (ja) * 2012-10-16 2017-01-18 ソレクセル、インコーポレイテッド 光起電力太陽電池及びモジュールにおけるモノリシック集積バイパススイッチのためのシステム及び方法
US20150048497A1 (en) * 2013-08-16 2015-02-19 Qualcomm Incorporated Interposer with electrostatic discharge protection

Also Published As

Publication number Publication date
SG11201605042WA (en) 2016-07-28
CN105830229B (zh) 2018-08-03
JP2016541105A (ja) 2016-12-28
US11967655B2 (en) 2024-04-23
PH12016501140A1 (en) 2016-08-15
TWI652835B (zh) 2019-03-01
MY182401A (en) 2021-01-25
WO2015094988A1 (en) 2015-06-25
US20200335642A1 (en) 2020-10-22
KR20160100955A (ko) 2016-08-24
AU2014366257B2 (en) 2019-10-03
BR112016011872B1 (pt) 2022-02-08
TW201530796A (zh) 2015-08-01
KR102282202B1 (ko) 2021-07-26
JP6563908B2 (ja) 2019-08-21
MX2016007331A (es) 2016-08-19
CN105830229A (zh) 2016-08-03
AU2014366257A1 (en) 2016-04-28
AU2020200217A1 (en) 2020-02-06
US20150179847A1 (en) 2015-06-25
EP3084839A4 (en) 2016-12-21
EP3084839B1 (en) 2019-04-03
SA516371366B1 (ar) 2021-04-04
BR112016011872A2 (es) 2017-08-08
EP3084839A1 (en) 2016-10-26

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